CQ 817
Abstract: cq 0765 TRANSISTOR cq 817 ic 4580 2SC4860
Contextual Info: Ordering number: E N 4 5 8 0 2SC4860 No.4580 NPN E pitaxial P lan ar Silicon Transistor SA\YO UHF Converter, Local Oscillator Applications i F e a tu r e s • H igh cutoff frequency :fT = 6.5GHztyp. * H igh gain : I S21e l2= 11.5dB typ f= 1GHz . •Sm all Cob : N F = 0.65pF typ.
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en45802sc4860cq 817cq 0765+2transistor cq 817ic 4580
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2SC4872
Abstract: 2SC4837 2SC4853 2SC4854 2SC4855 2SC4856 2SC4857 2SC4858 2SC4859 2SC4860
Contextual Info: - 216 - W. Ä T a = 2 5 ^ , * £ P iâ T c = 2 5 T î WH 2SC 4837 2SC4853 2SC4854 2SC4855 2SC4856 2SC4857 2SC4858 2SC4859 2SC4860 2SC4861 2SC4862 2SC4863 2SC4864 2SC4865 2SC4866 2SC4867 2SC4868 2SC4869 2SC4870 2SC4872 2SC4873 2SC4884 2SC4885 2SC4890 2SC4891
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2sc48372sc48532sc48542sc4855+72sc48562sc48572sc48582sc48592sc48602sc48612sc4872
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ic 4580
Abstract: KT 817 transistor 2SC4860 KT 817 transistor kt 801 EN4580
Contextual Info: Ordering number:EN4580 NPN Epitaxial Planar Silicon Transistor 2SC4860 UHF Converter, Local Oscillator Applications Features Package Dimensions • High cutoff frequency : fT=6.5GHz typ. · High gain : S21e2=11.5dB typ f=1GHz . · Small Cob : NF=0.65pF typ.
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en45802sc4860s21e22059b+4ic 4580kt 817 transistorkt 817transistor kt 801
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3SK190
Abstract: SGF19 2SC2814-2 2sk543 cross 2sc2078 2SK715
Contextual Info: High Frequency Transistors Electrical characteristics Ta = 25 deg. C Absolute maximum ratings Device Package type Application lcao max @ Vcb VcBQ VCEO Vebo (V) (V) (V) , te (mA) Pc (mW) J o Icbo max m hFE @ Vce • Ic Vcb (V) h rc f i @ Vce • lc Vce Ip
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2sk16452sk1646sgf104sgf11v+7sgf153sk190sgf192sc2814-22sk543 cross2sc20782sk715
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2SC3258
Abstract: 2SC3950 2SC3209 3918 2SC4116 2sc2562 2SC3958 2SC3874 2SC4211 2SD667
Contextual Info: - £ Type No. 2SC 3927 £ Manuf. ^ H B ft SANYO TOSHIBA -yy'ry 2SC3Q90 2SC4157 2SC 3928 = Ü 2SC2812 2SC2712 2SC 3929 / 2SC4211 2SC4116 2SC4211 2SC4211 2SC 3931 fé T fé T fé T fé T 2SC 3932 fé 2SC 3933 2SC4853 2SC 3935 fé T fé T fé T 2SC 3936 fé T
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2sc30902sc41572sc28122sc2712+142sc16232sc24632sd601a2sc2412k2sc42112sc41162sc32582sc39502sc320939182sc25622sc39582sc38742sd667
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RT1N241M
Abstract: 2sc3246 2SC4159 4392 DTC143ES 2SC3296 2sc3374 DTC114EU 2sc4368 DTC144EU
Contextual Info: - m £ T y p e No. tt « Manuf. SANYO 2SC 4357 h m ¿ÚUi0¿0 2SC 4359 T 2SC3458 2SC 4351 = m 2SC 4362 = # Hi ^ TOSHIBA B V NEC HITACHI tL £ 2SC 4366 S 4 2SC3661 2SC 4367 a s 2SC3776 2SC 4368 tö T MA T S U S H I T A h m MITSUBISHI □ — A ROHM U N221F
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2sd16232sc28732sc3458n221f+16rt1n432cdtc143xkun4216rt1n432sdtc143xsrn1401rt1n241m2sc32462sc41594392dtc143es2sc32962sc3374dtc114eu2sc4368dtc144eu
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2SC144
Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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t258-omifax062sc1442sd466+12sc5266
