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    NE76100 Search Results

    NE76100 Datasheets (4)

    NEC
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    NE76100
    NEC MES type field effect transistor Original PDF 69.6KB 10
    NE76100
    NEC General purpose GaAs MESFET. IDSS 30 to 100 mA. Original PDF 51.2KB 8
    NE76100M
    NEC General purpose GaAs MESFET. IDSS 60 to 100 mA. Original PDF 51.2KB 8
    NE76100N
    NEC General purpose GaAs MESFET. IDSS 30 to 60 mA. Original PDF 51.2KB 8
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    NE76100 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    equivalent 4435

    Contextual Info: GENERAL PURPOSE GaAs MESFET NE76100 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vos = 3 V, los = 10 m A FEATURES LOW NOISE FIGURE: NF = 0.8 dB typical at f = 4 G Hz CO TJ HIGH ASSOCIATED GAIN: G a = 12.0 dB typical at f = 4 GHz Lq = 1.0 j.m , Wg = 400 (im


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    ne76100e76100ls22lne76100n+2ne76100pequivalent 4435 PDF

    Contextual Info: GENERAL PURPOSE GaAs MESFET FEATURES NE76100 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vds = 3 V, Ids = 10 mA LOW NOISE FIGURE: N F = 0.8 d B ty p ic a l at f = 4 G H z m "O HIGH ASSO CIATED GAIN: G a = 12.0 d B ty p ic a l at f = 4 G H z o z p T3 < Li_


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    ne76100is12s21i140nmne76100n+1ne76100m PDF

    NE67383

    Contextual Info: General Purpose GaAs FETs Typical Specifications @ T a = 25°C Pw t m a '4 m . I NEW^ Güw> |N EW *> I NEW > I N Ew V I NEW ^ »»a Vus Id s M ÊM mA (mA) p p fc M NE33200 NE67300 NE71300 NE76000 NE76100 0.3 0.3 0.3 0.3 1.0 280 280 280 280 400 0.1 0.1 0.1


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    NE76100

    Abstract: NE76100M NE76100N
    Contextual Info: GENERAL PURPOSE GaAs MESFET FEATURES • LG = 1.0 µm, WG = 400 µm DESCRIPTION NE76100 is a high performance gallium arsenide metal semiconductor field effect transistor chip. Its low noise figure makes this device appropriate for use in the second or third stages of


    Original
    ne76100ne76100nne76100m24-hour PDF

    4435 ag

    Abstract: 5q 1265 rf
    Contextual Info: GENERAL PURPOSE GaAs MESFET FEATURES NOISE FIGURE & ASSOCIATED GAINvs.FREQUENCY - • NE76100 LOW NOISE FIGURE: Vds = 3 V, Id s = 10 mA NF = 0.8 dB typical at f = 4 GHz


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    ne76100e76100ne76100nne76100m+24435 ag5q 1265 rf PDF

    NE76100

    Abstract: NE76100M NE76100N
    Contextual Info: GENERAL PURPOSE GaAs MESFET FEATURES DESCRIPTION Optimum Noise Figure, NFOPT dB • LG = 1.0 µm, WG = 400 µm 4 24 3.5 21 3 18 Ga 2.5 15 2 12 9 1.5 6 1 NF 0.5 3 NE76100 is a high performance gallium arsenide metal semiconductor field effect transistor chip. Its low noise figure


    Original
    ne76100ne76100nne76100m24-hour PDF

    SVI 3104 c

    Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
    Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or


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    an83301-1ne24615an83302an83303-1+16ne71083ne70083an83901an8530111/86-lnan86104svi 3104 cupc1678gne333stb 1277 transistor equivalenttransistor bf 175ne85635 packaging schematicne72000 vcsvi 3104ne9000ne720 PDF

    Contextual Info: GENERAL PURPOSE GaAs MESFET FEATURES • LOW NOISE FIGURE: NF - 0.8 dB typical at f = 4 GHz • HIGH ASSOCIATED GAIN: Ga = 12.0 dB typical at f = 4 GHz • Lg = 1.0 |im, W g = 400 Jim NE7610o NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V d s = 3 V, Id s = 10 mA


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    ne7610one76100ne761qqnne76100m+298b-350024-hour PDF

    LORB

    Abstract: NE2720 NE334S01
    Contextual Info: Small Signal GaAs FETs Selection Guide. 1-2 Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs Typical S pecificatio ns @ Ta = 25°C PM Number Sat« Gate Length W idth Mm ftim ) •i.t RecomrnaruM Frequency Rang* . pVMW ' gB S " NE23300 0.3 280 0.1 to 18


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    ne23300ne24200ne27200ne67400+9ne32400ne32500ne32900ne33200ne325s01ne329s01lorbne2720ne334s01 PDF

    ne71084

    Abstract: NE76084 NE71000 NE32684A NE67383 NE72000 NE32584 ne72089
    Contextual Info: Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs 1.0 to 40 12 2.0 10 0.6 11.0 2.0 20 11.0 00 Chip C or B 1-5 200 1.OtO 40 12 2.0 10 0.6 11.0 2-0 20 11.0 oo Chip D 1-22 280 0.1 to 18 12 2.0 10 0.75 10.5 2.0 20 12.0 00 Chip 0.3 2« 0.1 to 18 12 3.0


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    ne71084

    Abstract: GaAs MESFET NE25139 NE4200 NE32684A NE71000 71083 ne72089 NE72000 MESFET Application
    Contextual Info: Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs Typical Spécifications @ Ta * ZS'C ftffiW M M R M Bat* Part Humber Test Frequency Gita LeagM Width f Range | Frequency C6HZ Min) Pows Bias NF/Gi Bias Available Vos Ids HFow 6* Vds Ids PliB Package


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    UAA 1006

    Abstract: manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71
    Contextual Info: NEC Offices NEC Electronics Europe GmbH Oberrather Str. 4 D-40472 Düsseldorf, Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 NEC Electronics Italiana S.R.L. Via Fabio Filzi, 25A I-20124 Milano Tel. (02) 66 75 41 Fax (02) 66 75 42 99 NEC Electronics (Germany) GmbH


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    d-40472i-20124i-00139d-30177+15gb-mk14d-81925s-18322f-78142e-28007uaa 1006manual* cygnus sl 5000transistor marking t79 ghzpc1658gnec ga fet marking code t79gaas fet t79pc1658mc-77122sc5431nec u71 PDF

    NE334S01

    Abstract: E7138 nec microwave NE76084 NE67383
    Contextual Info: NEC is a global force in the dozens of satellites around the world. j and engineering services are all geared to computer, communications and home CEL’s Space/Hi Rel Management Group | helping you get your designs off paper and electronics markets. The company’s products


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