MI407
Abstract: MI402 610F MA556 MA557 MI303 MI308 ND6281-3A ND6361-3A ND6361-3D
Contextual Info: - fi & £ ö S MA556 föT MA557 MI 101 MI105 MI 204 MI 206 MI 301 HÜ MI 303 MÍ308 Ml 402 M1407 ND6281-3A ND6 281-3D ND6361-3A s m ND6361-3D u n ND66S1-3A B 3 ND6651-3D B ^ S3005 S3 023 S3066 Vrrm V 45 45 30 30 30 80 180 50 270 50 110 110 110 110 33 33
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ma556ma557mi303mi308+812maxs3129mi407mi402610fnd6281-3and6361-3and6361-3d
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Microwave PIN diode
Abstract: 1SV36 ND6000 8542A N0627 1SV37 ND6361-3F ND6371-5E d6471
Contextual Info: N E C / 1SE D CALIFORNIA NEC H T-07-IS fc.427414 0001=147 1 MICROWAVE SILICON PIN DIODE ND6000 SERIES FEATURES ABSOLUTE MAXIMUM RATINGS qa - 25°o • LOW, MEDIUM, & LONG LIFETIMES SYMBOLS PARAMETERS Vr Reverse Voltage ND6261, 71, 81, ND6361, 71 ND6461, 71
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b4e7m14nd6000nd6261nd6361+12nd6461nd6481nd665171r81microwave pin diode1sv368542an06271sv37nd6361-3fnd6371-5ed6471
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BM 78a
Abstract: MI407 MI402 MA556 MA557 MI303 MI308 ND6281-3A ND6361-3A ND6361-3D
Contextual Info: - & fi £ ö S MA556 föT MA557 MI 101 MI105 MI 204 MI 206 MI 301 HÜ MI 303 MÍ308 Ml 402 M1407 ND6281-3A ND6 281-3D ND6361-3A s m ND6361-3D u n ND66S1-3A B 3 ND6651-3D B ^ S3005 S3 023 S3066 Vrrm V 45 45 30 30 30 80 180 50 270 50 110 110 110 110 33 33
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ma556ma557mi303mi308+11100nsm651-3and6651-3ds3005s3023bm 78ami407mi402nd6281-3and6361-3and6361-3d
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MI402
Abstract: MI407 MI308 MI204 MA556 MA557 MI303 ND6281-3A ND6361-3A ND6361-3D
Contextual Info: - fi & £ ö S MA556 föT MA557 MI 101 MI105 MI 204 MI 206 MI 301 HÜ MI 303 MÍ308 Ml 402 M1407 ND6281-3A ND6 281-3D ND6361-3A s m ND6361-3D u n ND66S1-3A B 3 ND6651-3D B ^ S3005 S3 023 S3066 Vrrm V 45 45 30 30 30 80 180 50 270 50 110 110 110 110 33 33
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ma556ma557mi303mi308+11100nsm651-3and6651-3ds3005s3023mi402mi407mi204nd6281-3and6361-3and6361-3d
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MI407
Abstract: MI402 MA556 MA557 MI303 MI308 ND6281-3A ND6361-3A ND6361-3D ND6651-3D
Contextual Info: - fi & £ ö S MA556 fö T MA557 MI 101 MI105 MI 204 MI 206 MI 301 HÜ MI 303 MÍ308 Ml 402 M1407 ND6281-3A ND6 281-3D ND6361-3A s m ND6361-3D u n ND66S1-3A B 3 ND6651-3D B ^ S3005 S3 023 S3066 Vrrm V 45 45 30 30 30 80 180 50 270 50 110 110 110 110 33 33
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ma556ma557mi303mi308+10100nsm651-3and6651-3ds3005s3023mi407mi402nd6281-3and6361-3and6361-3d
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Microwave PIN diode
Abstract: N0627 1sv85 8542A 1SV36 ND6361-3F ND6371-5E T07 marking 1SV26 MARKING 8542a
Contextual Info: 'T - O l- lS N E C / 1SE CALIFORNIA NEC D H b457414 0001=147 1 MICROWAVE SILICON PIN DIODE ND6000 SERIES FEATURES ABSOLUTE MAXIMUM RATINGS • LOW, MEDIUM, & LONG LIFETIMES SYMBOLS PARAMETERS Vr Reverse Voltage ND6261,71, 81, ND6361, 71 ND6461, 71 ND6481, ND6651. 61
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fa4274mnd6000t-07-/snd6261+14nd6361nd6461nd6481nd6651microwave pin dioden06271sv858542a1sv36nd6361-3fnd6371-5et07 marking1sv26marking 8542a
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MI308
Abstract: MI402 MI407 53005 MA556 MA557 MI303 ND6281-3A ND6361-3A ND6361-3D
Contextual Info: - fi & £ ö S MA556 föT MA557 MI 101 MI105 MI 204 MI 206 MI 301 HÜ MI 303 MÍ308 Ml 402 M1407 ND6281-3A ND6 281-3D ND6361-3A s m ND6361-3D u n ND66S1-3A B 3 ND6651-3D B ^ S3005 S3 023 S3066 Vrrm V 45 45 30 30 30 80 180 50 270 50 110 110 110 110 33 33
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ma556ma557mi303mi308+11100nsm651-3and6651-3ds3005s3023mi402mi40753005nd6281-3and6361-3and6361-3d
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MI204
Abstract: MI407 MI402 MI301 53005 ND6281-3A MA556 MA557 MI303 MI308
Contextual Info: - & fi £ ö S MA556 föT MA557 MI 101 MI105 MI 204 MI 206 MI 301 HÜ MI 303 MÍ308 Ml 402 M1407 ND6281-3A ND6 281-3D ND6361-3A s m ND6361-3D u n ND66S1-3A B 3 ND6651-3D B ^ S3005 S3 023 S3066 Vrrm V 45 45 30 30 30 80 180 50 270 50 110 110 110 110 33 33
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ma556ma557mi303mi308+11100nsm651-3and6651-3ds3005s3023mi204mi407mi402mi30153005nd6281-3a
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MI407
Abstract: MI402 MI204 MI303 MA556 MA557 MI308 ND6281-3A ND6361-3A ND6361-3D
Contextual Info: - fi & £ ö S MA556 föT MA557 MI 101 MI105 MI 204 MI 206 MI 301 HÜ MI 303 MÍ308 Ml 402 M1407 ND6281-3A ND6 281-3D ND6361-3A s m ND6361-3D u n ND66S1-3A B 3 ND6651-3D B ^ S3005 S3 023 S3066 Vrrm V 45 45 30 30 30 80 180 50 270 50 110 110 110 110 33 33
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ma556ma557mi303mi308+11100nsm651-3and6651-3ds3005s3023mi407mi402mi204nd6281-3and6361-3and6361-3d
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nec VARIABLE CAPACITANCE DIODE
Abstract: ND6361-3A ND6361-3D diode 3D
Contextual Info: NEC/ CALIFORNIA 1SE D NEC L427414 GOQnSb T ND6361-3A ND6361-3D C-BAND SILICON PIN DIODE OUTLINE DIMENSIONS FEATURES Units in aim OUTLINE 3A* • LOW DISTORTION: (IMs = 75 dB) • WIDE RF RESISTANCE RANGE: (30 dB) 4.0 MIN. • p 4.0 MIN. • P TYPE BASE - /¿ =L
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l427414nd6361-3and6361-3dwd6361+4b4s7414nd6361nec variable capacitance diodediode 3d
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