NE76000 Search Results

Contextual Info: LOW NOISE L TO Ku BAND GaAs MESFET NE76000 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vds = 3 V, Ids = 10 mA FEATURES LOW NOISE FIGURE NF = 1.6 dB TYP a tf = 12 GHz HIGH ASSOCIATED GAIN 0Q ;o Ga = 9 dB TYP at f = 12 GHz < O c La = 0.3 |xm, Wa = 280 um ro

transistor nec D78

Abstract: D78 NEC NEC D73 d3055 J100 J150 NE76000 transistor d176
Contextual Info: DATA SHEET GaAs MES FET NE76000 C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • CHIP DIMENSIONS Unit: Pm Low noise figure NF = 1.6 dB TYP. at f = 12 GHz High associated gain 450 57 Ga = 9.0 dB TYP. at f = 12 GHz DRAIN DRAIN VDS 5.0 V

Contextual Info: LOW NOISE L TO Ku BAND GaAs MESFET NE76000 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vds = 3 V, Ids = 10 mA FEATURES LOW NO ISE FIG URE NF = 1 .6 dB TYP at f = 12 GHz HIG H A S S O C IA TED GAIN Ga = 9 dB TYP at f = 12 GHz m ;o < D ç m Lg = 0.3 |im , W g = 280 |im

Contextual Info: DATA SHEET GaAs MES FET NE76000 C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • CHIP DIMENSIONS Unit: //m Low noise figure NF = 1.6 dB TYP. at f = 12 GHz • High associated gain Ga = 9.0 dB TYP. at f = 12 GHz • Gate length: Lg = 0 .3 //m

Contextual Info: DATA SHEET G a As MES FET NE76000 C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • CHIP DIMENSIONS Unit: /u rn Low noise figure NF = 1.6 dB TYP. at f = 12 GHz High associated gain 450 - Ga = 9.0 dB TYP. at f : 12 GHz Gate length: Lg

NE76084

Abstract: NE760 NE76000 NE76083A S221 y427
Contextual Info: N E C / CALIFORNIA 1SE D NEC □4S7414 G D O l t m LOW NOISE Ku-K BAND G aAs MESFET 7 - r - 3 h 4 S NE760 SERIES FEATURES DESCRIPTION AND APPLICATIONS • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz The NE76000 provides a low noise figure and high associated

Contextual Info: LOW NOISE L TO Ku BAND GaAs MESFET FEATURES NE76000 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vos = 3 V, I d s = 10 m A LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz HIGH ASSOCIATED GAIN tn T> G a = 9 dB TYP at f = 12 GHz L g = 0.3 |im , W g = 2 80 Jim

NE76000

Abstract: 3079 alpha wire G1225
Contextual Info: LOW NOISE L TO Ku BAND GaAs MESFET NE76000 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES V ds = 3 V, Id s = 1 0 m A LOW NOISE FIGURE NF = 1.6 dB TYP a t f = 12GHz 24 21 HIGH ASSOCIATED GAIN Ga = 9 dB TYP at f = 12 GHz 18 < Lg = 0.3 im, W g = 280 jam

NE67383

Contextual Info: General Purpose GaAs FETs Typical Specifications @ T a = 25°C Pw t m a '4 m . I NEW^ Güw> |N EW *> I NEW > I N Ew V I NEW ^ »»a Vus Id s M ÊM mA (mA) p p fc M NE33200 NE67300 NE71300 NE76000 NE76100 0.3 0.3 0.3 0.3 1.0 280 280 280 280 400 0.1 0.1 0.1

32E-12

Contextual Info: NONLINEAR MODEL Q1 SCHEMATIC RD LG LD 0.06 76000 NE76000 DRAIN 2 RG R_COMP 480 GATE 0.14 1.5 CRF_X 100 RS 4.6 LS 0.02 SOURCE FET NONLINEAR MODEL PARAMETERS 1 UNITS Parameters Q1 Parameters Q1 Parameter VTO -0.73 RG capacitance picofarads VTOSC RD inductance

