MA4T636533
Abstract: transistor sot-23 2613 MA4T6365
Contextual Info: Low Operating Voltage, High FT Bipolar Microwave Transistors MA4T6365 V2.00 Case Styles Features ● ● ● ● ● ● Designed for Battery Operation fT to 10 GHz Low Voltage Oscillator and Amplifier Low Phase Noise and Noise Figure Hermetic and Surface Mount Packages and
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ma4t6365ot-143ma4t636539ma4t636533+1transistor sot-23 2613
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t636
Abstract: 557 sot143 T636 A S 223 858 015 636
Contextual Info: an A M P com pany Low Operating Voltage, High FT Bipoiar Microwave Transistors MA4T6365 V2.00 Case Styles Features • • • • • Designed for Battery Operation fT to 10 GHz Low Voltage Oscillator and Amplifier Low Phase Noise and Noise Figure Hermetic and Surface Mount Packages and
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ma4t6365ot-143ma4t636539t636+3557 sot143t636 a s223 858 015 636
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MA4T636500
Abstract: MA4T6365
Contextual Info: M an A M P com pany Low Operating Voltage, High FT Bipolar Microwave Transistors MA4T6365 V2.00 Case Styles Features • • • • • D esigned for Battery Operation fT to 10 GHz Low Voltage Oscillator and Amplifier Low Phase Noise and Noise Figure Hermetic and Surface Mount Packages and
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26-13 transistor sot-23
Abstract: micro X Silicon Bipolar Transistor Micro-X Ceramic
Contextual Info: Low Operating Voltage, High fT Bipolar Microwave Transistors MA4T6365XX Series Features MA4T636535 • Designed for Battery Operation Micro -X • fT to 10 GHz • Low Voltage Oscillator and Amplifier • Low Phase Noise and Noise Figure • Hermetic and Surface Mount Packages
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ma4t6365xxma4t636535ma4t636539ot-143+326-13 transistor sot-23micro xsilicon bipolar transistor micro-x ceramic
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MP4T6365
Abstract: Bipolar Transistor MP4T636535 MP4T636539 S21E S22E MA4T636533 MP4T636500 MP4T636533 26-13 transistor sot-23
Contextual Info: Low OperatingVoltage, High fT Bipolar Microwave Transistors MP4T6365 V2.00 Features •Designed for Battery Operation •fT to 10 GHz •Low Voltage Oscillator and Amplifier •Low Phase Noise and Noise Figure •Hermetic and Surface Mount Packages and Chips Av ailable
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mp4t6365ot-143mp4t636539bipolar transistor+7mp4t636535s21es22ema4t636533mp4t636500mp4t63653326-13 transistor sot-23
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Contextual Info: Low OperatingVoltage, High fT Bipolar Microwave Transistors MP4T6365 V2.00 Features • Designed for Battery Operation • f T to 10 GHz • Low Voltage Oscillator and Amplifier • Low Phase Noise and Noise Figure • Hermetic and Surface Mount Packages and
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sot23 a4p
Abstract: transistorS 812 JANTX2N2857 7104F MA4P275S ma4cp104A ODS-1091 MA4CP101B MA4E2503L MA4CS102B
Contextual Info: SMQ High Volume Standard PIN Switching Diodes Model Num ber Case S tyle M A4P1250 M A4P1450 1072 1091 V oltage Rating Volts lR = 10 h A 50 50 M axim um C apacitance (PF) 1 = 1 MHz VR = 50 V 1.2 2.5 M inim um C a rrier Lifetim e <^s) M axim um R e sistance
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a4p1250a4p1450ma4p4001a4p4002f+16a4p4006fa4p4301fa4p4302fa4p4306f7001fa4p7002fsot23 a4ptransistors 812jantx2n28577104fma4p275sma4cp104aods-1091ma4cp101bma4e2503lma4cs102b
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pin diode gamma detector
Abstract: Tuning Varactors UHF schottky diode GaAs p-i-n diodes RF limiter PIN diode impatt diode IMPATT 10 GHz gunn diode 6 GHz PIN diode Microwave zero bias detector diodes
Contextual Info: TABLE OF CONTENTS SURFACE MOUNT PRODUCTS PIN DIODES IN SMQ SQUARE SURFACE MOUNT DIVERSITY SWITCHES DC-2 GHz HIGH POWER (4 PACKAGES . 6
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ot-23ot-143ma4t6365xxpin diode gamma detector+9tuning varactorsuhf schottky diodegaas p-i-n diodesrf limiter pin diodeimpatt diodeimpatt10 ghz gunn diode6 ghz pin diodemicrowave zero bias detector diodes
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MA40285
Abstract: ma4882 MA40150 MA46H201 masw2070g1 MA46H206 MA47203 JANTX2N2857 MA4P9 MA40420
Contextual Info: MODEL NUMBER INDEX MODEL NUMBER PAGE 1N5165 .238 1N5166 .238 1N5167 .238 1N5712 .238 1N5713 . 238
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1n51651n51661n51671n5712+161n57131n57672n28572n35702n35712n3572ma40285ma4882ma40150ma46h201masw2070g1ma46h206ma47203jantx2n2857ma4p9ma40420
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