NE25139
Abstract: ne720b transistor marking U72 ghz NE25139-T1 NE25139U71 NE720 NE25139T1U74 NE25139T1U71 16E-13
Contextual Info: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25139 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE • SUITABLE FOR USE AS RF AMPLIFIER IN UHF TUNER GPS 10 • HIGH GPS: 20 dB TYP AT 900 MHz • LOW NF: 1.1 dB TYP AT 900 MHz • LG1 = 1.0 µm, LG2 = 1.5 µm, WG = 400 µm
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ne25139ne251ne25139t1u7424-hour+7ne720btransistor marking u72 ghzne25139-t1ne25139u71ne720ne25139t1u7116e-13
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NEC Ga FET marking A
Abstract: NE25139T1U74 NE25139U NE25139T1U71
Contextual Info: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25139 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE SUITABLE FOR USE AS RF AMPLIFIER IN UHFTUNER QPS LOW CRSS: 0.02 pF TYP M — /; { ' // i ! 1 V f 1 HIGH GPS: 20 dB (TYP) AT 900 MHz LOW NF: 1.1 dB TYP AT 900 MHz
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ne25139vi32s90cimne251+7ne25139t1ne25139u7424-hournec ga fet marking ane25139t1u74ne25139une25139t1u71
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NE25339
Abstract: NE25339-T1 KDB00 uhf microwave fet
Contextual Info: GENERAL PURPOSE DUAL-GATE GaAs MESFET FEATURES NE25339 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE VGS = 1 V, IDS = 10 mA, f = 900 MHz • SUITABLE FOR USE AS RF AMPLIFIER AND MIXER IN UHF APPLICATIONS • LOW CRSS: 0.02 pF TYP GPS 20 10 • LG1 = 1.0 µm, LG2 = 1.5 µm, WG = 800 µm
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ne25339ne253ne25339-t1ot-143+324-hourkdb00uhf microwave fet
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J Fet marking 2 AW
Abstract: 10E-15
Contextual Info: GENERAL PURPOSE DUAL-GATE GaAs MESFET FEATURES NE25339 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE V gs = 1 V, Ids = 10 mA, f = 900 MHz SUITABLE FOR USE AS RF AMPLIFIER AND MIXER IN UHF APPLICATIONS LOW CRSS: 0.02 pF TYP HIGH GPS: 20 dB (TYP) AT 900 MHz
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ne25339ne253ot-143ne25339-t1+2j fet marking 2 aw10e-15
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FET2
Abstract: 100E-6 10E-15 C12SAT
Contextual Info: NONLINEAR MODEL NE25339 SCHEMATIC see Page 2 UNITS FOR MODEL PARAMETERS Parameter Units time capacitance inductance resistance voltage current seconds farads henries ohms volts amps FET NONLINEAR MODEL PARAMETERS(1) Parameters FET1 FET2 Parameters FET1 FET2
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ne25339c11thc11deltc12sat+8100e-678e-100e-120e-1525e-121e-12fet210e-15
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u-79
Abstract: NE25339
Contextual Info: GENERAL PURPOSE DUAL-GATE GaAs MESFET FEATURES • • SUITABLE FOR USE AS RF AMPLIFIER AND MIXER IN UHF APPLICATIONS LOW CRSS: 0.02 pF TYP • HIGH GPS: 20 dB (TYP) AT 900 MHz • LOW NF: 1.1 dB TYP AT 900 MHz • Lgi = 1.0 Jim, Lg2 = 1.5 Jim, Wg = 800 Jim
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ne25339ne253mesf39u79ne25339t1u79+224-houru-79
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U73-U74
Abstract: 14E-14
Contextual Info: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25139 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE SUITABLE FOR USE AS RF AMPLIFIER IN UHFTUNER LOW C r s s : 0.02 pF TYP m HIGH GPS: 20 dB (TYP) AT 900 MHz CÛ •a 7D LOW NF: 1.1 dB TYP AT 900 MHz
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ne25139ne251ot-143ne25139-t1+7ne25139u71ne25139t1u71ne25139u72ne25139t1u72ne25139u73u73-u7414e-14
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