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    J150 Search Results

    J150 Datasheets (128)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    J150
    Lexor Electronic Laboratories Delay Line TAPPED 20TAP 1IN 20NS ABS 400NS MAX Original PDF 13.64KB 2
    J-150-150
    Anderson Power Products GROMMET, JACKETED WIRE, .15-.18" Original PDF 92.63KB 1
    J-150-180
    Anderson Power Products GROMMET, JACKETED WIRE, .15-.18" Original PDF 92.63KB 1
    J1501F21
    Pulse Engineering Isolation Transformer Original PDF 105.62KB 2
    J-150-320
    Anderson Power Products GROMMET, JACKETED WIRE, .15-.18" Original PDF 92.63KB 1
    J-150-350
    Anderson Power Products GROMMET, JACKETED WIRE, .15-.18" Original PDF 92.63KB 1
    J-150-380
    Anderson Power Products GROMMET, JACKETED WIRE, .15-.18" Original PDF 92.63KB 1
    J-150-410
    Anderson Power Products GROMMET, JACKETED WIRE, .15-.18" Original PDF 92.63KB 1
    badge SMCJ150A
    SUNMATE electronic Co., LTD Surface mount transient voltage suppressor diode in SMC/DO-214AB package with 1500W peak pulse power, 5.0V to 440V breakdown range, and fast response for uni-directional and bi-directional protection.Surface mount transient voltage suppressor diode in SMC/DO-214AB package, 1500W peak pulse power, 5.0V to 440V breakdown voltage range, unidirectional and bidirectional versions available, operating junction temperature from -55 to +150C.Surface mount transient voltage suppressor diode in SMC/DO-214AB package, 1500W peak pulse power, 5.0V to 440V breakdown voltage range, available in uni- and bi-directional versions with glass passivated die.Surface mount transient voltage suppressor diode in SMC/DO-214AB package, 1500W peak pulse power, 5.0V to 440V breakdown voltage range, uni- and bi-directional versions available, glass passivated die construction.Surface mount transient voltage suppressor diode in SMC/DO-214AB package, 1500W peak pulse power, 5.0 to 440V breakdown voltage range, uni- and bi-directional versions available, operating junction temperature from -55 to +150C. Original PDF
    badge SMDJ150CA
    AK Semiconductor 3000W surface mount transient voltage suppressor in DO-214AB/SMC package, with stand-off voltages from 5.0V to 170V, glass passivated junction, low inductance, and matte tin lead-free plating for optimized board space and robust surge protection. Original PDF
    badge KBJ1508
    Microdiode Semiconductor GLASS PASSIVATED BRIDGE RECTIFIERS, Reverse Voltage 50-1000V, Forward Current 15.0A. Original PDF
    badge SMBJ150A
    Microdiode Semiconductor SMD, 600W peak, 5.0-440V, fast response, glass passivated, low inductance, 260°C/10s, UL 94V-0. Original PDF
    badge GBJ1506
    Microdiode Semiconductor Silicon bridge rectifiers, reverse voltage 50 to 1000 volts, forward current 15.0 amperes. Original PDF
    badge SMBJ150A
    Leiditech 600W peak pulse power Transient Voltage Suppressor (TVS) diode in SMB package, designed for surface mount applications with low inductance, fast response time less than 1.0ps, and glass passivated junction for reliable transient protection.600W peak pulse power SMBJ Series transient voltage suppressor with low profile surface mount package, fast response time, excellent clamping capability, and 10/1000 μs waveform rating for use in consumer, automotive, and industrial applications. Original PDF
    badge SMBFJ150CA
    SUNMATE electronic Co., LTD Surface mount transient voltage suppressor diode in SMBF package, 600W peak pulse power, 5.0V to 440V breakdown voltage range, glass passivated die, available in uni- and bi-directional versions, with fast response and excellent clamping capability.Surface mount transient voltage suppressor diode in SMBF package with 600W peak pulse power, 5.0 to 440V breakdown voltage range, unidirectional and bidirectional versions, glass passivated die, and operating temperature from -55 to +150°C.Surface mount transient voltage suppressor diode with 600W peak pulse power, 5.0 to 440V breakdown voltage range, unidirectional and bidirectional versions, glass passivated die, and plastic UL 94V-0 rated package.Surface mount transient voltage suppressor diode with 600W peak pulse power, 5.0 to 440V breakdown voltage range, unidirectional and bidirectional versions, glass passivated die, and operating temperature from -55 to +150°C.Surface mount transient voltage suppressor diode with 600W peak pulse power, 5.0 to 440V breakdown voltage range, glass passivated die, and fast response for surge protection in unidirectional and bidirectional configurations.Surface mount transient voltage suppressor diode with 600W peak pulse power, 5.0 to 440V breakdown voltage range, unidirectional and bidirectional versions, glass passivated die, and operating temperature from -55 to +150°C.Surface mount transient voltage suppressor diode in SMBF package with 600W peak pulse power, 5.0 to 440V breakdown voltage range, unidirectional and bidirectional versions available, glass passivated die, fast response, and UL 94V-0 rated plastic housing. Original PDF
    badge SMBJ150CA
