S22E Search Results

Contextual Info: GUVA-S22ED TECHNICAL DATA UV-B Sensor Features • • • • • Applications • Gallium Nitride Based Material Schottky-type Photodiode Photovoltaic Mode Operation Good Visible Blindness High Responsivity & Low Dark Current UV Index Monitoring Absolute Maximum Ratings

Contextual Info: TOSHIBA 2SC4322 Transistor U n it in m m i-0 5 2 5 -0 3 -0.25 1.5 - 0 . 1 5 , Silicon NPN Epitaxial Planar Type VHF ~ UHF Band Low Noise Amplifier Applications - o o o Egi F e a tu re s • Low Noise Figure, High Gain + • NF = 1 ,8dB, IS21ei2 = 7.5dB f = 2GHz

Contextual Info: 2SC3607 SILICQN NPN EPITAXIAL PLANAR TYPE TRANSISTOR U nit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. 3.6 MAX . • Low Noise Figure, High Gain N F = l.ld B , |S2leP = 9-5dB f= 1.7 MAX. jg L MAXIMUM RATINGS (Ta = 25°C CHARACTERISTIC Collector-Base Voltage

Contextual Info: 2SC5096 SIUCQN NPN EPITAXIAL PLANAR t y p e t r a n s is t o r Unit in mm V H F — UHF B A N D L O W N O ISE A M P L IF IE R A PPLICA TIO N S. • • Low Noise Figure, High Gain. N F = 1.8dB, |S2le |2= 7.5dB f=2GHz M A X IM U M R A T IN G S (Ta = 25°C)

LT 7706

Abstract: LT 7207
Contextual Info: TOSHIBA 2SC5097 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5097 V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS. Unit in mm + 0.2 2.9-0.3 • Low Noise Figure, High Gain. • N F = 1.8dB, |S 2 1 e|2= 10dB f=2GHz -H M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: 2SC5086 SILICQN NPN EPITAXIAL PLANAR t y p e t r a n s is t o r V H F -U H F B A N D L O W NOISE A M P LIF IE R A PP LIC A T IO N S . • U n it in mm Low N oise F ig u re , H igh G ain . 1.« ±0.2 N F = l . l d B , |S 2 le P = l l d B f = l G H z 0 8 ±0.1

Contextual Info: 2SC301 1 SIUCQN NPN EPITAXIAL PLANAR t y p e t r a n s i s t o r U H F-C BAND LOW NOISE AMPLIFIER APPLICATIONS. • • • High Gain Low Noise Figure High f r U nit in mm : |S 2 ie|2= 12dB Typ. : NF = 2.3dB (Typ.), f= lG H z : f'i’ = 6.5GIIz M AXIM UM RATINGS (Ta = 25°C)

Contextual Info: SILICON NPN EPITAXIAL PLANAR T Y P E TRAN SISTO R 2 3 Q 3 Q Q 3 V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. U n it in mm + 0 .5 8 .5 - 0 . 3 • Low Noise Figure. . NF = 2.5dB, |S2le|2 = 14.5dB f=500M Hz . NF = 3.0dB, |S2le|2= 9.0dB (f=lG H z) L 5 - 0 .1 5

Silicon Bipolar Transistor

Abstract: MP4T56800 MP4T568 Medium Power Bipolar Transistors S21E S22E c 1685 transistor
Contextual Info: Medium Power, 12 Volt, High fT NPN Silicon Bipolar Transistor MP4T56800 V2.00 Features •High Output Power, 23 dBm P1dB @ 1 GHz •High Gain-Bandwidth Product, 4 GHz fT •High Power Gain, | S21E |2 = 12 dB @ 1 GHz GTU max. = 11 dB @ 2 GHz Description The MP4T568 is a medium power, high fT silicon NPN

MP4T243

Abstract: Bipolar Transistor ma4t24335 Transistor 35 MICRO-X MP4T24300 MP4T24335 S21E S22E Silicon Bipolar Transistor MICRO-X low noise transistors microwave
Contextual Info: Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors MP4T243 Series V3.00 Features •Low Phase Noise Oscillator Transistor •200 mW Driv er Amplifier Transistor •Operation to 8 GHz •Av ailable as Chip •Av ailable in Hermetic Surface Mount Packages

