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NE710 Datasheets (11)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
NE710		NEC	LOW NOISE Ku-K BAND GaAs MESFET	Scan	PDF	286.09KB	7
NE71000		NEC	90 GHz, low noise Ku-K band GaAs MESFET	Scan	PDF	286.09KB	7
NE71-0.2		SIPAT	GSM Repeater	Original	PDF	50.01KB	1
NE71-02		SIPAT	GSM Repeater	Original	PDF	50.02KB	1
NE71083		NEC	90 GHz, low noise Ku-K band GaAs MESFET	Scan	PDF	286.09KB	7
NE71083-06		NEC	90 GHz, low noise Ku-K band GaAs MESFET	Scan	PDF	286.09KB	7
NE71083-07		NEC	90 GHz, low noise Ku-K band GaAs MESFET	Scan	PDF	286.09KB	7
NE71083-08		NEC	90 GHz, low noise Ku-K band GaAs MESFET	Scan	PDF	286.09KB	7
NE71084		NEC	90 GHz, low noise Ku-K band GaAs MESFET	Scan	PDF	286.09KB	7
NE71084-06		NEC	90 GHz, low noise Ku-K band GaAs MESFET	Scan	PDF	286.09KB	7
NE71084-08		NEC	90 GHz, low noise Ku-K band GaAs MESFET	Scan	PDF	286.09KB	7

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NEC Electronics Group NE71000N
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	NE71000N		1,220			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	NE71000N		976			1 $22.50 10 $22.50 100 $22.50 1000 $15.00 10000 $15.00	Buy Now
NEC Electronics Group NE71000M
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	NE71000M		836			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	NE71000M		668			1 $49.68 10 $49.68 100 $49.68 1000 $37.26 10000 $37.26	Buy Now
NEC Electronics Group NE71000L
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	NE71000L		74			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	NE71000L		59			1 $32.00 10 $32.00 100 $27.20 1000 $27.20 10000 $27.20	Buy Now
LUMEL SA EP27NE7100000 Voltmeter; on panel; VAC: 0÷250kV; Class: 1.5; True RMS; Umax: 300V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	EP27NE7100000		1		1	1 $41.66 10 $38.68 100 $38.68 1000 $38.68 10000 $38.68	Buy Now
LUMEL SA EA19N E71000000008 Voltmeter; on panel; VAC: 0÷250kV; 40÷72Hz; Length: 97mm; 96x96mm
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	EA19N E71000000008				1	1 $28.27 10 $26.80 100 $26.80 1000 $26.80 10000 $26.80	Get Quote

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NE710 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SK609 Contextual Info: NEC NE710 SERIES LOW NOISE Ku-K BAND GaAs FET NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES VERY HIGH m ax :90 GHz LOW NOISE FIGURE m T3 HIGH ASSOCIATED GAIN Lg = 0 .3 nm , W g = 2 8 0 jxm N+ CONTACT LAYER (Triple Epitaxial Technology PROVEN RELIABILITY AND STABILITY	OCR Scan	ne710 ne71000 e71083 e71084 +4b4275e5 ne71000l ne71000m 2sk609	PDF
2SK609 Abstract: NE71084 NE71000M Contextual Info: NE710 SERIES LOW NOISE Ku-K BAND GaAs FET NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES VERY HIGH fMAX: 90 GHz LOW NOISE FIGURE HIGH ASSOCIATED GAIN Lg s 0 .3 pm, Wg = 280 CD TJ o u. z jun N+ CONTACT LAYER Triple Epitaxial Technology O c S O 3 05	OCR Scan	ne710 e71000 e71083 app48 +6ne71000 ne71000l ne71000m ne71000n 2sk609 ne71084	PDF
ne71084 Abstract: 2SK609 2SK406 NE71000 NE710-00 Contextual Info: LOW NOISE Ku-K BAND GaAs FET NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES VERY HIGH fM A x : NE710 SERIES 90 GHz LOW NOISE FIGURE m T3 HIGH ASSOCIATED GAIN Lg = 0.3 iin, Wg = 280 jrni CO T> N+ CONTACT LAYER Triple Epitaxial Technology) PROVEN RELIABILITY AND STABILITY	OCR Scan	ne710 ne71000 ne71000l ne71000m +6ne71000n 84-sl ne71084 2sk609 2sk406 ne710-00	PDF
