2SC4837 Search Results

Contextual Info: Ordering number:ENN4135 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1855/2SC4837 50V/4A Switching Applications Applications Package Dimensions • Power supplies, relay drivers, lamp drivers. unit:mm 2084B Features [2SA1855/2SC4837] 4.5 · Adoption of FBET and MBIT processes.

Contextual Info: Ordering number:ENN4135 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1855/2SC4837 50V/4A Switching Applications Applications Package Dimensions • Power supplies, relay drivers, lamp drivers. unit:mm 2084B Features [2SA1855/2SC4837] · Adoption of FBET and MBIT processes.

T523

Abstract: EN4135 2SA1855 2SC483
Contextual Info: O rdering num ber: EN413S 2SA1855/2SC4837 No.4135 SAiYO PNP/NPN Epitaxial P lanar Silicon Transistors i 50V/4A Switing Applications A p p licatio n s •Power supplies, relay drivers, lamp drivers. F e a tu re s • Adoption of FBET and MBIT processes. • Large allowable collector dissipation.

Contextual Info: Ordering number:ENN4135 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1855/2SC4837 50V/4A Switching Applications Applications Package Dimensions • Power supplies, relay drivers, lamp drivers. unit:mm 2084B Features [2SA1855/2SC4837] · Adoption of FBET and MBIT processes.

2SA1855

Abstract: EN4135
Contextual Info: Ordering number:EN4135 PNP/NPN Epitaxial Planar Silicon Transistor 2SA1855/2SC4837 50V/4A Switching Applications Applications Package Dimensions • Power supplies, relay drivers, lamp drivers. unit:mm 2084B Features [2SA1855/2SC4837] · Adoption of FBET and MBIT processes.

24837

Abstract: 2SA1855 2SC4837
Contextual Info: Ordering number: EN4135 2SA1855/2SC4837 No.4135 PN P/N PN E pitaxial P lan ar Silicon T ransistors SANYO i 50V/4A Switing Applications A p p lic a tio n s • Power supplies, relay drivers, lam p drivers. F e a tu r e s • Adoption of FBET and MBIT processes.

2SC483

Abstract: 2SA1855 2SC4837
Contextual Info: Ordering number:ENN4135 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1855/2SC4837 50V/4A Switching Applications Applications Package Dimensions • Power supplies, relay drivers, lamp drivers. unit:mm 2084B Features [2SA1855/2SC4837] · Adoption of FBET and MBIT processes.

2SB1205

Abstract: 2SB1143 2sc4675
Contextual Info: SAfÊYO LOW-SATURATI ON VOLTAGE TR SERI ES Small-Signal Transistors. NO. 2 (*)MBIT process technology "New manufacturing method,Multi Base Island Transistors” For PNP, (-) sign is omitted. *:Tc=25’C. #:Contains base to emitter resistance(RBE). Type No.

2SB1267

Contextual Info: Continued from previous page Absolute maximum ratings Type No. Package type Electrical characteristics Ta = 25 "C VCB(sat) max @ 1C •IB Applications VCBO (V) VCEO to (V) (A) PC (W ) (2 ) VCE(sat) fr @ Vce hre @ V C E lC max (mV) 1C (A) (mA) te hFE XSF

2SC4872

Abstract: 2SC4837 2SC4853 2SC4854 2SC4855 2SC4856 2SC4857 2SC4858 2SC4859 2SC4860
Contextual Info: - 216 - W. Ä T a = 2 5 ^ , * £ P iâ T c = 2 5 T î WH 2SC 4837 2SC4853 2SC4854 2SC4855 2SC4856 2SC4857 2SC4858 2SC4859 2SC4860 2SC4861 2SC4862 2SC4863 2SC4864 2SC4865 2SC4866 2SC4867 2SC4868 2SC4869 2SC4870 2SC4872 2SC4873 2SC4884 2SC4885 2SC4890 2SC4891

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

2SB1205

Abstract: 2SD1801
Contextual Info: SAfiYO L O W - S A T U R A T IO N V O L T A G E TR S E R I E S Small-Signal Transistors.NO. 1 The low-saturation voltage TR series, being excellent in VCE(sat) and switching characteristic at high current, are suited for use in inverters, converters, power amplifiers, electrical equipment.

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

2SB1205

Abstract: 2S81119 2Sk222 2sa128
Contextual Info: Low-Noise Transistors Absolute maximum ratings Device Package type Application VcBO V VCEO (V) Ve BO (V) Iç (mA) Pc (mW) rical characteristics (Ta = 25 deg. C) hFE @ V c E 'lc T| (deg. C) I c b o max fiiA l <T @ Vcc * Ic Vcs (V) &FE VCE (V) lc (mA) Vcf

C3293

Abstract: D1804 c3807 C3953 C3502 C3467 d1815 B985 B1166 c3950
Contextual Info: SA0YO N e w P a c k a g e FLP Full M o l d L a r ge P a c k a g e S e r i e s Sanyo hasdeveloped FLP (Full Mold Large Package) to meet the needs of miniaturization and automatic insertion in themidst of progressingindustrial and consumer electronics. Though it is a large power type with Pc=1.5ff, it is achieved that

2sc5694

Abstract: TO-126LP 2sd1683 2SC5607 2sa1770 2SA2023 2SA2203 sanyo, 2sa2039 2sa2039 2SC5707
Contextual Info: Low-Saturation Voltage Transistors Shortform Table Lead Type Package Series CONTENTS • ■ ■ ■ ■ ・ ・ ・ ・ ・ ・ ・ Packages Quiｃｋ selection guide Road Map Application Example Lineup according to packages SPA NP NMP MP TP FLP

Contextual Info: HN4G01J TOSHIBA Multi Chip Discrece Device HN4G01J Audio Frequency General Purpose Amplifier Applications Unit: mm Q1 z Small package Dual type z High voltage and high current : VCEO = 50V, IC = 150mA (max) z High hFE : hFE = 120~400 z Excellent hFE linearity

HN4G01J

Abstract: RN1103F
Contextual Info: HN4G01J TOSHIBA Multi Chip Discrece Device HN4G01J Unit: mm Audio Frequency General Purpose Amplifier Applications Q1 Small package Dual type High voltage and high current : VCEO = 50V, IC = 150mA (max) High hFE : hFE = 120~400 Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.)

HN4G01J

Abstract: RN1103F
Contextual Info: HN4G01J TOSHIBA Multi Chip Discrece Device HN4G01J Audio Frequency General Purpose Amplifier Applications Unit: mm Q1 z Small package Dual type z High voltage and high current : VCEO = 50V, IC = 150mA (max) z High hFE : hFE = 120~400 z Excellent hFE linearity