    Leiditech 600W peak pulse power Transient Voltage Suppressor (TVS) diode in SMB package, designed for surface mount applications with low inductance, fast response time less than 1.0ps, and glass passivated junction for reliable transient protection.600W peak pulse power SMBJ Series transient voltage suppressor with low profile surface mount package, fast response time, excellent clamping capability, and 10/1000 μs waveform rating for use in consumer, automotive, and industrial applications. Original PDF
    badge SMA5J150A
    SUNMATE electronic Co., LTD Surface mount transient voltage suppressor diode in SMA/DO-214AC package with 500W peak pulse power, 5.0 to 440V working voltage range, fast response, and unidirectional or bidirectional polarity options.Surface mount transient voltage suppressor diode in SMA/DO-214AC package, 500W peak pulse power, 5.0 to 440V breakdown voltage range, unidirectional and bidirectional versions available, operating temperature -55 to +150°C.Surface mount transient voltage suppressor diode in SMA/DO-214AC package, 500W peak pulse power, 5.0 to 440V breakdown voltage range, unidirectional and bidirectional versions available, operating temperature -55 to +150°C.Surface mount transient voltage suppressor diode in SMA/DO-214AC package, 500W peak pulse power, 5.0 to 440V breakdown voltage range, unidirectional and bidirectional versions available, operating temperature -55 to +150°C.Surface mount transient voltage suppressor diode in SMA/DO-214AC package with 500W peak pulse power, 5.0 to 440V breakdown voltage range, fast response, and unidirectional or bidirectional polarity options.Surface mount transient voltage suppressor diode in SMA/DO-214AC package with 500W peak pulse power, 5.0 to 440V breakdown voltage range, and fast response for circuit protection. Original PDF
    badge SMA5J150CA
    SUNMATE electronic Co., LTD Surface mount transient voltage suppressor diode in SMA/DO-214AC package with 500W peak pulse power, 5.0 to 440V working voltage range, fast response, and unidirectional or bidirectional polarity options. Original PDF
    badge SMCJ150
    Shenzhen Heketai Electronics Co Ltd Surface mount SMCJ5.0(A) TVS diode with 1500W peak pulse power, low inductance, glass passivated junction, and fast response time less than 1.0ps, designed for high-speed data line protection.Surface mount TVS diode with glass passivated junction, low inductance, 1500W peak pulse power, fast response time less than 1.0ps, available in unidirectional and bidirectional types with various breakdown voltage options.Surface mount SMCJ5.0(A) TVS diode with 1500W peak pulse power, low inductance, glass passivated junction, fast response time under 1ps, and operating temperature range from -55°C to +150°C.Surface mount SMCJ5.0(A) transient voltage suppression diode with 1500W peak pulse power, low inductance, glass passivated junction, and fast response time, designed for high-speed circuit protection in unidirectional or bidirectional configurations.Surface mount TVS diode in SMC package with 1500W peak pulse power, low inductance, glass passivated junction, and fast response time, designed for high-speed data line protection.Surface mount SMCJ5.0(A) TVS diode with 1500W peak pulse power, low inductance, glass passivated junction, and fast response time, designed for transient voltage suppression in unidirectional and bidirectional configurations.Surface mount SMCJ5.0(A) TVS diode with 1500W peak pulse power, low inductance, glass passivated junction, and unidirectional or bidirectional polarity options for transient voltage protection. Original PDF
    badge SMCJ150C
    Shenzhen Heketai Electronics Co Ltd Surface mount SMCJ5.0(A) TVS diode with 1500W peak pulse power, low inductance, glass passivated junction, and fast response time less than 1.0ps, designed for high-speed data line protection.Surface mount TVS diode with glass passivated junction, low inductance, 1500W peak pulse power, fast response time less than 1.0ps, available in unidirectional and bidirectional types with various breakdown voltage options.Surface mount SMCJ5.0(A) TVS diode with 1500W peak pulse power, low inductance, glass passivated junction, fast response time under 1ps, and operating temperature range from -55°C to +150°C.Surface mount SMCJ5.0(A) transient voltage suppression diode with 1500W peak pulse power, low inductance, glass passivated junction, and fast response time, designed for high-speed circuit protection in unidirectional or bidirectional configurations.Surface mount TVS diode in SMC package with 1500W peak pulse power, low inductance, glass passivated junction, and fast response time, designed for high-speed data line protection.Surface mount SMCJ5.0(A) TVS diode with 1500W peak pulse power, low inductance, glass passivated junction, and fast response time, designed for transient voltage suppression in unidirectional and bidirectional configurations.Surface mount SMCJ5.0(A) TVS diode with 1500W peak pulse power, low inductance, glass passivated junction, and unidirectional or bidirectional polarity options for transient voltage protection.Surface mount SMCJ5.0(A) TVS diode with 1500W peak pulse power, low inductance, glass passivated junction, and fast response time under 1ps, designed for high-speed transient voltage suppression in unidirectional and bidirectional configurations. Original PDF
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    J150 Price and Stock

