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    SD1127 Search Results

    SD1127 Datasheets (11)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SD1127
    Advanced Power Technology RF & MICROWAVE TRANSISTOR VHF FM MOBILE APPLICATIONS Original PDF 71.39KB 3
    SD1127
    Advanced Power Technology RF & MICROWAVE TRANSISTORS VHF FM MOBILE APPLICATIONS Original PDF 69.89KB 3
    SD1127
    Advanced Semiconductor Transistor Original PDF 20.23KB 1
    SD1127
    Microsemi RF & MICROWAVE TRANSISTORS VHF COMMUNICATIONS Original PDF 106.28KB 3
    SD1127
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 123.04KB 1
    SD1127
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 72.98KB 1
    SD1127
    STMicroelectronics Shortform Data Book 1988 Short Form PDF 56.15KB 1
    SD1127
    Thomson Semiconductors Telecom Integrated Circuits Data Book 1985 Scan PDF 39.04KB 1
    SD1127
    Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF 206.85KB 2
    SD1127BD
    Topaz Semiconductor 60 V, 4 ?, N-channel enhancement-mode vertical D-MOS FET ultra low-leakage Scan PDF 65.93KB 2
    SD1127CHP
    Topaz Semiconductor 60 V, 4 ?, N-channel enhancement-mode vertical D-MOS FET ultra low-leakage Scan PDF 65.93KB 2

    SD1127 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SD1012-09

    Abstract: SD1072 T5400 SD1273 SD1098-03
    Contextual Info: RF NPN Power Transistors Part Number Microsemi Division Package Outline • SD1483 SD1015 SD1013 SD1013-03 SD1019 SD1019-05 SD1441 SD1273 SD1012 SD1012-09 SD1166 SD1127 SD1012-03 SD1143 SD1143-01 SD1013-09 SD1062 SD1272 SD1272-02 SD1014-02 SD1014-06 SD1070


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    sd1012-09sd1072t5400sd1273+1sd1098-03 PDF

    SD1127

    Abstract: Arco 315 arco 402
    Contextual Info: H MS _r~>_arm/m S IV U C r U S e m i P ro g re s s P o w e re d b y T ec h no log y 140 C o m m erc e Drive n i i v i M o n tg o m eryville , IPA 18936-1013 Tel: 215 63 1-9 840 •■■vsI l i u w i i i b i y v i i i b , ^ . . «-> _ SD1127 RF & MICROWAVE TRANSISTORS


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    230mhz175mhzsd1127s88sdh27-0+5s8ss01127-03s88sd1127s88s01-274garco 315arco 402 PDF

    SD1127

    Abstract: SD1127BD SD1127CHP
    Contextual Info: TOPAZ SEMICONDUCTOR DSE I l o a s s a t OOOIOMO 1 r - 3 S '-c? S ' - I — SD1127 SEMICONDUCTOR N-CHANNEL ENHÂ^CEI^E^Î-^ODE VERTICAL D-MOS FE7 ULTRA LOW-LEAKA@E ORDERING INFORMATION SD1127BD TO-226AA TO-92 Plastic Package SD1127CHP Sorted Chips In Waffle Pack


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    o-226aasd1127bdsd1127chp80nsec+2width-100sd1127 PDF

    Contextual Info: SD1127 RF & MICROWAVE TRANSISTORS VHF FM MOBILE APPLICATIONS Features • • • • • 175 MHz 12.5 VOLTS POUT = 4.0 W MINIMUM GP = 12.0 dB GROUNDED EMITTER 1. Collector 2. Base 3. Emitter TO-39 DESCRIPTION: The SD1127 is a epitaxial silicon NPN transistor designed


    Original
    sd1127 PDF

    CHIP TRANSISTOR

    Abstract: gp 219 NPN planar RF transistor SD1127
    Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 SD1127 RF & MICROWAVE TRANSISTORS VHF COMMUNICATIONS Features • • • DESIGNED FOR VHF MILITARY AND COMMERCIAL EQUIPMENT 4.0 WATTS (MIN) WITH GREATER THAN 10 dB GAIN


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    sd1127msc0936chip transistorgp 219+1npn planar rf transistor PDF

    sd1127

    Contextual Info: <3\ U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 SD1127 RF & MICROWAVE TRANSISTORS VHP FM MOBILE APPLICATIONS Features • • • • • I 175MHz 12.5 VOLTS POUT = 4.0 W MINIMUM G P =12.0dB


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    sd1127175mhz136mhz155mhz+211-j1413-j20 PDF