SVI 3104 c

Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or

2SK2396

Abstract: PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711
Contextual Info: CD-ROM版RF & マイクロ波デバイス CD-ROM X13769XJ2V0CD00 11−1 RF & マイクロ波デバイス IC • 可変利得増幅器（µ PCx×××，µPG××××） 品 名 µPC8119T アプリケーション 移動通信 電源電圧 電流 周波数

uPD16305

Abstract: uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943
Contextual Info: Search by Product Name Find tool 1. Click the icon on the tool bar. 2. The find dialog box will be displayed. 3. Input the full product name or part of the product name to Find be located and click . 4. A characteristic table will be displayed if the retrieved product name is clicked.

nf025

Abstract: NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408
Contextual Info: CD-ROM RF and Microwave Devices CD-ROM X13769XJ2V0CD00 11-1 RF and Microwave Devices IC • AGC AMP. µ PCx×××, µPG×××× Part Number Applications Supply Voltage (V) Supply Current (mA) Operating Frequency (MHz) µPC8119T Mobile Comm. 3 11 100–1920

LORB

Abstract: NE2720 NE334S01
Contextual Info: Small Signal GaAs FETs Selection Guide. 1-2 Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs Typical S pecificatio ns @ Ta = 25°C PM Number Sat« Gate Length W idth Mm ftim ) •i.t RecomrnaruM Frequency Rang* . pVMW ' gB S " NE23300 0.3 280 0.1 to 18

NE76000

Abstract: NE76000L AF127
Contextual Info: LOW NOISE L TO Ku BAND GaAs MESFET NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA FEATURES • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz • ION IMPLANTATION 24 21 3.5 Ga 3 18 2.5 15 2 12 Associated Gain, GA dB • LG = 0.3 µm, WG = 280 µm

ne71084

Abstract: NE76084 NE71000 NE32684A NE67383 NE72000 NE32584 ne72089
Contextual Info: Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs 1.0 to 40 12 2.0 10 0.6 11.0 2.0 20 11.0 00 Chip C or B 1-5 200 1.OtO 40 12 2.0 10 0.6 11.0 2-0 20 11.0 oo Chip D 1-22 280 0.1 to 18 12 2.0 10 0.75 10.5 2.0 20 12.0 00 Chip 0.3 2« 0.1 to 18 12 3.0

ne71084

Abstract: GaAs MESFET NE25139 NE4200 NE32684A NE71000 71083 ne72089 NE72000 MESFET Application
Contextual Info: Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs Typical Spécifications @ Ta * ZS'C ftffiW M M R M Bat* Part Humber Test Frequency Gita LeagM Width f Range | Frequency C6HZ Min) Pows Bias NF/Gi Bias Available Vos Ids HFow 6* Vds Ids PliB Package

uPD72002-11

Abstract: uPD16305 uPC1237 upc1701 uPD65656 2SD1392 2sb1099 UPD65625 uPD78F0841 uPG508
Contextual Info: 品名別検索 検索ツール 1. ツールバーの アイコンをクリックしてください。 2. ［検索］ダイアログ・ボックスが表示されます。 3. 検索したい品名または品名の一部を入力して， 検索 F を クリックしてください。

UAA 1006

Abstract: manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71
Contextual Info: NEC Offices NEC Electronics Europe GmbH Oberrather Str. 4 D-40472 Düsseldorf, Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 NEC Electronics Italiana S.R.L. Via Fabio Filzi, 25A I-20124 Milano Tel. (02) 66 75 41 Fax (02) 66 75 42 99 NEC Electronics (Germany) GmbH

NE334S01

Abstract: E7138 nec microwave NE76084 NE67383
Contextual Info: NEC is a global force in the dozens of satellites around the world. j and engineering services are all geared to computer, communications and home CEL’s Space/Hi Rel Management Group | helping you get your designs off paper and electronics markets. The company’s products

J100

Abstract: J150 NE76000
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

free transistor equivalent book 2sc

Abstract: uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 RF and Microwave Devices 7 Optical Device 8 Index 9 April 1999 The export of these products from Japan is regulated by the Japanese government. The export of some or all of