5964 Search Results

HFCT-5964ATL

Abstract: HFCT-5964NL HFCT-5964TL
Contextual Info: Agilent HFCT-5964TL/TG/NL/NG/ATL/ ATG Single Mode Laser Small Form Factor Transceivers for ATM, SONET OC-3 /SDH STM-1 Part of the Agilent METRAK family Data Sheet Description The HFCT-5964TL/TG/NL/NG/ ATL/ATG are high performance, cost effective modules for serial

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 40V 5964 5 .9 6.4GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The M G F C 4 0 V 5 9 6 4 is an internally impedance-matched GaAs power F E T especially designed for use in 5 . 9 — 6 . 4 20.4 ± 0 . 2 0 .8 0 3 ± 0 . 0 0 8

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F C 44V 5964 5 . 9 —6 .4 G H z BAND 2 4 W INTERNA LLY M ATCHED GaAs FET DESCRIPTION OUTLINE D R A W IN G The M G F C 4 4 V 5 9 6 4 is an internally impedance-matched Unit: millimeters inches GaAs power F E T especailly designed for use in 5.9 ~ 6.4

C38V5964

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F C 38V 5964 5 .9 —6.4G H z BAND 6 W INTERNALLY MATCHED GaAs FET DESCRIPTION T h e M G F C 3 8 V 5 9 6 4 is a n in te rn a lly im p e d a n c e -m a t c h e d G aA s p o w e r F E T es p ec ially designed fo r use in 5 . 9 — 6 . 4

5964a

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 40V 5964A p R tU o< a R ^ubiC‘: 5 .9 6.4GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAW ING The M G F C 4 0 V 5 9 6 4 A is an internally im pedance-m atched GaAs power FET especially designed fo r use in 5 . 9 — 6 ,4

E173874

Abstract: EN60825-1 HFCT-5964ATL HFCT-5964NL HFCT-5964TL HFE7100
Contextual Info: Agilent HFCT-5964xxx Single Mode Laser Small Form Factor Transceivers for ATM, SONET OC-3/SDH STM-1 Part of the Agilent METRAK family Data Sheet Description The HFCT-5964xxx are high performance, cost effective modules for serial optical data communications applications

FLM5964-8C

Contextual Info: F I M 5964-HC Internally Matched Power ìaAs E E l s ABSOLUTE MAXIMUM RATING (Am bient Temperature Ta=25°C Item Symbol Condition Drain-Source Voltage vds Gate-Source Voltage VGS Tc = 25°C Total Power Dissipation Pt Storage Temperature Tstg Channel Temperature

Contextual Info: Agilent HFCT-5964xxx Single Mode Laser Small Form Factor Transceivers for ATM, SONET OC-3/SDH STM-1 Data Sheet Description The HFCT-5964xxx are high performance, cost effective modules for serial optical data communications applications specified for a signal rate of

Contextual Info: 5 4 3 2 1 DRAWING NO. ফ᥻ CONTROLLED DOCUMENT 㓪ো P/N ⠜ᴀ Rev 32-5964UL 32-5964UL REVISIONS ᮹ᳳ SEP 14,09 Rel'd Date 01 01 OFFICIAL RELEASE 2009.09.0 08-20-09 Y U T W T 8 08:44:26 +08'00' D D 4.98 5.89 ±.12 2.54 ±.12 1.15 ±.07 2.77 C C 2.00u.05

