2SC343 Search Results

2SC3437

Contextual Info: 2SC3437 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3437 ○ 超高速度スイッチング用 ○ 電子計算機用, カウンタ用 単位: mm • トランジション周波数が高い。 : fT = 400 MHz (標準) •

Contextual Info: TO SH IB A 2SC3437 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3437 U nit in mm ULTRA HIGH SPEED SWITCHING APPLICATIONS COMPUTER, COUNTER APPLICATIONS • • • High Transition Frequency Low Saturation Voltage High Speed Switching Time

2SC3437

Contextual Info: TO SH IBA 2SC3437 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3437 Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATIONS COMPUTER, COUNTER APPLICATIONS • • • + 0.5 2 .5 -0 .3 High Transition Frequency frp= 400MHz (Typ.) Low Saturation Voltage

Contextual Info: SMD Type Product specification 2SA1368 Features High Voltage VCEO = -100V High Collector Current ICM = -800mA High Collector Dissipation PC = 500mW Small Package For Mounting Complementary to 2SC3438 Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-Base Voltage

Contextual Info: SMD Type Product specification 2SA1369 Features High Collector Current ICM = -3A, IC = -1.5A High Collector Dissipation PC = 500mW Small Package For Mounting Complementary to 2SC3439 Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-Base Voltage

2SA1369

Abstract: G marking smd transistor 1A 9 g400h smd transistor 2sc3439 transistor smd marking H 2SC3439 SMD BR BR SMD IC 2SC3439 1a
Contextual Info: Transistors SMD Type Plunger Drive Applications 2SA1369 Features High Collector Current ICM = -3A, IC = -1.5A High Collector Dissipation PC = 500mW Small Package For Mounting Complementary to 2SC3439 Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-Base Voltage

Contextual Info: 2SC3435 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)500 I(C) Max. (A)15 Absolute Max. Power Diss. (W)120 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

SMD BR

Abstract: 2sc3438 2sc343 2SA1368 smd b_r
Contextual Info: Transistors SMD Type High Voltage Drive Applications 2SA1368 Features High Voltage VCEO = -100V High Collector Current ICM = -800mA High Collector Dissipation PC = 500mW Small Package For Mounting Complementary to 2SC3438 Absolute Maximum Ratings Ta = 25

2SC343

Abstract: 2SC3437 HIGH SPEED SWITCHING NPN SOT23
Contextual Info: Transistors IC SMD Type Silicon NPN Epitaxial 2SC3437 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 High speed switching time: tstg = 15 ns typ . 0.55 Low saturation voltage: VCE (sat) = 0.3 V (max). +0.1 1.3-0.1 +0.1 2.4-0.1 High transition frequency: fT = 400 MHz (typ).

Contextual Info: SILICON NPN EPITAXIAL TYPE 2SC3437 U ni t i n mm + 0.5 2.5 - 0.3 ULTRA HIGH SPEED SWITCHING APPLICATIONS. COMPUTER, COUNTER APPLICATIONS. • High T r a n s i t i o n F requency • Low S a t u r a t i o n V o l ta g e • High Speed S w it c h i n g Time

2SC3437

Contextual Info: 2SC3437 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3437 Ultra High Speed Switching Applications Computer, Counter Applications • High transition frequency: fT = 400 MHz (typ.) • Low saturation voltage: VCE (sat) = 0.3 V (max) • High speed switching time: tstg = 15 ns (typ.)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SC3437 TRANSISTOR NPN SOT–23 FEATURES  High Transition Frequency  Low Saturation Voltage MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter

2SC3437

Abstract: 42kO
Contextual Info: TOSHIBA 2SC3437 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3437 Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATIONS COMPUTER, COUNTER APPLICATIONS • • • + 0.5 High Transition Frequency frp= 400MHz (Typ.) Low Saturation Voltage v CE(sat) = °-3V (Max.)