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC3099 Unit in mm V H F - U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure. N F= 1.7dB, |S 2 ie l2 = 15dB f= 500MHz NF = 2.5dB, |S2 ie l2 = 9.5dB(f=lGHz) M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC4245 TV TUNER, UHF MIXER APPLICATIONS. Unit in iran VHF-UHF BAND RF AMPLIFIER APPLICATIONS. 2.1 ± 0.1 1. 25 ± 0 . 1 oe +i 3- 2 -Efl MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VCBO 30

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC3098 U nit in mm V H F— UHF B A N D LO W NOISE AM PLIFIER APPLICATIONS. + 0.5 2.5 - 0 . 3 + 0 .2 5 1 .5 - 0 .1 5 • Low Noise Figure. dd . NF = 2.5dB, |S2iel2= 14.5dB f= 500MHz +I Et . NF = 3.0dB, |S2 ie l2 = 9.0dB(f=lGHz)

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC3606 U nit in mm V H F -U H F B A N D LOW NOISE AM PLIFIER APPLICATIONS. • Low Noise Figure, High Gain. NF = l.ldB , |S2lel2= lld B f=lGHz M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage

2SC4364

Contextual Info: O rd e rin g n u m b e r :E N 3008 _ 2 S C 4 3 6 4 NPN Epitaxial Planar Silicon Transistor VHF. UHF/MIX. OSC. Low-Voltage High-Frequency Amp Applications Features • Low-voItage operation fr = 3.0GHztyp VCE:=3V MAG= lldB typ (VCE = 3V,IC= 3mA)

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

2SC4864

Abstract: sanyo lc 15011 ZS22 ic 3586
Contextual Info: Ordering number : EN 4 5 8 3 SAÊYO i No.4583 _ 2SC4864 NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise Amp Applications Features • Low noise : NF = l.ldB typ f=lGHz •High gain: I S21e I 2= lldB typ (f= 1GHz)

2SA1969

Contextual Info: Ordering number:EN5O90 N o.5098 SA IVO i 2 S A 1 9 6 9 II PNP Epitaxial Planar Silicon Transistor High-Frequency Medium-Output Amplifier, MediumCurrent Ultrahigh-Speed Switching Applications F eatu res • HighÍT{ÍT = l-7G H ztyp . • Large current capacity Ic = —400mA).

2SC4270

Abstract: 2SC4407 2SC4407-3
Contextual Info: Ordering num ber: EN 2760 _ 2 S C 4 4 0 7 No.2760 NPN Epitaxial Planar Silicon Transistor VHF/UHF Mixer, Local Oscillator Applications Applications • VHF/UHF mixers, frequency converters, local oscillators Features • High cutoff frequency fp = 3.0GHz typ

CQ 817

Abstract: cq 0765 TRANSISTOR cq 817 ic 4580 2SC4860
Contextual Info: Ordering number: E N 4 5 8 0 2SC4860 No.4580 NPN E pitaxial P lan ar Silicon Transistor SA\YO UHF Converter, Local Oscillator Applications i F e a tu r e s • H igh cutoff frequency :fT = 6.5GHztyp. * H igh gain : I S21e l2= 11.5dB typ f= 1GHz . •Sm all Cob : N F = 0.65pF typ.

b 595 transistor

Abstract: transistor 5 Amp 700 volt MA4T24300 transistor b 595 MA4T24335
Contextual Info: Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistor MA4T243 Series MA4T243 Series Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors Features • • • • • Case Style Low Phase Noise Oscillator Transistor 200 mW Driver Amplifier Transistor

MA4T636533

Abstract: transistor sot-23 2613 MA4T6365
Contextual Info: Low Operating Voltage, High FT Bipolar Microwave Transistors MA4T6365 V2.00 Case Styles Features ● ● ● ● ● ● Designed for Battery Operation fT to 10 GHz Low Voltage Oscillator and Amplifier Low Phase Noise and Noise Figure Hermetic and Surface Mount Packages and

Contextual Info: 2SC5277A Ordering number : ENA1075A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5277A UHF to S-Band Low-Noise Amplifier OSC Applications Features • • • • • Low-noise : NF=0.9dB typ f=1GHz : NF=1.4dB typ (f=1.5GHz)

2SC4470

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR -2SC4470 U n it in mm V H F - U H F B A N D L O W NOISE A M P LIFIER A P P LIC A TIO N S. • Low N oise Figure, H igh Gain. N F = l.ld B , |S 2 le|2 = H d B f= lG H z + 0 .5 2 5 - 0 .3 + 0.25 1 . 5 - 0 1 5_,