13J2 Search Results

Contextual Info: REVISION M0DS-C-6PXC-X 13J20 DO NOT SCALE FROM THIS PRINT 18.00 TYPE -C _ J " PDSITIDNS/CDNTACTS-1 —6P4Ci 6 PDS/4 CDN -6P6D 6 PDS/6 CDN PLATING -Gi .000010' Au -Hi. 000030' Au -Ei .000050' Au S E E NO TE 2 2 ° MAX SWAY (EITHER DIRECTION)

MPN7620-ET47

Abstract: mpn7620 MPN7 MPN-7630 cla4603-000 MCE Metelics
Contextual Info: sj Ul_ UC, MPV-22-2003 UU tJLJ • 14:03 I I\ 1l—'w 14087337645 MCE METEL ICS P.02 MPN7600 Series Limiter Diodes Mesa Construction Mete Iics Corporation Applications: Limiters Maximum Ratings Storage Temperature Operating Temperature Replaces cC/W Chip Size

Contextual Info: lOOOpF j £ K V PIN S 4&5 o ELECTRICAL SPECIFICATIONS: NOTES 1.0 TURNS RATIO: P 8 - P 6 - P 7 : (J 1 -J2 ) ( P 2 - P 3 - P 1 ) : (J 3 -J6 ) (P 7 -P 8 ) (P 1 -P 2 ) 1.0 PINS WITHDUT ELECTRICAL CONNECTION ARE OMITTED, 1CT : 1± 3% 1CT : 1 ± 3 % 2.0 INDUCTANCE :

13B1

Abstract: 13B3 13S19 13B36 13X1376
Contextual Info: 620 NORTH LINDENWOOD, OLATHE, KANSAS 66062 www.torotelproducts.com 913 747-6111 FAX (913) 747-6110 PART NUMBER ½LI2 ( J) "L" NO DC (μH) DCR MAX. (Ω) DCI MAX. (Amps) "L" WITH DCI (μH) TEST LEVEL (VRMS) 5% 10% 20% 30% 40% 50% DCI (Amps) FOR % DECREASE IN "L"

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

CSR 6030

Abstract: MD 7144 md 8243 CSR 8311 ISO 8015 tolerance CSR 3012
Contextual Info: I CSR13 MIL-C-39003/01 Solid Tantalum Capacitors M a llo r Y GENERAL SPECIFICATIONS Hermetically Sealed Graded Failure Rates DC Leakage: At +25°C - See Table Limit. At +85°C - 10 x Table Limit. At +125°C - 12.5 x Table Limit. Capacitance Change Maximum:

diode 13J2

Abstract: DIODE smd marking CODE WA smd ic marking 1ft IT129 13J2 cb pj 47 diode LM 3883 smd diode pj 72 ITG40 t31d
Contextual Info: MIL-M-38510/420A 26 OCTOBER 1984 W ERSEÜPŒ -MIL-M-38510/420 USAF 27 September 1977 MILITARY SPECIFICATION 1 MICROCIRCUITS, DIGITAL, N-CHANNEL, SILICON GATE MONOLITHIC 8 BIT MICROPROCESSOR {FIXED INSTRUCTION) This sp ecificatio n is approved for use by a ll Departments and

sd1127

Contextual Info: <3\ U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 SD1127 RF & MICROWAVE TRANSISTORS VHP FM MOBILE APPLICATIONS Features • • • • • I 175MHz 12.5 VOLTS POUT = 4.0 W MINIMUM G P =12.0dB

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5

PCR 046 j

Abstract: 9721 elat
Contextual Info: 14 MC68HC705BD3 The MC68HC705BD3 is functionally equivalent to MC68HC05BD3, but with increased R A M size to 256 bytes and the user ROM is replaced by an 7.75K-bytes user EP R O M located from $2000 to $3EFF . The entire MC68HC05BD3 data sheet applies to the MC68HC705BD3, with

13J21

Abstract: 13B33 164-32UNC 13M40
Contextual Info: 13402 SOUTH 71 HIGHWAY GRANDVIEW, MO 64030 E-mail: torotel@sound.net 816 761-6314 FAX (816) 763-2278 PART NUMBER ½LI2 ( µJ ) "L" NO DC ( µ H) DCR MAX. (Ω) DCI MAX. (Amps) "L" WITH DCI (µH) TEST LEVEL (VRMS) 5% 10% 20% 30% 40% 50% DCI (Amps) FOR % DECREASE IN "L"

IN3492

Abstract: sg 4001 diode 1NA4 md914 35C10 1N20b 1n67a 0a202 diode iN3495 1469r
Contextual Info: NIAX VAX U E S 0 2 5 ° D IO D E Vw PRV If Vf IR T Y P E u S E 0A5 100 .3 5 1 .3 30 G GP 0 A6 60 .3 5 1 .3 9 .0 G GP 0A7 30 .2 5 1 .7 6 .0 G SW O A IO 30 1 .0 .9 5 600 G SW OA3I 85 12 0 .7 40 G GP 0A47 30 .1 5 .6 5 10 G 0A70 2 2 .5 . 15 .2 5 30 G RF OA71 90

Contextual Info: lOOOpF+gQX j 2KV 1CT i 1 P 8 > © -vauuuu-1 -«uuuo-i • A A /H -ASUUUU^ 75 ■AW — 75 1CT : 1 (P2> ~lauuU~ - 'S J U U U U - 1 -L f s n n n . JVIDTES. 1.0 PINS WITHDUT ELECTRICAL CONNECTION ARE OMITTED, 2.0 ALL RESISTORS ARE ± 5 X TOLERANCE, ELECTRICAL SPECIFICATIONS:

Contextual Info: T7w Optim um Cfrofc* industries , PART NUMBER V2 LI2 PJ 300 RED SCHOOL LANE INC. "L“ NO DC DCR MAX. DCI MAX. (PH) (Q) (Amps) "L" W ITH DCI ( pH) PHILLIPSBURG, N.J. 08865 TEST LEVEL (VRMS) (908) 454-2600 FAX (908) 454-3742 D C I (A m ps) F O R % D E C R E A S E IN "L

EIA 549 Class 130B transformer

Abstract: mcf 300.04 capacitor 225 35k 844 SMD av 1.40.00 mkt x2 .01uf NTC 20K honeywell 1000 rpm dc motor 12v 100watt BO 680Y clarostat POTENTIOMETER 73JA SMD MARKING CODE 503b 03028BR
Contextual Info: ND3% BASE1 XXXX0118-0396-1-P 396 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 20-07-11 Hour: 11:09 TS:TS date TS time CAPACITORS Find Datasheets Online CERAMIC CAPACITORS MULTILAYER CERAMIC CAPACITORS - 0.5pF TO 82,000pF 2 MULTILAYER CERAMIC CAPACITORS - 0.5pF TO 82,000pF CONT.

st178

Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
Contextual Info: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech­ nician and yet economically meet replacement needs of the wide variety of entertainment equipment

triac zd 607

Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
Contextual Info: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni­ cian. The information contained herein is based on an analysis of the published

BA100 diode

Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
Contextual Info: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any

Contextual Info: ELECTRICAL SPECIFICATIONS: NDTES 1.0 TURNS RATIO: P 2 - P 3 - P 1 : (J 6 -J3 ) ( P 6 - P 4 - P 5 ) : (J 2 -J1 ) 1CT : 1 ±3% 1CT : 2.5 ±3% 2.0 INDUCTANCE: 200uH MIN. 35uH MIN. » 0.01V, 10KHz 0.01V, 10KHz 3.0 LEAKAGE INDUCTANCE: 0.3uH MAX. 0.3uH MAX.