NE32708 Search Results

NE32700

Abstract: NE46734 NE32702 NE32708 NE32740A NE32740B NE46700 NE68039 NE94430
Contextual Info: N E C / CALIFORNIA SbE D • b4E7414 DD0ES33 374 M N E C C Additional Small Signal Silicon Bipolar Products E LE C T R IC A L CH ARACTERISTICS PAR T N UM BER PACKAGE CODE VCEO V (mA) Pt (W) NE32700 NE32702 NE32708 NE32740A NE32740B CHIP 02 08 40A 40B 12

Contextual Info: NE32708 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)20 I(C) Max. (A)50m Absolute Max. Power Diss. (W)300m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

SVI 3104 c

Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or

2SC1924

Abstract: NE32700
Contextual Info: NPN SILICON HIGH SPEED SWITCHING TRANSISTOR NE327 SERIES FEATURES_ DESCRIPTION • ULTRA-HIGH SWITCHING SPEED : toN 0.7 ns TYP, toFF 0.5 ns TYP The NE327 series of NPN silicon transistors is designed for use in ultrahigh speed current mode switching applications

NE99532

Abstract: 2sc3358 NE3005B20 NE85637 NE4201 NE1010E 2SC3358 transistor ne3005b-20 NE1005E NEC 8563
Contextual Info: NEC/ CALIFORNIA 1SE D bMs?m4 D D o m a i a T IM S - T - it- t r NEC NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES T'3h21 FEATURES DESCRIPTION AND APPLICATIONS • H IG H G A IN B A N D W ID T H P R O D U C T : f r = 7 G H z The NE856 series of NPN epitaxial silicon transistors Is de­

NE99532

Abstract: NE32700 NE59300 NE32702 NE32708 NE32740A NE32740B NE46700 NE46734 S21E
Contextual Info: I . _ ^, . Additional Small Signal and Medium Power Silicon Bipolar Products N E C / CALIFORNIA 1SE D • r-3 ^ 0 1 -r-3 /-0/ h427414 0001517 b ■ = E L E C T R IC A L C H A R A C T E R IS T IC S A B S O L U T E M A X IM U M R A T IN G S C cB hFE VCB PART

2SC1925

Abstract: NE32708 2SC1924
Contextual Info: NPN SILICON HIGH SPEED SWITCHING TRANSISTOR NE327 SERIES FEATURES DESCRIPTION • ULTRA-HIGH SWITCHING SPEED : toN 0.7 ns TYP, toFF 0.5 ns TYP The NE327 series of NPN silicon transistors is designed for use in ultrahigh speed current mode switching applications

2SC1924

Abstract: NE32700 2sc1925 ne327 NE32708
Contextual Info: NPN SILICON HIGH SPEED SWITCHING TRANSISTOR FEATURES DESCRIPTION • ULTRA-HIGH SWITCHING SPEED : to N 0.7 ns TYP, to F F The NE327 series of NPN silicon transistors is designed for use in ultrahigh speed current mode sw itching applications and for use in m icrowave am plifiers up to 1 GHz. Transistors

Motorola transistors MRF 947

Abstract: motorola hep cross reference 2N5070 2N5591 MOTOROLA Semicon volume 1 mrf532 transistor equivalents for 2n3866 siemens semiconductor manual Microlab Splitter Specification sheet pt9797
Contextual Info: MOTOROLA RF DATA MANUAL Prepared by Technical Information Center M otorola’s leadership position of RF power, small-signal transistors and hybrid amplifiers is by research and new product development coupled with a com plete in-house m anufacturing ca pa b ility in clu d in g silico n g row ing,

transistor IR 324 C

Abstract: transistor selection guide
Contextual Info: Small Signal Bipolar Transistor Selection Guide Typical Minimum Noise Figures and Associated Gain vs. Frequency d B Gain Optimum Figure, G a (d B ) Noise Noise Figure, N F opt at Optimum F re q u e n c y , f (G H z ) Typical Output Power and Gain vs. Frequency