2SC2367
Abstract: Transistor General Purpose Transistor
Contextual Info: 2SC2367 NPN SILICON HI FREQUNCY TRANSISTOR DESCRIPTION: The ASI 2SC2367 is Designed for general purpose and small signal amplifier and oscillator applications up to 6.0 GHz. PACKAGE STYLE .100 4L PILL FEATURES INCLUDE: • High frequency 8.0 GH Low noise, 1 dB at 0.5 GHz.
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2sc2367transistor general purpose transistor |
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2SC2407A
Abstract: 2SC2348 2SC2366 2SC2407 2-10H1A 2SC2381 2sc2373 2SC2388 2SC2395 2SC2349
Contextual Info: - 122 - m % ft £ iÉ M X Ë fà 11 V 2SC2348 m s VHF RF 2SC2349 jícs 2SC2351 s 2SC2352 2SC2353 2SC2356 2SC2359 2 S C 2 3 6 0 (H) 2SC2362 2SC2362K 2SC2366 2SC2367 2SC2368 2SC2369 2SC2371 2SC2373 n BW. BM Ü±Ü siriË m H# 3$ â± Ü BM BM BM BU BM 2SC2377
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2sc23482sc23492sc23512sc2352+142sc23532sc23562sc23592sc23602sc23622sc2362k2sc2407a2sc23662sc24072-10h1a2sc23812sc23732sc23882sc2395
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2SC3355 SPICE MODEL
Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
Contextual Info: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness
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f2002f2003f20042sc3355 spice model+9transistor c2003c319bmgf1412rf transistor 10ghzmrf134 rf model .lib file2sk571mgf1402mrf9331pb_hp_at41411_19921101
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NE21936
Abstract: NE21935 equivalent 2SC2367 NE219 NE21900 2SC2869 nec 2sc2218 NE21903 NE21937 2SC22174
Contextual Info: NE C/ CALI FORNI A 1SE D NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES / • LOW NOISE: 1 dB at 0.5 GHz 2.2 dB at 2 GHz ' NE219 SERIES The NE219 series of NPN silicon bipolar transistors is de signed for small signal amplifier and oscillator applications up
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qg013t3r-31-ne219ne21936+8ne21935 equivalent2sc2367ne219002sc2869nec 2sc2218ne21903ne219372sc22174
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MHW721A2
Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA
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1phx11136q-14mhw721a213001 s 6d transistoratv5030* motorola+72n5591 motorola13001 6d transistorbgy41mhw710-1construction linear amplifier 2sc19457119 amperexbf503
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2SC2217
Abstract: 2SC2367 NE21935 Ic 9148
Contextual Info: NEC" NE21900 NE21903 NE21908 NE21935 NPN SILICON HIGH FREQUENCY TRANSISTOR NOT RECOMMENDED FOR NEW DESIGN FEATURES_ DESCRIPTION • HIGH fT: 8 GHz The NE219 series of NPN silicon bipolar transistors is designedtor small signal amplifiers and oscillator applications up
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ne21900ne21903ne21908ne21935+7ne219s12s21e21903e219082sc22172sc2367ic 9148
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2SC1223
Abstract: 2SC2150 2SC2367 NEC NE "micro x" d 2SC2585 2SC3604 NEC NE "micro x" 2SC2148 NE AND micro-X 2SC2149
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm noise amplification at 1.0 to 6.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and
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2sc36042sc12232sc21502sc2367+6nec ne "micro x" d2sc2585nec ne "micro x2sc2148ne and micro-x2sc2149
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2SB415
Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
Contextual Info: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~
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4000h2sb4152sb 7102sc1061+72sd5242sb504hd68p012sb5072sa7622sc8272sc1362
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711
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NE56755
Abstract: BFR96S HXTR4105 LT3203 HXTR3615 NE21960 j200 Avantek S MA42141 2sc240s
Contextual Info: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Manufacturer Po Max W Gp V(BR)CBO (V) Po N.F. at. MatI. Toper Max °C (W) Package Style UHFIMicrowave Transistors, Bipolar NPN (Co nt' d) 5 10 15 20 25 30 35 40 45 50 BFQ73S BFR96 AT41435-5 AT420S5 AT414S5
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bfq73sbfr96at41435-5at420s5+16at414s5at41435-3at41470at41410ne9s203ne9s20sne56755bfr96shxtr4105lt3203hxtr3615ne21960j200avantek sma421412sc240s
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BF907
Abstract: BF900 BF910 BF914 BF479S Siemens BF479T NE56755 BF540 BFQ14
Contextual Info: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Manufacturer Po Max W Gp V(BR)CBO (V) Po N.F. at. MatI. Toper Max °C (W) Package Style UHFIMicrowave Transistors, Bipolar NPN (Co nt' d) 5 10 15 20 25 30 35 40 45 50 BFQ73S BFR96 AT41435-5 AT420S5 AT414S5
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bfq73sbfr96at41435-5at420s5+16at414s5at41435-3at41470at41410ne9s203ne9s20sbf907bf900bf910bf914bf479ssiemensbf479tne56755bf540bfq14
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NEC K 2500
Abstract: N transistor NEC K 2500 2SC1223 transistor marking S00 2SC3604 2SC2367 NEC marking b NEC PART NUMBER MARKING 2SC3603 2SC2150
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm The 2SC3604 is an NPN epitaxial transistor designed for lownoise amplification at 1.0 to 6.0 GHz. This transistor has low-noise
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2sc360415obotsnec k 2500n transistor nec k 2500+72sc1223transistor marking s002sc2367nec marking bnec part number marking2sc36032sc2150
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NT 407 F TRANSISTOR
Abstract: 2SC2150 2SC2585 2SC2367 NE AND micro-X NEC NE "micro x" 2SC1223 2SC3604 2SC2148 2SC2149
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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nt 407 f transistor2sc21502sc25852sc2367+6ne and micro-xnec ne "micro x2sc12232sc36042sc21482sc2149
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