NE25339
Contextual Info: GENERAL PURPOSE DUAL-GATE GaAs MESFET FEATURES NE25339 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE V gs = 1 V, I ds = 10 mA, f = 900 MHz SUITABLE FOR USE AS RF AMPLIFIER AND MIXER IN UHF APPLICATIONS LOW CRSS: 0.02 pF TYP HIGH GPS: 20 dB (TYP) AT 900 MHz
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NE25337
Abstract: KR sot-143 NE25339 marking X_j sot u79 018
Contextual Info: N E C / NEC L4574m 1SE D CALIFORNIA DGOlbSÔ 5 GENERAL PURPOSE DUAL-GATE GaAs MESFET FEATURES NE25337 NE25339 OUTLINE DIMENSIONS umtsmmm O U T LIN E 37 • SUITABLE FOR USE AS RF AMPLIFIER AND MIXER IN UHF APPLICATIONS • LOW C r s s : 0.02 pF (TYP) • HIGH Gps : 20 dB (TYP)
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NE25339
Abstract: NE25339-T1 KDB00 uhf microwave fet
Contextual Info: GENERAL PURPOSE DUAL-GATE GaAs MESFET FEATURES NE25339 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE VGS = 1 V, IDS = 10 mA, f = 900 MHz • SUITABLE FOR USE AS RF AMPLIFIER AND MIXER IN UHF APPLICATIONS • LOW CRSS: 0.02 pF TYP GPS 20 10 • LG1 = 1.0 µm, LG2 = 1.5 µm, WG = 800 µm
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ne25339ne253ne25339-t1ot-143+324-hourkdb00uhf microwave fet
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J Fet marking 2 AW
Abstract: 10E-15
Contextual Info: GENERAL PURPOSE DUAL-GATE GaAs MESFET FEATURES NE25339 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE V gs = 1 V, Ids = 10 mA, f = 900 MHz SUITABLE FOR USE AS RF AMPLIFIER AND MIXER IN UHF APPLICATIONS LOW CRSS: 0.02 pF TYP HIGH GPS: 20 dB (TYP) AT 900 MHz
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U78 IC
Abstract: mesfet fet
Contextual Info: GENERAL PURPOSE DUAL-GATE GaAs MESFET FEATURES NE25339 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE V g s = 1 V, I ds = 10 mA, f = 900 MHz S U IT A B L E F O R U S E A S R F A M P L IF IE R A N D M IX E R IN U H F A P P L IC A T IO N S L O W C R S S : 0.02 pF TYP
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Contextual Info: GENERAL PURPOSE DUAL-GATE GaAs MESFET FEATURES NE25339 POW ER GAIN AND NOISE F IG U R E v s. DRAIN TO S O U R C E V O LTA G E V g s = 1 V , Id s = 10 mA, f = 900 MHz SUITABLE FOR USE AS RF AMPLIFIER AND MIXER IN UHF APPLICATIONS LOW CRSS: 0.02 pF TYP HIGH GPS: 20 dB (TYP) AT 900 MHz
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NE25339-U77
Abstract: NE25339U77 NE25339 dual-gate NE25339U76
Contextual Info: GENERAL PURPOSE DUAL-GATE GaAs MESFET FEATURES NE25339 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE Vgs = 1 V, Ids = 10 mA, f = 900 MHz SUITABLE FOR USE AS RF AMPLIFIER AND MIXER IN UHF APPLICATIONS LOW CRSS: 0.02 pF TYP HIGH GPS: 20 dB (TYP) AT 900 MHz
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ne25339ne253bm2752500l5442+7ot-143ne25339-t1ne25339u76ne25339t1u76ne25339-u77ne25339u77dual-gate
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FET2
Abstract: 100E-6 10E-15 C12SAT
Contextual Info: NONLINEAR MODEL NE25339 SCHEMATIC see Page 2 UNITS FOR MODEL PARAMETERS Parameter Units time capacitance inductance resistance voltage current seconds farads henries ohms volts amps FET NONLINEAR MODEL PARAMETERS(1) Parameters FET1 FET2 Parameters FET1 FET2
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ne25339c11thc11deltc12sat+8100e-678e-100e-120e-1525e-121e-12fet210e-15
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SVI 3104 c
Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or
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an83301-1ne24615an83302an83303-1+16ne71083ne70083an83901an8530111/86-lnan86104svi 3104 cupc1678gne333stb 1277 transistor equivalenttransistor bf 175ne85635 packaging schematicne72000 vcsvi 3104ne9000ne720
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2SK2396
Abstract: PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711