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    Diodes Incorporated SMCJ150A-13-F

    TVS DIODE 150VWM 243VC SMC
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    DigiKey () SMCJ150A-13-F Cut Tape 11,231 1
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    SMCJ150A-13-F Digi-Reel 11,231 1
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    SMCJ150A-13-F Tape & Reel 9,000 3,000
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    Newark SMCJ150A-13-F Cut Tape 585 5
    • 1 $1.08
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    Avnet Silica SMCJ150A-13-F 14 Weeks 3,000
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    IBS Electronics SMCJ150A-13-F 1
    • 1 $0.15
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    Cal-Chip Electronics RM04J150CT

    RES0402 5% 15 OHM
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    DigiKey () RM04J150CT Cut Tape 9,865 1
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    RM04J150CT Digi-Reel 9,865 1
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    TE Connectivity CFR50J150R

    RES 150 OHM 5% 1/2W AXIAL
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    DigiKey () CFR50J150R Cut Tape 7,976 1
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    CFR50J150R Ammo Pack 6,000 3,000
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    Bourns Inc 3313J-1-504E

    TRIMMER 500K OHM 0.125W J LEAD
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    DigiKey () 3313J-1-504E Digi-Reel 3,649 1
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    3313J-1-504E Cut Tape 3,649 1
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    3313J-1-504E Tape & Reel 3,000 1,000
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    Newark 3313J-1-504E Cut Tape 304 1
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    Avnet Abacus 3313J-1-504E Tape & Reel 11 Weeks 1,000
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    TE Connectivity RR01J150KTB

    RES 150K OHM 5% 1W AXIAL
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    DigiKey RR01J150KTB Cut Tape 2,759 1
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    J150 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MJ15025

    Abstract: transistor MJ15025 MJ15023 MJ1502S mj15 1B32A
    Contextual Info: ^ M O S P E C SILICON POWER TRANSISTORS PNP M J150 23 M J1 5 0 2 5 The J15023 and J15025 are power base power transistors designed for high power audio,disk head positioners and other linear applications. FEA TU RES * High Safe Operating Area * High DC Current GainhFE= 15 Min @lc= 8.0 A VCE=4.0 V


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    MJ15023 MJ15025 MJ15025 MJ1502S MJ15025-^ transistor MJ15025 mj15 1B32A PDF

    Contextual Info: MOTOROLA Order this document by J15023/D SEMICONDUCTOR TECHNICAL DATA PNP J15023 M J15025* Silicon Power Transistors The J15023 and J15025 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications.