2SC3439 1a

Abstract: 02n transistor 2SC3439 15A transistor
Contextual Info: MITSUBISHI SEMICONDUCTOR <SMALL-SIGNAL TRANSISTOR 2SC3439 FOR SMALL TYPE MOTOR PLUNGER DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC3439 is a silicon NPN epitaxial type transistor designed with high OUTLINE DRAWING Uni, mm collector dissipation,high collector current, high hFE.

D1647

Abstract: sd 1651 2SD1651 2SD1834 2SD1930 2SC3439 2SC3616 d1651 2SD689 2SD1645
Contextual Info: - 246 - £ m *t % Marmi. T ype No. 2SD 1621 ^ H n e SANYO * M £ T O SHIBA □ P 'Ss m. NEC 2SD1898 2SC4357 2SC4672 2SD2403 2SD1119 2SC3438 2SD1834 ¥ 2SC2873 2SD 1624 / ¥ 2SC4541 2SD 1625 $ ^ 2SD 1631 2SD 1632 2SD 1633 ^ 2SD 1634 2SD 1636 2S0 1637 2SD1368

transistors marking HJ

Abstract: SMD BR 17 smd transistor marking hg smd transistor 1800 HG marking smd transistor 2sc3439 2SC3439 marking H-G hFE CLASSIFICATION Marking markING HG
Contextual Info: Transistors SMD Type Small Signal Transistor 2SC3439 Features High hFE=400 to 1800. High collector current Icm=3A,Ic=1.5A High collector dissipation Pc=500mW Low VCE(sat) VCE(sat)=0.2V typ(@Ic=1a,IB=20mA) Small package for mounting. Absolute Maximum Ratings Ta = 25

2SC3445

Abstract: 2SC3432 2SA1371 2SC3435 2sc3468 2SC3434 2SC3437 2SC3438 2SC3439 2SC3440
Contextual Info: - - 158 m Ta=25°C, *Ep(áTc=25<C > m *± % m % & (V (V) IC (D C ) Pe Pe* (A) (W) (W) Ic (A) Ib (A) 1.5 3 10 100 100 400 10 60 5 i 1 1.5 5 1 15 120 100 400 10 60 5 1.5 1 1.5 7.5 1.5 1 HV HS PSW 500 400 2SC3435 s n HV HS PSW 500 400 G PD (V) 1 B U 2SC3440

40w amplifier

Abstract: 2sc3438 mitsubishi vcb 25M SC-62
Contextual Info: MITSUBISHI SEMICONDUCTOR {SMALL-SIGNAL TRANSISTOR 2SC3438 FOR HIGH VOLTAGE DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC3438 is a silicon NPN epitaxial type transistor designed for OUTLINE DRAWING unit mm power supply, 20 to 40W output low frequency power amplifier drive application.

2SC3437

Contextual Info: 2SC3437 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3437 Ultra High Speed Switching Applications Computer, Counter Applications • High transition frequency: fT = 400 MHz (typ.) • Low saturation voltage: VCE (sat) = 0.3 V (max) • High speed switching time: tstg = 15 ns (typ.)

2SC3437

Abstract: transistor marking c y
Contextual Info: 2SC3437 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3437 Ultra High Speed Switching Applications Computer, Counter Applications • High transition frequency: fT = 400 MHz (typ.) · Low saturation voltage: VCE (sat) = 0.3 V (max) · High speed switching time: tstg = 15 ns (typ.)

Contextual Info: 2SC3434 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)500 I(C) Max. (A)10 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SC3340

Abstract: 2SA1324 2SC3339 2SC3426
Contextual Info: —3 10. SUPER MINI PACKAGE SERIES TO-236 MOD./SOT-23 MOD. C/i 1 H CD 3» rS M H n > TRANSISTOR << •c PC (V) (mA) (mW) 50 150 150 70 -700/400 6 V CE (V) >C (mA) (V) •c (mA) >B (mA) (MHz) 0.25/0.3 100 10 (80) NPN l General Purpose 2SC2712 ! High Voltage

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.