    SD1127

    Contextual Info: SD1127 SILICON NPN RF POWER TRANSISTOR DESCRIPTION: The ASI SD1127 is designed for VHF mobil communications applications up to 175 MHz. FEATURES: PACKAGE STYLE TO-39 • Grounded Emiter The ASI SD1127  Gp 12 dB @ 12.5V 175 MHz  Pout 4.0 W Min. MAXIMUM RATINGS


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    sd1127 PDF

    J148

    Contextual Info: SD1127 SILICON NPN RF POWER TRANSISTOR DESCRIPTION: The ASI SD1127 is designed for VHF mobil communications applications up to 175 MHz. FEATURES: PACKAGE STYLE TO-39 • Grounded Emiter The ASI SD1127 • Gp 12 dB @ 12.5V 175 MHz • Pout 4.0 V Min. MAXIMUM RATINGS


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    sd1127j148 PDF

    Contextual Info: SD1127 RF & MICROWAVE TRANSISTORS VHF FM MOBILE APPLICATIONS Features • • • • • 175 MHz 12.5 VOLTS POUT = 4.0 W MINIMUM GP = 12.0 dB GROUNDED EMITTER 1. Emitter 2. Base 3. Collector TO-39 DESCRIPTION: The SD1127 is a epitaxial silicon NPN transistor designed


    Original
    sd1127 PDF

    SD1127

    Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 SD1127 RF & MICROWAVE TRANSISTORS VHF FM MOBILE APPLICATIONS Features • • • • • 175 MHz 12.5 VOLTS POUT = 4.0 W MINIMUM GP = 12.0 dB GROUNDED EMITTER 1. Emitter


    Original
    sd1127 PDF

    TO-228AA

    Contextual Info: TELEDYNE COMPONENTS T W X m EÖE D M öWbUS ^ æ QüQb417 3 J * r 3s m i 2 7 SEMICONDUCTOR N-CHANNEL ENHANCEMENT-MODE VERTICAL D-MOS FET ULTRA LOW-LEAKAGE ORDERING INFORMATION SD1127BD TO-228AA TO-92 Plastic Package SD1127CHP Sorted Chips in Waffle Pack


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    qb417o-228aasd1127bdsd1127chp+2ot-143to-228aa PDF

    SD1127

    Abstract: J11 transistor
    Contextual Info: SD1127 RF & MICROWAVE TRANSISTORS VHF FM MOBILE APPLICATIONS Features • • • • • 175 MHz 12.5 VOLTS POUT = 4.0 W MINIMUM GP = 12.0 dB GROUNDED EMITTER 1. Collector 2. Base 3. Emitter TO-39 DESCRIPTION: The SD1127 is a epitaxial silicon NPN transistor designed


    Original
    sd1127j11 transistor PDF

    J148

    Abstract: SD1127
    Contextual Info: SD1127 RF & MICROWAVE TRANSISTORS VHF FM MOBILE APPLICATIONS Features • • • • • 175 MHz 12.5 VOLTS POUT = 4.0 W MINIMUM GP = 12.0 dB GROUNDED EMITTER 1. Emitter 2. Base 3. Collector TO-39 DESCRIPTION: The SD1127 is a epitaxial silicon NPN transistor designed


    Original
    sd1127j148 PDF

    J148

    Abstract: SD1127
    Contextual Info: SD1127 SILICON NPN RF POWER TRANSISTOR DESCRIPTION: The ASI SD1127 is designed for VHF mobil communications applications up to 175 MHz. FEATURES: PACKAGE STYLE TO-39 • Grounded Emiter The ASI SD1127 • Gp 12 dB @ 12.5V 175 MHz • Pout 4.0 V Min. MAXIMUM RATINGS


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    sd1127j148 PDF

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


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    2sc429gtm2sc4582sc458lg2sc503+162sc5042sc5102sc5122sc5192sc520a2sc594sn76131tlo72cptoshiba 2n3055m53207p2n3055 toshibakia7313apkia7640apla5530m5l8155ptbb1458b PDF

    Motorola transistors MRF 947

    Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
    Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that


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    2phx11136q-17motorola transistors mrf 947trimpots 3296transistor c5386+71n47402n5591 motorola2n5688cq 542 transistor npn motorolaequivalent transistor of 2sc3358hb215/dic cd 2399 gp PDF

    mosfet cross reference

    Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
    Contextual Info: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is


