MS1649 Search Results

MS1649

Contextual Info: MS1649 RF & MICROWAVE TRANSISTORS UHF CLASS C MOBILE APPLICATIONS Features • • • • 470 MHz POUT = 3W GP = 9.5dB MINIMUM COMMON EMITTER CONFIGURATION 1. Collector 2. Base 3. Emitter DESCRIPTION: TO-39 The MS1649 is a 12.5V epitaxial NPN planar transistor

7107 ic

Abstract: 7107 7107 datasheet 7107 GP IC 7107 MS1649
Contextual Info: MS1649 RF & MICROWAVE TRANSISTORS UHF CLASS C MOBILE APPLICATIONS Features • • • • 470 MHz POUT = 3W GP = 9.5dB MINIMUM COMMON EMITTER CONFIGURATION 1. Emitter 2. Base 3. Collector DESCRIPTION: TO-39 The MS1649 is a 12.5V epitaxial NPN planar transistor

MS1649

Abstract: 205AD
Contextual Info: MS1649 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MS1649 is Designed for UHF large signal, FM Land Mobile Applications. PACKAGE STYLE TO 205AD FEATURES: MILLIMETERS • Grounded Emitter • PG = 9.5 dB at 3.0 W/470 MHz • Omnigold Metalization System

MS1649

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1649 RF & MICROWAVE TRANSISTORS UHF CLASS C MOBILE APPLICATIONS Features • • • • 470 MHz POUT = 3W GP = 9.5dB MINIMUM COMMON EMITTER CONFIGURATION 1. Emitter

Contextual Info: MS1649 RF & MICROWAVE TRANSISTORS UHF CLASS C MOBILE APPLICATIONS Features • • • • 470 MHz POUT = 3W GP = 9.5dB MINIMUM COMMON EMITTER CONFIGURATION 1. Emitter 2. Base 3. Collector DESCRIPTION: TO-39 The MS1649 is a 12.5V epitaxial NPN planar transistor

Contextual Info: MS1649 RF & MICROWAVE TRANSISTORS UHF CLASS C MOBILE APPLICATIONS Features • • • • 470 MHz POUT = 3W GP = 9.5dB MINIMUM COMMON EMITTER CONFIGURATION 1. Collector 2. Base 3. Emitter DESCRIPTION: TO-39 The MS1649 is a 12.5V epitaxial NPN planar transistor

mce544

Abstract: bfr96 equivalent MC3042 Bipolar Transistor y 200Mhz MRF237 / SD1127 MC1343 MCE545 transistor 5ghz pnp MC1309 MRF630
Contextual Info: MC3042 WAFFLE PACK DIE RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MC3042 is a high gain, discrete silicon bipolar transistor, shipped in waffle pack. ! 1Watt Output Power @ 400MHz ! Gold Back Metal IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

PNP 2GHz LNA

Abstract: mce544 bfr96 equivalent TRANSISTOR NPN 5GHz TRANSISTOR PNP 5GHz MC1333 ms1649 MCE545 transistor 5ghz pnp MRF630
Contextual Info: MC1333 WAFFLE PACK DIE RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MC1333 is a low noise, high gain, discrete silicon bipolar transistor, shipped in waffle pack. ! Low noise-2.5dB@500MHz ! Gold Back Metal IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

bfr96 equivalent

Abstract: MCE544 bfr96 equivalent TRANSISTORS MC1343 transistor equivalent bfr96 2N5031 equivalent TRANSISTOR PNP 5GHz MRF630 MRF544 microsemi MRF237
Contextual Info: MCE545 WAFFLE PACK DIE RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MCE545 is a high breakdown, high gain, discrete PNP silicon bipolar transistor, shipped in waffle pack. ! High Breakdown BVCEO = 70V ! Gold Back Metal

Contextual Info: [AP4400A] AP4400A Ultra Low Power Voltage Detector 1. Genaral Description The AP4400A is ultra-low power consumption and high-precision IC for voltage detection. Its consumption current is extremely low and is only 20nA typically @3.3 V, detecting voltage . Since its consumption current

LE79Q2281

Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
Contextual Info: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security

Contextual Info: [AP4400A] AP4400A Ultra Low Power Voltage Detector 1. Genaral Description The AP4400A is ultra-low power consumption and high-precision IC for voltage detection. Its consumption current is extremely low and is only 20nA typically @3.3 V, detecting voltage . Since its consumption current

Contextual Info: [AP4400A] AP4400AEMXX Ultra Low Power Voltage Detector 1. 概 要 AP4400A シリーズ は超低消費電流を特長とした高精度CMOS電源電圧検出ICです。消費電流は20 nA typ（ @ 3.3V 検出電圧 ）と極めて低く抑えられています。出力はCMOS出力で従来のCMOS電源電圧検

MG1007-42

Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
Contextual Info: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are

bfr96 equivalent

Abstract: MCE544 MC1343 TRANSISTOR PNP 5GHz transistor 5ghz pnp MC1333 Transistor MRF237 MRF544 microsemi MRF237 5GHz PNP transistor
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF544 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, high Frequency, high breakdown, To-39 packaged, Transistor • Maximum Unilateral Gain = 13.5 dB (typ) @ f = 200 MHz