BM27525 Search Results

Contextual Info: N E C ELECTRONICS INC blE T> • bM27525 D0342bfl 1BT H N E C E MC-421000A32 1,048,576 X 32-Bit Dynamic CMOS RAM Module JE/ W NEC Electronics Inc. Description Pin Configuration The MC-421000A32 is a fast-page dynamic RAM module organized as 1,048,576 words by 32 bits and de­

HPB100474E

Abstract: JJPB100474E JUPB100474E nec A2C
Contextual Info: N E C ELECTRONICS INC blE D NEC NEC Electronics Inc. bM27525 GG3S37b G73 « N E C E jjPB100474E 1024 X 4-Bit 100K ECL RAM Description Pin Configurations The /JPB100474E is a very-high-speed 100K in terface ECL RAM organized as 1024 words by 4 bits and designed w ith noninverted, o pen -em itter o utputs and

D7821

Abstract: KBR-12 d78213cw d78213gc d78214 D78213 PD78212CW
Contextual Info: bM27525 004305b tSb NEC Electronics Inc. «NECE pPD78214 Family MPD78212/213/214/P214 8' Bît»K-Series Microcontrollers With A/D Converter, Real-Time Output Ports _ Description The ¿/PD78212, /JPD78213, pPD78214, and ¿(PD78P214

Contextual Info: k. I N E C. ELECTRONICS INC 3ÖE D • bM27525 002=1012 b ■ PHOTO INTERRUPTER _ PS5003HC PHOTO 1C IN T E R R U P T E R DESCRIPTIO N PACKAG E DIMENSIONS Unit : mm The PS5003HC photo interrupter module is a GaAs Light Emitting Diode coupled to a Si monolithic integrated circuit

Contextual Info: N E C ELECTRONICS INC Tfl D Ë J bM27525 ODIAIS! 4 T ’*j3’ £5" / ¿ P A NPN SILICON E P I T A X I A L HIGH POWER SPEED I 4 5 2 TRANSISTOR H ARRA'; SWITCHING DESCRIPTION The j i PA1452H is an array of four power transistors. I t is especially designed for applications demand for high peak current cap ab ility. It is

424256 pin out

Abstract: TIO 872-M 424256 pd42256 nec 424256 DG342
Contextual Info: blE ]> • bM27525 D O a m 1!? DMT MC-42512A36, -424512A36 524,288 X 36-Bit Dynamic CMOS RAM Module NEC Electronics Inc. N E C 0. 3 - ELECTRONICS INC Description Pin Configuration T h e M C -4 2 5 1 2 A 3 6 a n d th e M C -4 2 4 5 1 2 A 3 6 a re d y n a m ic

BH-80

Abstract: NEC 421000 MC-421000A36
Contextual Info: NEC ELECTRONICS INC me 3ÖE D B bM27525 QQ3175t> 1 BINECE t - ï w NEC Electronics Inc. j - p MC-421000A36 1,048,576 X 36-Bit Dynamic CMOS RAM Module Description Pin Configuration The M C -421000A 36is a fast-page dynam ic RAM module organized as 1,048,576 words by 36 bits and designed

Contextual Info: bM27525 0042205 O ti HNECE MOS INTEGRATED CIR CU IT ¿ ¿ P D 4 2 S 1 6 8 0 0 ,4 2 S 1 7 8 0 0 16 M BIT D Y N A M IC RAM FAST PAGE M ODE PRELIMINARY DESCRIPTION The NEC ¿¿PD42S16800 and /¿PD42S17800 are 2 097 152 words by 8 b it s dynamic CMOS RAM w ith o p tio n a l fa s t page mode.

Contextual Info: bSE D • bM27525 GG37S23 4Ö5 HNECE N E C ELECTRONICS INC LASER DIODE / NDL5071 1 550 nm OPTICAL FIBER COMMUNICATIONS InGaAsP DOUBLE HETEROSTRUCTURE PULSED LASER DIODE DESCRIPTION ND L5071 is a 1 550 nm pulsed laser diode especially designed fo r optica l m easurement equipm ent O TD R . The DC-PBH

TRAIN 40pin 400 mm

Abstract: D27C4000D 3BD4 27C4000D
Contextual Info: bM27525 0043b02 =170 • NECE DESCRIPTION The /iP D 2 7 C 4 0 0 0 is a 4 194 3 0 4 -b it electrically p ro g ra m m a b le read-only m e m o ry . The w o rd organization is selectable w ord m ode: 256K w o rd s by 16 bits, byte mode: 512K w o rd s by 8 bits . The device is fabricated

DIODE s2l

Abstract: 4173 diode S2L DIODE PS5003HC photo interrupter module photo interrupter "Photo Interrupter MODULE"
Contextual Info: k. I N E C. ELECTRONICS INC 3ÖE D • bM27525 002=1012 b ■ PHOTO 'INTERRUPTER _ P S 5 0 0 3 H C PHOTO 1C INTERRUPTER DESCRIPTION PACKAGE DIMENSIONS Unit : mm 3.0 = 0.2 I The PS5003HC photo interrupter module is a GaAs Light Emitting Diode coupled to a Si monolithic integrated circuit

DD-37

Contextual Info: b2E » • bM27525 N E c ELEcmmcs / DD37MÖÜ 2 bT « N E C E INC - W S E R DIODE NDL5083 1 310 nm OPTICAL FIBER COMMUNICATIONS InGaAsP DOUBLE HETEROSTRUCTURE LASER DIODE D E SC RIPTIO N N D L 5 0 8 3 is a 1 3 1 0 nm laser diode especially designed fo r optica l data com m unications. The Mesa-type DC-PBH Double