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    MJ15023/D MJ15023 MJ15025 J15025* PDF

    4221 motorola transistor

    Abstract: equivalent of transistor D 2331 MOTOROLA 1496 608 diode mj150bx120 MOTOROLA 4221
    Contextual Info: 6367254 MOTOROLA SC XSTRS/R F ÏF | t .3 t 7 2 S 4 MOTOROLA O D T ^ flO 89D 79980 r/' 7 ^ 3 3 - 3 5 “ u raer in is aaxa sneet by J150BX120/D SEMICONDUCTOR TECHNICAL DATA NPIM Silico n Pow er Tran sisto r Module M J150B X120 Energy Management Series DUAL


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    MJ150BX120/D J150B MK145BP, MJ150BX120 4221 motorola transistor equivalent of transistor D 2331 MOTOROLA 1496 608 diode mj150bx120 MOTOROLA 4221 PDF

    Contextual Info: Agilent T-13/4 5 mm , T-1 (3 mm), High Performance, Tinted, Diffused, AlInGaP, and TS AlGaAs Red LED Lamps Data Sheet HLMA-DX05 Series, HLMA-KX05 Series HLMP-D1XX Series, HLMP-J100/J150 Series Description The HLMA-D/KXXX series tinted, diffused, solid state lamps utilize


    Original
    T-13/4 HLMA-DX05 HLMA-KX05 HLMP-J100/J150 HLMP-J100-J150 5964-9287E 5989-3270EN PDF

    Contextual Info: File Number 1 2 9 3 .1 M J15022, M J15024 Silicon N-P-N Epitaxial-Base High-Power Transistors TERMINAL DESIGNATIONS c Rugged Devices, Broadly Applicable For Industrial and Commercial Use Features: • High dissipation capability ■ Maximum safe-aroa-of-operation curves


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    J15022, J15024 O-204AA MJ1S024 MJ15022 MJ15024 PDF

    dh05

    Contextual Info: W fipl HEWLETT mLftm PACKARD T-13/4 5 mm , T-l (3 mm), High Performance, Tinted, Diffused, AlInGaP, and TS AlGaAs Red LED Lamps ^ HLMA-DX05 Series HLMA-KX05 Series h l m p - d i x x se rie s HLMP-J100/J150 Series Technical Data Features Applications • High Light Output Over a


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    T-13/4 HLMA-DX05 HLMA-KX05 HLMP-J100/J150 P-D115 P-D120 P-J100-J150 dh05 PDF

    Contextual Info: AND 1A"KM 2*1P HEWLETT ACKARD LED L A MP S ‘ ID C A T-13/4 5 mm , T-l (3 mm), High Performance, Tinted, Diffused, AlInGaP, and TS AlGaAs Red LED Lamps HLMA-DX05 Series HLMA-KX05 Series HLMP-D1XX Series HLMP-J100/J150 Series Technical Data Features Applications


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    T-13/4 HLMA-DX05 HLMA-KX05 HLMP-J100/J150 HLMP-D115 HLMP-D120 P-J100-J150 PDF

    HDSM-572G

    Abstract: DL05 HLMA-DH05 HLMA-DL05 HLMA-DX05 HLMA-KH05 HLMA-KL05 HLMA-KX05 HLMP-D115 HLMP-D120
    Contextual Info: HDSM-572G T-13/4 5 mm , T-1 (3 mm), High Performance, Tinted, Diffused, AlInGaP, and TS AlGaAs Red LED Lamps Data Sheet HLMA-DX05 Series, HLMA-KX05 Series HLMP-D1XX Series, HLMP-J100/J150 Series Description Features The HLMA-D/KXXX series tinted, diffused, solid


    Original
    HDSM-572G T-13/4 HLMA-DX05 HLMA-KX05 HLMP-J100/J150 HLMP-D120 HLMP-J100-J150 5964-9287E 5989-3270EN HDSM-572G DL05 HLMA-DH05 HLMA-DL05 HLMA-KH05 HLMA-KL05 HLMP-D115 PDF

    MOTOROLA MJ15022

    Abstract: MJ15024
    Contextual Info: MOTOROLA Order this document by J15022/D SEMICONDUCTOR TECHNICAL DATA NPN J15022 M J15024* Silicon Power Transistors The J15022 and J15024 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications.


