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    nec VARIABLE CAPACITANCE DIODE

    Abstract: ND6361-3A ND6361-3D diode 3D
    Contextual Info: NEC/ CALIFORNIA 1SE D NEC L427414 GOQnSb T ND6361-3A ND6361-3D C-BAND SILICON PIN DIODE OUTLINE DIMENSIONS FEATURES Units in aim OUTLINE 3A* • LOW DISTORTION: (IMs = 75 dB) • WIDE RF RESISTANCE RANGE: (30 dB) 4.0 MIN. • p 4.0 MIN. • P TYPE BASE - /¿ =L


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    l427414nd6361-3and6361-3dwd6361+4b4s7414nd6361nec variable capacitance diodediode 3d PDF