2SC4910 Search Results

transistor 2sc4910

Abstract: 2SC4910 2SC4910 npn 13J2
Contextual Info: Ordering num ber: EN44 11 No.4411 _ 2SC4910 NPN Epitaxial Planar Silicon Transistor SA\YO 1 VHF-Band Power Amp Applications Features • On-chip emitter ballast resistors. Absolute Maximum Ratings at Ta = 25°C Collector-to-Base Voltage Vcbo Collector-to-Emitter Voltage

Contextual Info: Ordering number:ENN4411 NPN Epitaxial Planar Silicon Transistor 2SC4910 VHF-Band Power Amplifier Applications Features Package Dimensions • On-chip emitter ballast resistors. unit:mm 2084B [2SC4910] 4.5 1.9 10.5 2.6 1.4 1.0 8.5 1.2 7.5 1.2 1.6 0.5 0.5 1 Specifications

Contextual Info: Ordering num ber: EN 4411 No.4411 _ 2SC4910 N P N Epitaxial Planar Silicon Transistor VHF-Band Power Amp Applications Features • On-chip emitter ballast resistors. A bsolu te Maximum Ratings atTa=25°C Collector to Base Voltage V cbo Collector to Emitter Voltage

transistor 2sc4910

Abstract: N4411 2SC4910 ITR07744 ITR07745 ITR07746 ITR07747 ITR07748 AO1176 44113
Contextual Info: 注文コード No. N 4 4 1 1 2SC4910 No. N4411 30700 2SC4910 特長 NPN エピタキシァルプレーナ形シリコントランジスタ VHF 帯電力増幅用 ・エミッタ安定化抵抗を内蔵。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃

2SC4910

Abstract: ITR07744 ITR07745 ITR07746 AO117
Contextual Info: Ordering number:ENN4411 NPN Epitaxial Planar Silicon Transistor 2SC4910 VHF-Band Power Amplifier Applications Features Package Dimensions • On-chip emitter ballast resistors. unit:mm 2084B [2SC4910] 4.5 1.9 10.5 2.6 1.4 1.0 8.5 1.2 7.5 1.2 1.6 0.5 0.5 1 Specifications

Contextual Info: Ordering number: EN4411 2SC4910 NÓ.4411 NPN Epitaxial Planar Silicon Transistor VHF-Band Power Amp Applications F eatures • On-chip emitter ballast resistors. A bsolute M aximum R atings at Ta=25°C Collector-to-Base Voltage V cbo Collector-to-Emitter Voltage

transistor 2sc4910

Abstract: 2SC4910 2SC4910 npn 2SC491 AX-8548
Contextual Info: Ordering number:EN4411 NPN Epitaxial Planar Silicon Transistor 2SC4910 VHF-Band Power Amplifier Applications Features Package Dimensions • On-chip emitter ballast resistors. unit:mm 2084B [2SC4910] 1.9 10.5 4.5 2.6 1.4 1.0 8.5 1.2 7.5 1.2 1.6 0.5 0.5 1 2.5

3SK190

Abstract: SGF19 2SC2814-2 2sk543 cross 2sc2078 2SK715
Contextual Info: High Frequency Transistors Electrical characteristics Ta = 25 deg. C Absolute maximum ratings Device Package type Application lcao max @ Vcb VcBQ VCEO Vebo (V) (V) (V) , te (mA) Pc (mW) J o Icbo max m hFE @ Vce • Ic Vcb (V) h rc f i @ Vce • lc Vce Ip

2SB1406

Abstract: 2SK715
Contextual Info: Product Selection Guide by Function Very High Frequency Applications Classified by package and arran g ed in order of decreasing fr. M inus sign for P N P is om itted due to space lim itations. PG tM A G ,N F:f= 0.9G H z Type N um ber Pilgt* 2SC3779 NP NP

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

C3293

Abstract: C3502 c3955 C3953 D1347 D1804 C3467 a1540 D1803 a1538
Contextual Info: SA0YO New Package FLP Full Mold Large P a c k a g e Seri es Sanyo hasdeveloped FLP (Full Mold Large Package) to meet the needs of miniaturization and automatic insertion in the midst of progressingindustrial and consumer electronics. Though it is a large power type with Pc=1.5W, it is achieved that theheight on

C3293

Abstract: D1804 c3807 C3953 C3502 C3467 d1815 B985 B1166 c3950
Contextual Info: SA0YO N e w P a c k a g e FLP Full M o l d L a r ge P a c k a g e S e r i e s Sanyo hasdeveloped FLP (Full Mold Large Package) to meet the needs of miniaturization and automatic insertion in themidst of progressingindustrial and consumer electronics. Though it is a large power type with Pc=1.5ff, it is achieved that

VHF Transceiver IC

Abstract: VHF AM Transceiver IC 2SK937 2SC4856 mosfet vhf power amplifier 2SK715 2SK315 2Sc2314 2SC4910 2SC2839
Contextual Info: Continued from previous page Absolute maximum ratings I Device Package Applications type ! Vcao VcEO V I (V) VEBO (V) ta Electrical characteristics (Ta = 25 °C) I ! (mA) | ! Ic b o max @ V cb T, Pc (mW) (4 ) ¡ le s o m ax ! o»A) Vc b TO hFE @ VcE • IC

smd transistor marking 12W

Abstract: SMD transistor Marking 13w SMD type Marking 13w SPM5001 SOT89 PNP marking GA ec3h04b smd transistor 12W 52 SMA4205 6c 6pin SGD103
Contextual Info: RF Devices Jun.2006 Hyper Device Business Unit, Semiconductor Company SANYO Electric Co.,Ltd. New Products High High Gain，Low Gain，Low Noise Noise SiRF–Bipolar Transistor MCH4009 •Packege : MCPH4 ■Features High Gain・・・|S21e|2=17dB＠2GHz 0.3

2SC2553

Abstract: 2SC1845 2SC3531 2SC3536 2SC2829 2SC2837 2sc2362 2SC2389 2sc3040 2SC3358
Contextual Info: - 148 - m % tt Type No. £ Man iif. ÏÏWjt 2SC 2828 # h SANYO ^ te T fâ T 2SC 2832 4? te T 2SC 2832A te T 2SC 2833 ^ te T 2SC 2833A te T ✓ 2SC 2834A 2SC 2837 te T te T 2SC30S6 2SC3Û87 2SC3089 ± M. F U JIT S U te T MATSUSHITA 2SC3365 2SC2740 2SC3365 2SC2740