Contextual Info: CD-ROM版RF & マイクロ波デバイス CD-ROM X13769XJ2V0CD00 11−1 RF & マイクロ波デバイス IC • 可変利得増幅器(µ PCx×××,µPG××××) 品 名 µPC8119T アプリケーション 移動通信 電源電圧 電流 周波数
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x13769xj2v0cd00pc8119tpc8120tpc8130ta+16pc8131tapg175tapc2723tpc3206grpc2748pc27452sk2396pc2763pc1658ne272832sc35452sc33572sc2757ne932392sc2570apc2711
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uPD16305
Abstract: uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943
Contextual Info: Search by Product Name Find tool 1. Click the icon on the tool bar. 2. The find dialog box will be displayed. 3. Input the full product name or part of the product name to Find be located and click . 4. A characteristic table will be displayed if the retrieved product name is clicked.
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pd43256ax13769xj2v0cd00pd750004pd750006+15pd750008pd75p0016pd750104pd750106pd750108upd16305upd63724aupc5024upc50232sc1940upc1237upd65656upc458upc2710upd65943
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nf025
Abstract: NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408
Contextual Info: CD-ROM RF and Microwave Devices CD-ROM X13769XJ2V0CD00 11-1 RF and Microwave Devices IC • AGC AMP. µ PCx×××, µPG×××× Part Number Applications Supply Voltage (V) Supply Current (mA) Operating Frequency (MHz) µPC8119T Mobile Comm. 3 11 100–1920
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x13769xj2v0cd00950mhz500mhzpc2794+13pc1687pc2744pc2775/nf025ne27283upc27x-band power transistor 100wne42484p147d2sk2396upg508nf025db2sc5408
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LORB
Abstract: NE2720 NE334S01
Contextual Info: Small Signal GaAs FETs Selection Guide. 1-2 Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs Typical S pecificatio ns @ Ta = 25°C PM Number Sat« Gate Length W idth Mm ftim ) •i.t RecomrnaruM Frequency Rang* . pVMW ' gB S " NE23300 0.3 280 0.1 to 18
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NE25339U77
Abstract: U-79 ne25339u76 NE25339 NE25339-T1 NE25339U78 NE25339U79 11dBtyp
Contextual Info: GENERAL PURPOSE DUAL-GATE GaAs MESFET FEATURES POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE VGS = 1 V, IDS = 10 mA, f = 900 MHz • LG1 = 1.0 µm, LG2 = 1.5 µm, WG = 800 µm • ION IMPLANTATION • AVAILABLE IN TAPE & REEL OR BULK Power Gain, GPS dB
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ne71084
Abstract: GaAs MESFET NE25139 NE4200 NE32684A NE71000 71083 ne72089 NE72000 MESFET Application
Contextual Info: Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs Typical Spécifications @ Ta * ZS'C ftffiW M M R M Bat* Part Humber Test Frequency Gita LeagM Width f Range | Frequency C6HZ Min) Pows Bias NF/Gi Bias Available Vos Ids HFow 6* Vds Ids PliB Package
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uPD72002-11
Abstract: uPD16305 uPC1237 upc1701 uPD65656 2SD1392 2sb1099 UPD65625 uPD78F0841 uPG508
Contextual Info: 品名別検索 検索ツール 1. ツールバーの アイコンをクリックしてください。 2. [検索]ダイアログ・ボックスが表示されます。 3. 検索したい品名または品名の一部を入力して, 検索 F を クリックしてください。
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NE67383
Contextual Info: General Purpose GaAs FETs Typical Specifications @ T a = 25°C Pw t m a '4 m . I NEW^ Güw> |N EW *> I NEW > I N Ew V I NEW ^ »»a Vus Id s M ÊM mA (mA) p p fc M NE33200 NE67300 NE71300 NE76000 NE76100 0.3 0.3 0.3 0.3 1.0 280 280 280 280 400 0.1 0.1 0.1
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220v AC voltage stabilizer schematic diagram
Abstract: 1000w inverter PURE SINE WAVE schematic diagram philips ecg master replacement guide ecg semiconductors master replacement guide diac 3202 bta16 6008 csr1000 mini Audio transformer 200k to 1k ct input jrc 2904 d BTA12 6008
Contextual Info: Prices Guaranteed Until July 31,1998 Catalog 594 Search Products Suppliers New Products CD Only Products How to Order Web Site Help Select an Option Main Menu New Products Help See pages 194 and 196 for new Trimmer Potentiometers. See pages 41 and 42 for new EEPROMS.