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    t0-92options4206azvn4206czvn4206e+15zvn4306atn2106k1vn2210n3tn0606n3tn0606n6mosfet cross referencepj 929 diodepj 1229 diodebss250vn0109n5pj 66 diodepj 929bss295 "direct replacementbss295 "cross referencepj 69 diode PDF

    SD1127

    Contextual Info: s G S-THOMSON OMC D | 7 ^ 2 3 7 aaaGG2,ì 1 T ~ ? Z z * P !ix . S O L ID ST A T E M IC R O W A V E T H OM S O N COMPONEN T S-M O ST EK SD 1127 THOMSON-CSF COMPONENTS CORPORATION Montgomeryville.PA 18936• 215 362-8500■ T W X 510-661-7299 ,. v n¡. _ ‘


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    sd1127 PDF

    PNP 2GHz LNA

    Abstract: mce544 bfr96 equivalent TRANSISTOR NPN 5GHz TRANSISTOR PNP 5GHz MC1333 ms1649 MCE545 transistor 5ghz pnp MRF630
    Contextual Info: MC1333 WAFFLE PACK DIE RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MC1333 is a low noise, high gain, discrete silicon bipolar transistor, shipped in waffle pack. ! Low noise-2.5dB@500MHz ! Gold Back Metal IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com


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    mc1333500mhzsd1127/mrf237ms1649/mrf630+13mrf837/mrf8372mrf559400ma200mapnp 2ghz lnamce544bfr96 equivalenttransistor npn 5ghztransistor pnp 5ghzms1649mce545transistor 5ghz pnpmrf630 PDF

    bfr96 equivalent

    Abstract: MCE544 bfr96 equivalent TRANSISTORS MC1343 transistor equivalent bfr96 2N5031 equivalent TRANSISTOR PNP 5GHz MRF630 MRF544 microsemi MRF237
    Contextual Info: MCE545 WAFFLE PACK DIE RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MCE545 is a high breakdown, high gain, discrete PNP silicon bipolar transistor, shipped in waffle pack. ! High Breakdown BVCEO = 70V ! Gold Back Metal


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    mce545symb333sd1127/mrf237ms1649/mrf630+14mrf837/mrf8372mrf559400ma200mabfr96 equivalentmce544bfr96 equivalent transistorsmc1343transistor equivalent bfr962n5031 equivalenttransistor pnp 5ghzmrf630mrf544microsemi mrf237 PDF

    PT8811

    Abstract: PT8740 transistor pt4544 PT8828 RF Transistor S10-12 2N6095 SD1076 MRF510 MM1669 2N3563 REPLACEMENT
    Contextual Info: cross reference liste d'équivalence THOMSON-CSF THOMSON-CSF pro d u ct line for RF pow er tran sisto rs has su cce ssfully cross referenced m any co m p e titive tran sisto r products. In m ost cases, these replacem ent tran sisto rs d ire ctly replace the co m p e titive pa rts for DC and RF p a ram eters in a ctu al operating system s. It is possible,


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    bam202n5642b25-122n6082+162n6084msc2304th2304pt8809sd11342n5689pt8811pt8740transistor pt4544pt8828rf transistor s10-122n6095sd1076mrf510mm16692n3563 replacement PDF

    Contextual Info: Micmsemi m m m RF Products a Progress Powered by Technology 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS VHF COMMUNICATIONS Features • • • DESIGNED FOR VHF MILITARY AND COMMERCIAL


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    sd1127msc0936 PDF

    LM1011N

    Abstract: JRC386D X0238CE UA78GKC M51725L MJ13005 AN6677 HA11749 MN8303 sn76131n
    Contextual Info: TCG/NTE/ECG To JEDEC and Japanese ECG/TCG/NTE ECG10 ECG11 ECG12 ECG13 ECG14 ECG15 ECG16 ECG17 ECG18 ECG19 ECG20 ECG21 ECG22 ECG23 ECG24 ECG25 ECG26 ECG27 ECG28 ECG29 ECG30 ECG31 ECG32 ECG33 ECG34 ECG35 ECG36 ECG37 ECG38 ECG39 ECG40 ECG41 ECG42 ECG43 ECG44


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    ecg10ecg11ecg12ecg13+16ecg14ecg15ecg16ecg17ecg18ecg19lm1011njrc386dx0238ceua78gkcm51725lmj13005an6677ha11749mn8303sn76131n PDF

    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


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    1phx11136q-14mhw721a213001 s 6d transistoratv5030* motorola+72n5591 motorola13001 6d transistorbgy41mhw710-1construction linear amplifier 2sc19457119 amperexbf503 PDF