C2987A

Abstract: uPC1298 C2987 C4267 UPC1298V equivalent 2SA1631 NEC l427 2SC1844F UPC1298V 2SB966
Contextual Info: • bM27525 DDMTE? NEC electron DEVICE h^h « N E C E _ ^ . . '- _ BIPOLAR ANALOG INTEGRATED CIRCUIT ■- ' /¿ P c i 2 9 8 V 50 to 80 W POWER AMPLIFIER DRIVER DESCRIPTION /¿PC1298V is a integrated monolithic circuit designed for 50 W to 80 W class HiFi audio power amplifier and consists of a

169800

Abstract: 80500 TRANSISTOR D 5036 cd 4599 4463 B 80500 bb
Contextual Info: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE687 SERIES FEATURES • LOW NOISE: 1.3 dB AT 2.0 GHz • LOW VOLTAGE OPERATION • EASY TO MATCH • HIGH GAIN BANDWIDTH PRODUCT: fTof 13 GHz 18 SOT 343 STYLE 19 (3 PIN ULTRA SU PER MINI MOLD) 30 (SOT 323 STYLE)

AxC11

Contextual Info: N EC ELECTRONICS INC dEEC ^ t 7 E 1 • tMS7S2S DG3R58b MM3 H N E C E _ 16Mbit Synchronous DRAM_ CONTENTS Programable 3 - stage pipeline. Features.

UPD4264405

Contextual Info: PRELIMINARY DATA SH EET NEC MOS INTEGRATED CIRCUIT juPD4264405, 4265405 64 M-BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, HYPER PAGE MODE Description The >iPD4264405,4265405 are 16,777,216 words by 4 bits CMOS dynamic RAMs with optional hyper page mode. Hyper page mode is a kind of page mode and is useful for the read operation.

15Z1

Abstract: motor jun tuo 2T825 LM 3177 switching reg stepping motor EM 58b d70433gd d70433 uPD70433 PD70433 TFK 601
Contextual Info: DATA SHEET N E MOS INTEGRATED CIRCUIT C ¿ ¿ P D 7 4 3 3 V55PI 16-BIT MICROPROCESSOR DESCRIPTION The ¿iPD70433 V55P0 is a m icroprocessor in which a 16-bit CPU, RAM, serial interface, parallel interface, A/D converter, tim ers; DMA controller, interrupt controller, etc., are integrated

2SC2570

Abstract: 2sc2570 transistor NE02132
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES_ • HIGH INSERTIO N G AIN: 18.5 dB at 500 MHz • LOW NOISE FIG URE: 1.5 dB at 500 MHz • HIGH PO W ER G AIN: 12 dB at 2 GHz • LARG E DYN AM IC RANG E: 19 dBm at 1 dB,

dt5 tuner module

Abstract: op102 ITT Semiconductors D78P0 D0122 ddt237
Contextual Info: \ USER’S MANUAL NEC ¿¿PD78023 ¿¿PD78024 ¿¿PD78P024 Document No. IEU-1373A O. D. No. IEU-842A Date Published February 1995 P Printed in Japan NEC Corporation 1994 b427525 Q Q' I BD' n bSS NOTES FOR CMOS D EVICES PRECAUTION AGAINST ESD FOR SEMICONDUCTORS

Contextual Info: PRELIMINARY DATA SHEET VISIBLE LASER DIODE NDL3320ST, NDL3320SU 5 mW, 650 nm AIGalnP MQW VISIBLE LASER DIODE FOR DVD, DVD-ROM APPLICATIONS DESCRIPTION NDL3320ST, NDL3320SU are AIG alnP 650 nm visible laser diodes and especially developed lo r DVD, DVD-ROM .

PS3711-1

Contextual Info: PRELIMINARY DATA SHEET HIGH SENSITIVITY TRIAC ZERO-CROSS OUTPUT TYPE SOP PHOTOCOUPLER PS3711-1 PS3712-1 FEATURES DESCRIPTION_ • PS3711-1 and PS3712-1 are optically coupled isolators containing a GaAs light emitting diode and photo triac.

LE347

Abstract: toba Q 0265 R HS 8180 42S18180
Contextual Info: L427S2S DQ4 2 4 M4 b 70 • NECE MOS INTEGRATED CIRCUIT ju P D 4 2 S 1 6 1 8 0 ,4 2 S 1 7 1 8 0 ,4 2 S 1 8 1 8 0 16 M BIT D Y N A M IC RAM FAST PAGE M O D E & BYTE R E A D /W R IT E M ODE - P R E LIM IN A R Y -D ESCRIPTIO N

Rambus RDRAM ASIC

Abstract: RDRAM cross reference NEC RDRAM 36 REF05
Contextual Info: PRELIMINARY UATA SHEET NEC MOS INTEGRATED CIRCUIT 16M-BIT Rambus DRAM 1M-WORD X 8-BIT X 2-BANK Description The 16-Megabit Rambus DRAM RDRAM™ is an extremely-high-speed CMOS DRAM organized as 2M words by 8 bits and capable of bursting up to 256 bytes of data at 2 ns per byte. The use of Rambus Signaling

TCA 700

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT MC-422000A32 2 M-WORD BY 32-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-422000A32 is a 2,097,152 words by 32 bits dynamic RAM module on which 16 pieces of 4 M DRAM: /¿PD424400 are assembled. This module provides high density and large quantities of memory in a small space without utilizing the surfacemounting technology on the printed circuit board.