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batte48220v ac voltage stabilizer schematic diagram1000w inverter pure sine wave schematic diagramphilips ecg master replacement guide+7ecg semiconductors master replacement guidediac 3202bta16 6008csr1000mini audio transformer 200k to 1k ct inputjrc 2904 dbta12 6008
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UAA 1006
Abstract: manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71
Contextual Info: NEC Offices NEC Electronics Europe GmbH Oberrather Str. 4 D-40472 Düsseldorf, Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 NEC Electronics Italiana S.R.L. Via Fabio Filzi, 25A I-20124 Milano Tel. (02) 66 75 41 Fax (02) 66 75 42 99 NEC Electronics (Germany) GmbH
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d-40472i-20124i-00139d-30177+15gb-mk14d-81925s-18322f-78142e-28007uaa 1006manual* cygnus sl 5000transistor marking t79 ghzpc1658gnec ga fet marking code t79gaas fet t79pc1658mc-77122sc5431nec u71
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NE334S01
Abstract: E7138 nec microwave NE76084 NE67383
Contextual Info: NEC is a global force in the dozens of satellites around the world. j and engineering services are all geared to computer, communications and home CEL’s Space/Hi Rel Management Group | helping you get your designs off paper and electronics markets. The company’s products
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u-79
Abstract: NE25339
Contextual Info: GENERAL PURPOSE DUAL-GATE GaAs MESFET FEATURES • • SUITABLE FOR USE AS RF AMPLIFIER AND MIXER IN UHF APPLICATIONS LOW CRSS: 0.02 pF TYP • HIGH GPS: 20 dB (TYP) AT 900 MHz • LOW NF: 1.1 dB TYP AT 900 MHz • Lgi = 1.0 Jim, Lg2 = 1.5 Jim, Wg = 800 Jim
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free transistor equivalent book 2sc
Abstract: uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 RF and Microwave Devices 7 Optical Device 8 Index 9 April 1999 The export of these products from Japan is regulated by the Japanese government. The export of some or all of
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x10679ejhv0sg00free transistor equivalent book 2scupa1556ahthe japanese transistor manual 1981+7samsung uhf/vhf tv tunermosfet cross-reference 2skpd431000a-xupper arm digital sphygmomanometer circuit diagrampd72001upc1237upc 2002
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awm 20798 RIBBON CABLE
Abstract: awm STYLE 2919 COMPUTER CABLE 30V awm 2464 vw-1 300v shield cable specification M27500-24RC2S06 c2516 nec micro centronics 36 hp mini 2133 sata connector TPE 7058 DB15 male to db15 female G9731
Contextual Info: ND3% BASE1 XXXX4203-1158-1-P 1158 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 18-07-11 Hour: 13:36 TS:TS date TS time CABLE ASSEMBLIES Find Datasheets Online COMPUTER CABLE ASSEMBLIES 0.80 mm DIGITAL CAMERA CABLE, POWER OVER CAMERALINK COMPATIBLE 3 SFP & SFP+ CABLE ASSEMBLIES CONT.
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1md26-x560-00c-x001sd26-3120-00c-x00grp-130g1801/2+11bk007awm 20798 ribbon cableawm style 2919 computer cable 30vawm 2464 vw-1 300v shield cable specificationm27500-24rc2s06c2516 necmicro centronics 36hp mini 2133 sata connectortpe 7058db15 male to db15 femaleg9731
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