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    MJ15022/D MJ15022 MJ15024 J15024* MOTOROLA MJ15022 PDF

    355a transistor

    Abstract: MJ15015 MJ15016 MJ15015 TRANSISTOR 2N3055A MJ1501S N3055 pnp transistor wc 2N3Q55 MJ15015-MJ2955A
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Com plem entary Silicon H igh-Pow er Transistors 2 N3055A M J15015* . . . PowerBase complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power


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    2N3055 MJ2955. 2N3055A MJ2955A MJ15015 MJ15016 MJ15015, MJ15016 355a transistor MJ15015 TRANSISTOR MJ1501S N3055 pnp transistor wc 2N3Q55 MJ15015-MJ2955A PDF

    Contextual Info: Agilent HLMA-DX05, HLMA-KX05, HLMP-D1XX & HLMP-J100/J150 series T-1¾ 5 mm , T-1 (3 mm), High Performance, Tinted, Diffused, AlInGaP, and TS AlGaAs Red LED Lamps Data Sheet Features Description The HLMA-D/KXXX series tinted, diffused, solid state lamps utilize the newly


    Original
    HLMA-DX05, HLMA-KX05, HLMP-J100/J150 HLMP-J100-J150 5964-9287E 5989-1431EN PDF

    Contextual Info: Uüb Ö4USU 6 3 6 7 2 5 4 MOTOROLA SC X S T R S / R F 02 MOTOROLA LT 7 Order this data sheet by J150B3D55/D IE I t3t7aS4 DDa,(DS0 5 i " SEMICONDUCTOR TECHNICAL DATA M J150B 3D 55 NPN Silico n Pow er Transistor Module Energy M anagem ent Series These Darlington transistors are designed for industrial service under practical operat­


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    MJ150B3D55/D J150B 14A-01 MK145BP, MJ150B3D55 PDF

    S 15018 motorola

    Abstract: TRANSISTOR mj15020 MJ15015 MJ15021 TRANSISTOR mj15021 s 15018 2N3055A MJ15016 MJ15018 MJ15019
    Contextual Info: MOTOROLA Order this document by J15018/D SEMICONDUCTOR TECHNICAL DATA J15015, J15016 See 2N3055A NPN Advance Information J15018 M J15020* PNP J15019 M J15021* Complementary Silicon Power Transistors . . . designed for use as high frequency drivers in Audio Amplifiers.


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    MJ15018/D MJ15018 MJ15019 MJ15020 MJ15021 TQ-204AA O-204AA S 15018 motorola TRANSISTOR mj15020 MJ15015 TRANSISTOR mj15021 s 15018 2N3055A MJ15016 PDF

    WD115

    Abstract: DL05 D115 D120 HLMA-DX05 HLMA-KX05 J100 J150 KL-05
    Contextual Info: HLMA-DX05, HLMA-KX05, HLMP-D1XX & HLMP-J100/J150 series T-1¾ 5 mm , T-1 (3 mm), High Performance, Tinted, Diffused, AlInGaP, and TS AlGaAs Red LED Lamps Data Sheet Description Features The HLMA-D/KXXX series tinted, diffused, solid state lamps utilize the newly developed aluminum indium


    Original
    HLMA-DX05, HLMA-KX05, HLMP-J100/J150 HLMP-D120 HLMP-J100-J150 5989-1431EN WD115 DL05 D115 D120 HLMA-DX05 HLMA-KX05 J100 J150 KL-05 PDF

    J15003

    Abstract: motorola MJ15003 Mj15003 Motorola
    Contextual Info: MOTOROLA Order this document by J15003/D SEMICONDUCTOR TECHNICAL DATA NPN M J15003* PNP M J15004* Complementary Silicon Power Transistors The J15003 and J15004 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications.


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    MJ15003/D MJ15003 MJ15004 J15003* J15004* O-204AA J15003 motorola MJ15003 Mj15003 Motorola PDF

    J1503E10

    Abstract: J0234E J0123N "DDR3 SDRAM" DDR3 SDRAM DDR3 DDR3 SDRAM Document DDR3 impedance J0123 ELPIDA DDR User
    Contextual Info: ユーザーズマニュアル DDR3 SDRAM 新機能の説明 Document No. J1503E10 Ver.1.0 Date Published March 2009 (K) Japan URL: http://www.elpida.com Elpida Memory, Inc. 2004-2009 User's Manual J1503E10 (Ver.1.0) 2 本資料に記載された情報は半導体製品の動作例、応用例を示したものです。これらの情報をお客様の機器に使用される場合には、


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    J1503E10 J1503E10 J0123N J0234E J0437E CMJ0107 M01J0706 J0234E J0123N "DDR3 SDRAM" DDR3 SDRAM DDR3 DDR3 SDRAM Document DDR3 impedance J0123 ELPIDA DDR User PDF

