DEV101 Search Results

NEC71000

Abstract: NEC710 MWT-7
Contextual Info: TECHNICAL NOTE DEV101 M ic r o W a v e T echno lo g y REPLACEMENT OF NEC710 GaAs FET CHIPS WITH THE MwT-7 The MwT-7 0.25 micron gate length MESFET chip is designed for low-noise figure with high associated gain and is ideal for broad-band or narrow-band balanced amplifier

NEC710

Abstract: NEC71000 DEV101 REF12 MWT-7 MWT-7 MICROWAVE
Contextual Info: TECHNICAL NOTE DEV101 M ic r o W a v e T e c h n o lo g y REPLACEMENT OF NEC710 GaAs FET CHIPS WITH THE MwT-7 The MwT-7 0.25 micron gate length MESFET chip is designed for iow-noise figure with high associated gain and is ideal for broad-band or narrow-band balanced amplifier

KPL 3009

Abstract: diode 1N30 jtp 87 TL 8H3 PDI 45A pj 75 sx 34 ANI 1015 l8510 cv zxxx SSXX
Contextual Info: MIL-M-38510/45B 5 April 1984 SUPERSEDING QUALIFICATION REQUIREMENTS REMOVED MIL-M-38510/45A 24 M a y 1 9 8 2 MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, TTL, LOW POWER, BISTABLE LATCHES, MONOLITHIC SILICON [Tn ACTIVE FOR NEW DESIGN AFTER DATE OF THIS REVISION.|

NEC 710

Abstract: DEV101
Contextual Info: k\fBm M ic r o w a v e T e c h n o l o g y MwT-H7 32 GHz Medium Power/High Gain AIGaAs/lnGaAs PHEMT |<-50 • • • • • ->| ^ -5 0 ->| +21.5 dBm OUTPUT POWER AT 12 GHz EXCELLENT FOR HIGH GAIN AND MEDIUM POWER APPLICATIONS 0.3 MICRON REFRACTORY METAL/GOLD GATE

MwT-770

Abstract: MWT7HP MWT-7 lsoj
Contextual Info: MwT-7 26 GHz Medium Power GaAs FET M ic r o w a v e T e c h n o l o g y Units in jim • • • • • +20 dBm OUTPUT POWER AT 12 GHz EXCELLENT FOR BROADBAND GAIN OR OSCILLATOR APPLICATIONS 0.3 MICRON REFRACTORY METAL/GOLD GATE 250 MICRON GATE WIDTH CHOICE OF CHIP AND TWO

Contextual Info: MwT-S7 u s M ic r o w a v e 18 GHz High Gain, Low Noise GaAs FET a techno lo gy àk • HIGH AVAILABLE GAIN WHEN BIASED FOR LOW-NOISE • EXCELLENT FOR BROADBAND GAIN OR OSCILLATOR BUFFER APPUCATIONS • 0.3 MICRON REFRACTORY METAL7GOLD GATE • 250 MICRON GATE WIDTH