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2sc4857
Abstract: 2SC4872 2sc487 2sc4856 2sc4859
Contextual Info: I High-Performance Si Bipolartransistor fT > 5GHz Series Features High Gain, Low Noise G -III-NRP (G iga-lll-N oise Reduction Process) technology subm icron hyperfine process developed for high gain and low noise characteristics Low Power Dissipation High perform ance at low voltage and low current for low power dissipation
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2sc4853250mm2js21e2sc4857+42sc48722sc4872sc48562sc4859
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VHF Transceiver IC
Abstract: VHF AM Transceiver IC 2SK937 2SC4856 mosfet vhf power amplifier 2SK715 2SK315 2Sc2314 2SC4910 2SC2839
Contextual Info: Continued from previous page Absolute maximum ratings I Device Package Applications type ! Vcao VcEO V I (V) VEBO (V) ta Electrical characteristics (Ta = 25 °C) I ! (mA) | ! Ic b o max @ V cb T, Pc (mW) (4 ) ¡ le s o m ax ! o»A) Vc b TO hFE @ VcE • IC
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2sc42722sc29992sc44332sc2839+152sc44022sc44032sc44072sc44062sc48722sc4868vhf transceiver icvhf am transceiver ic2sk9372sc4856mosfet vhf power amplifier2sk7152sk3152sc23142sc4910
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2SC4290A
Abstract: C 4927 2SD2356 2SC4289 2SD1407 4894 4902 2SC3997 2SC4289A 2SC4911K
Contextual Info: - 202 - S € Type No. 4t £ Manuf. -M H SANYO B TOSHIBA m NEC B AL HITACHI « ± a F U JIT S U fâ T MATSUSHITA 2SC3052 2SC 4894 të T 2SC4453 2SC343Î 2SC 4895 □—A 2SD1828 2SD1407 2SC 4896 S tL 2SC 4897 B tL 2SC3997 2SC4290A 2SC 4898 fâ T 2SC3750 2SC3310
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2sc44532sc3432sc30522sc4911k+132sd18282sd14072sd21612sd21132sd16332sc4289a2sc4290ac 49272sd23562sc4289489449022sc3997
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2sk303
Abstract: 2SK2219 2SK283 sk184 2SK2171 SK174 2SK436 2SK848 P/N146071 2sd22
Contextual Info: SA0YO Lists for- Type No . Ind icat ion on Transistors. 2 SA t y p e Type No. 2 S A1 2 5 2 2SA1256 2 S A 12 5 7 2 S A1 3 3 1 2 S A13 3 8 2 S A 13 41 2 S A13 4 2 2SA1343 2 S A 13 4 4 2 S A 14 1 5 2 S A 14 1 6 2 S A 14 1 7 2 S A1 4 1 8 2 S A1 4 1 9 2 S A14 3 4
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2sa12562sa13432sa16552sk2167+142sk21682sk21702sk21712sk22602sk22182sk22192sk3032sk283sk184sk1742sk4362sk848p/n1460712sd22
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2SC4872
Abstract: 2sc4870
Contextual Info: s m m NEW PRODUCT VERY HIGH-FREQUENCY TRANSISTOR SERIES 1.2 Newly developed SANYO very high-frequency transistors can be used for various applications such as for communication equipment and measuring equipment. They are superior when used with low voltage drive.
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2sc48532sc48542sc48552sc4856+82sc48572sc48582sc48592sc48602sc4861254mhi2sc48722sc4870
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Contextual Info: SA/iYO Lists for- T y p e No. 2SA type_ Type No. ma rk- Package ing 2SA 1252 D • C p E • 2 SA 125 6 C p 2 SA 125 7 G • C p 2 SA 13 3 1 0 • C p A L 2SA1338 C p 2 SA 13 4 1 B L c p 2 SA 134 2 C L c p 2 SA 134 3 D L c p 2 SA 1344 E L c p
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2sa13382sa15082sa15732sa1580+62sd10482sd16182sd16192sd16202sd16212sd1622
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