2SC3326 Search Results

2SC3326

Contextual Info: 2SC3326 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 2SC3326 ○ ミューティング用 ○ スイッチング用 単位: mm • エミッタ･ベース間電圧が大きい。 : VEBO = 25 V (最大) • Reverse hFE が大きい。

2SC3326

Contextual Info: TOSHIBA 2SC3326 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3326 Unit in mm FOR MUTING AND SWITCHING APPLICATIONS + 0.5 High Emitter-BaseVoltage : Ve b O ~ 25V (Min.) High Reverse hjrg : Reverse hjrg = 150 (Typ.) (VCE= —2V, IC = —4mA)

Contextual Info: SILICON NPN EPITAXIAL TYPE 2SC3326 Unit in mm FOR MUTING AND SWITCHING APPLICATIONS. FEATURES: . High Emitter-Base Voltage : VggQ=25V Min. . High Reverse hpg : Reverse hpg=150(Typ.) (Vçjr=-2V, Iç=-2mA) . Low on Resistance : Rofj=lfi (Typ.) (Ib =5uiA) . High DC Current Gain : hpj;= 200 "1200

2SC3368

Abstract: 2SC3356 to 92 2sc3325 cross 2SC3356 2SC3358 2SC3369 2SA1317 2SC3371 2sa131 2SC3331
Contextual Info: - 154 - Ta=25t . *EP(äTc=25iC) 2SC3322 2SC3324 2SC3325 2SC3326 2SC3327 2SC3328 2SC3329 2SC3330 2SC3331 2SC3332 2SC3333 2SC3334 2SC3336 2SC3337 2SC3338 2SC3342 2SC3345 2SC3346 2SC3352 2SC3352A 2SC3353 2SC3353A 2SC3354 2SC3355 2SC3356 2SC3357 2SC3358 2SC3360

2SC3326

Abstract: TO-236MOD
Contextual Info: 2SC3326 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3326 For Muting and Switching Applications Unit: mm • High emitter-base voltage: VEBO = 25 V (min) • High reverse hFE: Reverse hFE = 150 (typ.) (VCE = −2 V, IC = −4 mA) • Low on resistance: RON = 1 Ω (typ.) (IB = 5 mA)

vebo 25

Abstract: 2SC3326
Contextual Info: Transistors IC SMD Type Silicon NPN Epitaxial 2SC3326 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 High reverse hFE: Reverse hFE = 150 typ. (VCE = -2 V, IC = -4 mA). Low on resistance: RON = 1 0.55 High emitter-base voltage: VEBO = 25 V (min). +0.1 1.3-0.1

Contextual Info: 2SC3326 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3326 For Muting and Switching Applications Unit: mm • High emitter-base voltage: VEBO = 25 V (min) • High reverse hFE: Reverse hFE = 150 (typ.) (VCE = −2 V, IC = −4 mA) • Low on resistance: RON = 1 Ω (typ.) (IB = 5 mA)

Contextual Info: 2SC3326 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3326 For Muting and Switching Applications Unit: mm • High emitter-base voltage: VEBO = 25 V (min) • High reverse hFE: Reverse hFE = 150 (typ.) (VCE = −2 V, IC = −4 mA) • Low on resistance: RON = 1

Contextual Info: Reliability Tests Report Product Name: 2SC3326 Package Name: S-MINI 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Flow) Heat resistance (Iron) Temperature cycling Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s

2SC3326

Contextual Info: 2SC3326 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3326 For Muting and Switching Applications • Unit: mm High emitter-base voltage: VEBO = 25 V (min) • High reverse hFE: Reverse hFE = 150 (typ.) (VCE = −2 V, IC = −4 mA) • Low on resistance: RON = 1 Ω (typ.) (IB = 5 mA)

Contextual Info: TO SHIBA 2SC3326 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 0^ ^ Unit in mm FOR MUTING AND SWITCHING APPLICATIONS • • • • • + 0.5 2.5-0.3 High Emitter-Base Voltage : Vj5BO~25V (Min.) High Reverse hpg : Reverse hpE = 150 (Typ.) (V C E = -2 V , Iç;= —4mA)

2SC3326

Contextual Info: 2SC3326 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3326 For Muting and Switching Applications Unit: mm • High emitter-base voltage: VEBO = 25 V (min) • High reverse hFE: Reverse hFE = 150 (typ.) (VCE = −2 V, IC = −4 mA) • Low on resistance: RON = 1 Ω (typ.) (IB = 5 mA)

2SC3326

Abstract: marking cc
Contextual Info: TO SH IBA 2SC3326 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3326 Unit in mm FOR MUTING AND SWITCHING APPLICATIONS • • High Emitter-Base Voltage High Reverse hjrg • • • Low On Resistance High DC Current Gain Small Package + 0.5

2SC3326

Contextual Info: 2SC3326 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3326 For Muting and Switching Applications • Unit: mm High emitter-base voltage: VEBO = 25 V (min) · High reverse hFE: Reverse hFE = 150 (typ.) (VCE = −2 V, IC = −4 mA) · Low on resistance: RON = 1 Ω (typ.) (IB = 5 mA)

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

NEC k 3654

Abstract: 2SC3536 DTC124ES Hitachi 3640 DTC114ES 2SC 3674 S 2SC3738 2sc3242a 2SC3535 DTC144ES
Contextual Info: - m € T y p e No. £ Manuf. 2SC 3 6 4 0 iE. 2SC 3 6 4 1 H 2SC 3 6 4 2 ^ & H # SANYO TOSHIBA S NEC 2SC3643 2SC3536 2SC3644 2SC3536 tL HITACHI * ± i1 FUJITSU tfi T MATSUSHITA # 2SC3535 2SC3737 H. n 2SC3536 2SC3738 2SC 3 6 4 4 J H n 2SC3536 & 2SC2880 2SC 3 6 4 6

SSM3J307T

Abstract: SSM3J328R SSM3J334R
Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

HDR1X3

Abstract: BLM-21A102S S2-AES17LP
Contextual Info: CDB43L42 Evaluation Board for CS43L42 Rev. D Features Description l Demonstrates The CDB43L42 evaluation board is an excellent means for quickly evaluating the CS43L42 24-bit, stereo D/A converter. Evaluation requires an analog signal analyzer, a digital signal source, a PC for controlling the

2sc2878 equivalent

Abstract: MGSF1NH02ELT
Contextual Info: 06/20/00 Errata: CS43L43 Rev. D CS43L43 Low Voltage, Stereo DAC with Headphone Amp All references to the CS43L43 mentioned below shall be taken to refer to revision D of the CS43L43 product. The hardware revision code can be found in the 10-character field

ESM 740

Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Contextual Info: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