2SK609 Abstract: 2SK609-06 2sk4060 IS22I2 NE701 NE71084 2SK6090 2SK406 NE71000 2SK406-08 Contextual Info: 1SE D E C/ C A L I F O R N I A NEC b427 414 0 Q D l b 2 7 B LOW NOISE Ku-K BAND GaAs MESFET NE710 SERIES FEATURES DESCRIPTION AND APPLICATIONS • VERY HIGH fMAX: 90 GHz The NE710 series features a low noise figure and high associ ated gain thru K-band by employing a recessed 0.3 micron	OCR Scan	0qdlb27 ne710 ne71000 2sk609 +82sk609-06 2sk4060 is22i2 ne701 ne71084 2sk6090 2sk406 2sk406-08	PDF
NE71000 Abstract: 2SK609 NE71084 NE71083 2SK60 NE7100 2sk406 NE710 Z168 NE710-00 Contextual Info: NE710 SERIES LOW NOISE Ku-K BAND GaAs FET N O IS E F IG U R E & A S S O C IA TE D G A IN V«. F R EQ U EN C Y V w = 3 V, lo s s 1 0 m A FEATU R ES VE R Y HIG H fuax: 9 0 G Hz LO W N O IS E F IG U R E \ HIG H A S S O C IA T E D G AIN Lo 3 0 .3 \ s . W o s 280	OCR Scan	ne710 ne71000 ne71083 ne71084 +9rn/50 z-140 z-112 2sk609 2sk60 ne7100 2sk406 z168 ne710-00	PDF
2SC3355 SPICE MODEL Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101 Contextual Info: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness	Original	f2002 f2003 f2004 2sc3355 spice model +9transistor c2003 c319b mgf1412 rf transistor 10ghz mrf134 rf model .lib file 2sk571 mgf1402 mrf9331 pb_hp_at41411_19921101	PDF
SVI 3104 c Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720 Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or	OCR Scan	an83301-1 ne24615 an83302 an83303-1 +16ne71083 ne70083 an83901 an85301 11/86-ln an86104 svi 3104 c upc1678g ne333 stb 1277 transistor equivalent transistor bf 175 ne85635 packaging schematic ne72000 vc svi 3104 ne9000 ne720	PDF
NEC71000 Abstract: NEC710 MWT-7 Contextual Info: TECHNICAL NOTE DEV101 M ic r o W a v e T echno lo g y REPLACEMENT OF NEC710 GaAs FET CHIPS WITH THE MwT-7 The MwT-7 0.25 micron gate length MESFET chip is designed for low-noise figure with high associated gain and is ideal for broad-band or narrow-band balanced amplifier	OCR Scan	dev101 nec710 nec71000 6-18ghz +1mwt-7	PDF
2SK2500 Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861 Contextual Info: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose	Original	2sk2500 2sk1543 upd16861gs nec 2sk2500 +6upa1559h transistor nec 2sk2500 2sc4496a mc10087f1 2sa733a upd16861	PDF
NE800296 Abstract: diode deg avalanche zo 150 63 NE72089 ne8002 SK3448 universal jfet biasing curve graph gunn diode ghz s-parameter NE800196 impatt diode NE800495-4 Contextual Info: California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs FETs INTRODUCTION The history of converting microwave communications, as well as other communications technologies, to solid state electronics is a long one. Early advances were first made in	Original	an82901-1 24-hour ne800296 diode deg avalanche zo 150 63 +8ne72089 ne8002 sk3448 universal jfet biasing curve graph gunn diode ghz s-parameter ne800196 impatt diode ne800495-4	PDF
NE70083 Abstract: NE372800 AN83901 NE372 NE71083 Matching Transformer - line matching transformed AN-PF-1007 Contextual Info: California Eastern Laboratories AN-PF-1007 APPLICATION NOTE Designing High Power GaAs FET Amplifiers Using Single Cell FET Parameters INTRODUCTION Many different power GaAs FET die types are available from NEC. With the recent development of the NE430, NE345L,	Original	an-pf-1007 ne430 ne345l ne372 +624-hour ne70083 ne372800 an83901 ne71083 matching transformer - line matching transformed	PDF