    Contextual Info: P2 CONN TYPE F IG NO BJ26 1A UBJ25 1A BJ29 2A UBJ29 2A BJ46 IS UBJ46 IB BJ49 28 UBJ49 26 CJ20 3A UCJ20 3A C J40 38 UCJ40 38 PL20 4A UPL20 4A PL40 48 UPL40 4B PL 122 5A U PL122 5A PL 123 5B UPL123 BJ120 UBJ120 5B 6 6 P I CONN TYPE PL3155 1 PL153 | J150 I C J150FL


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    PL3155 PL153 CJ150 J150FL CJ3150 PL155FL 550DWN SJiy/57^ PDF

    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Advance Information M J15018 Com plem entary Silicon Power Transistors M J15020* PNP M J15019 M J15021* . . . designed for use as high frequency drivers In Audio Amplifiers. • • • High Gain Complementary Silicon Power Transistors


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    J15018 J15020* J15019 J15021* MJ15020/21 PDF

    motorola MJ15001

    Abstract: MJ15002
    Contextual Info: MOTOROLA Order this document by J15001/D SEMICONDUCTOR TECHNICAL DATA NPN Com plem entary Silicon Power Transistors M J15001 PNP M J15002 The J15001 and J15002 are EpiBase power transistors designed for high power audio, disk head positioners and other linear applications.


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    MJ15001/D MJ15001 MJ15002 J15001 J15002 motorola MJ15001 PDF

    Contextual Info: Jl F O - 5 5 1 1 1 -A HONEYWELL P A RT NUMBER BZ - 7R W T04 REV DOCUMENT 14 0064381 C H A N G E D BY PRS 14M AY10 CHECK CMH .380±.030 PRODUCT CODE A Q J1500 M 8805/1-048 B B ,790±.020 3X 6-32 UNC X .219 REF BINDING HEAD T E R M IN A L S C R E W AN D LO C K W A S H E R SEM S


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    J1500 5M-1994 7RWT04 PDF

    MJ15011

    Contextual Info: MOTOROLA Order this document by J15011/D SEMICONDUCTOR TECHNICAL DATA NPN J15011* Advance Information PNP Com plem entary Silicon Power Transistors The J15011 and M J15012 are P ow erB ase pow er tra n sisto rs designed for high-pow er audio, disk head positioners, and other linear applications. These devices


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    MJ15011/D MJ15011* MJ15012* MJ15011 J15012 O-204AA PDF

    MOTOROLA MJ15023

    Abstract: TRANSISTOR 3611 MOTOROLA POWER TRANSISTOR rev 6 mj15025 motorola mj 15025 mj16025 MJ15025
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP M J15023 M J15025* Silicon Power Transistors The J15023 and J15025 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. • • ‘ M otorola Preferred D«v c«


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    MJ15023 MJ15025 J15023 J15025* O-204AA MJ15023MJ1S025 MOTOROLA MJ15023 TRANSISTOR 3611 MOTOROLA POWER TRANSISTOR rev 6 mj15025 motorola mj 15025 mj16025 PDF

    kf 203 transistor

    Abstract: 08E-12 IC 2030 PIN CONNECTIONS bjt 522 DATASHEET OF BJT 547 NE AND micro-X 2SC4227 2SC5007 BF 194 npn transistor NE681
    Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz E • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz B • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 35 MICRO-X 00 (CHIP) DESCRIPTION


    Original
    NE681 NE681 NE68100 NE68118-T1 NE68119-T1 NE68130-T1 NE68133-T1B NE68135 kf 203 transistor 08E-12 IC 2030 PIN CONNECTIONS bjt 522 DATASHEET OF BJT 547 NE AND micro-X 2SC4227 2SC5007 BF 194 npn transistor PDF

    80c42

    Abstract: 82C42 siemens J146 80c42c 82c42 via cga to vga converter circuits siemens s35 lcd smd 39a diode zener B34AB amd elan sc300
    Contextual Info: Module Élan386_3 FORTH-SYSTEME GmbH Postfach 11 03 Küferstr. 8 l D-79200 Breisach a. Rhein l D-79206 Breisach a. Rhein 07667 908-0lFax ( Module Élan386_3 (C) Copyright 1998: FS FORTH-SYSTEME GmbH Postfach 1103


    Original
    lan386 D-79200 D-79206 908-0lFax 908-200lsales lanTMSC300 80c42 82C42 siemens J146 80c42c 82c42 via cga to vga converter circuits siemens s35 lcd smd 39a diode zener B34AB amd elan sc300 PDF