NE1069L-4B Abstract: NE710 Contextual Info: NEC/ CALIFORNIA t4S741M 1SE D NEC r-37'?0 00DlSb3 2 4W, L-S BAND POWER GaAs MESFET NE1069L-4B OUTLINE DIMENSIONS Units in mm FEATURES • CLASS A OPERATION OUTLINE T-38 • HIGH POWER OUTPUT • HIGH GAIN • HIGH POWER ADDED EFFICIENCY • HIGH RELIABILITY	OCR Scan	00dlsb3 ne1069l-4b b4s7414 00g15b4 +1ne710	PDF
ne71084 Abstract: NE76084 NE71000 NE32684A NE67383 NE72000 NE32584 ne72089 Contextual Info: Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs 1.0 to 40 12 2.0 10 0.6 11.0 2.0 20 11.0 00 Chip C or B 1-5 200 1.OtO 40 12 2.0 10 0.6 11.0 2-0 20 11.0 oo Chip D 1-22 280 0.1 to 18 12 2.0 10 0.75 10.5 2.0 20 12.0 00 Chip 0.3 2« 0.1 to 18 12 3.0	OCR Scan	ne24200 ne32400 ne33200 ne67300 +12ne71000 ne76000 ne76100 ne24283b ne67383 ne71083 ne71084 ne76084 ne32684a ne72000 ne32584 ne72089	PDF
ne71084 Abstract: GaAs MESFET NE25139 NE4200 NE32684A NE71000 71083 ne72089 NE72000 MESFET Application Contextual Info: Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs Typical Spécifications @ Ta * ZS'C ftffiW M M R M Bat* Part Humber Test Frequency Gita LeagM Width f Range \| Frequency C6HZ Min) Pows Bias NF/Gi Bias Available Vos Ids HFow 6* Vds Ids PliB Package	OCR Scan	s3200 ne87300 ne76000 ne24283b +10ne71084 gaas mesfet ne25139 ne4200 ne32684a ne71000 71083 ne72089 ne72000 mesfet application	PDF

NE800296 Abstract: NE800196 NE24406 diode deg avalanche zo 150 63 SK3448 ne8002 NE868199 shockley diode NE800495-4 shockley diode application Contextual Info: California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs FETs 9/82 INTRODUCTION The history of converting microwave communications, as well as other communications technologies, to solid state electronics is a long one. Early advances were first made in	Original	an82901-1 ne800296 ne800196 ne24406 +7diode deg avalanche zo 150 63 sk3448 ne8002 ne868199 shockley diode ne800495-4 shockley diode application	PDF
NE70083 Abstract: NE372 planar transformer theory small signal GaAs FET x-band microwave fet NE71083 DLI-1988-1 Contextual Info: California Eastern Laboratories AN-PF-1007 APPLICATION NOTE Designing High Power GaAs FET Amplifiers Using Single Cell FET Parameters INTRODUCTION Many different power GaAs FET die types are available from NEC. With the recent development of the NE430, NE345L,	Original	an-pf-1007 ne430 ne345l ne372 +6ne70083 planar transformer theory small signal gaas fet x-band microwave fet ne71083 dli-1988-1	PDF
c5088 transistor Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154	Original	1853impatt c5088 transistor transistor c3207 tlo84cn +7sec c5088 in5355b d2817a c3207 transistor toshiba f630 tlo81cp mc74hc533n	PDF
NEC710 Abstract: NEC71000 DEV101 REF12 MWT-7 MWT-7 MICROWAVE Contextual Info: TECHNICAL NOTE DEV101 M ic r o W a v e T e c h n o lo g y REPLACEMENT OF NEC710 GaAs FET CHIPS WITH THE MwT-7 The MwT-7 0.25 micron gate length MESFET chip is designed for iow-noise figure with high associated gain and is ideal for broad-band or narrow-band balanced amplifier	OCR Scan	dev101 nec710 nec71000 0000ghz +65000ghz 000ghz 6-18ghz ref12 mwt-7 mwt-7 microwave	PDF