596435SL

Contextual Info: T O S H IB A MICROWAVE POWER GaAs F ET M IC R O W A V E S E M IC O N D U C T O R TIM 5964-35SLA TEC H N IC A L DATA PRELIMINARY FEATURES : • LO W IN T E R M O D U L A T IO N D IS T O R T IO N ■ HIGH E F F IC IE N C Y T]add = 39% at 5 .9 to 3 .4 G H z IM3 = - 45d 3 c at Po = 3 5 .0 d B m

dbrn

Abstract: MGFC40V5964A
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> oC, NOW«- M G FC 40V 5964A „ . u i e Sif"'1 so,.ep a 61 5 . 9 —6 .4 G H z BAND 1 0 W INTERNA LLY M ATCHED GaAs FET \ DESCRIPTION T h e M G F C 4 0 V 5 9 6 4 A is an internally im p e d a n c e -m a tc h e d GaAs pow er F E T especially designed fo r use in 5 . 9 — 6 . 4

x band Gaas Power Amplifier 10W

Abstract: MGFC40V5964 pir 5 r0049 my fet
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 40V 5964 5 . 9 —6 .4 G H z BAND 1 0 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 4 0 V 5 9 6 4 is an internally impedance-matched GaAs power F E T especially designed fo r use in 5 . 9 — 6 . 4 G H z band amplifiers. The herm etically sealed metal-ceramic

MC-5* NEC

Contextual Info: PRELIMINARY DATA SHEET_ GaAs INTEGRATED CIRCUIT MC-5963, MC-5964 800 M TO 900 MHz-BAND POWER AMPLIFIER FOR THE ANALOG HAND-HELD PHONE FOR AMPS, E-TACS DESCRIPTION The MC-5963, 5964 are 800 to 900 MHz band GaAs Multi-chip IC’s which were developed for digital Cellular

Contextual Info: Agilent AFCT-5964TLZ/TGZ/ATLZ/ ATGZ/NLZ/NGZ Single Mode Laser Small Form Factor Transceivers for ATM, SONET OC-3 /SDH STM-1 Part of the Agilent METRAK family Data Sheet Description The AFCT-5964TLZ/TGZ/ATLZ/ ATGZ/NLZ/NGZ are high performance, cost effective

3.5mm jack trrs circuit diagram

Abstract: 3.5mm audio jack connection diagram 3.5mm jack circuit diagram 3.5mm trrs 6 pin 3.5mm stereo microphone jack stereo 3.5mm jack socket 4 pin 3.5mm audio socket jack detect 3.5mm jack socket TRS jack 3.5mm jack socket pin diagram
Contextual Info: 19-5964; Rev 0; 06/11 TION KIT EVALUA BLE IL AVA A Low-Power Headset Detectors with SEND/END Button Support Features The MAX14579E/MAX14579AE provide a simple solution for detecting the insertion and managing the operation of a 3.5mm stereo headset with a microphone. These

C38V5964

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F C 38V 5964 5 .9 6.4GHz BAND 6W INTERNALLY MATCHED GaAs FET DESCRIPTION T h e M G F C 3 8 V 5 9 6 4 is a n in te rn a lly im p e d a n c e -m a tc h e d GaAs p o w e r F E T especially designed fo r use in 5 . 9 - 6 . 4

agilent n3300A

Abstract: N3303
Contextual Info: Programming Guide Agilent Technologies DC Electronic Loads Models N3300A, N3301A, N3302A, N3303A N3304A, N3305A, N3306A, and N3307A Part No. 5964-8198 Microfiche No 5964-8199 Printed in Malaysia March, 2002 Safety Summary The beginning of the electronic load User’s Guide has a Safety Summary page. Be sure you are familiar

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 42V 5964A PB£ U ’ e 5 . 9 —6 .4 G H z BAND 1 6 W INTERNA LLY M ATCHED GaAs FE T DESCRIPTION T h e M G F C 4 2 V 5 9 6 4 A is an internally im p e d a n c e -m a tc h e d GaAs power F E T especailly designed fo r use in 5 .9 ~ 6.4

Contextual Info: 5 4 3 2 1 DRAWING NO. 32-5964UL- CUST D Description: RJ11 MOD Plug 50"U,STR,RND CBL Part No: 32-5964UL REVISIONS OFFICIAL RELEASE 01 Application: Modular Plug Crimp Tool: N/A 2009.09.0 08-23-09 T W B Y T 8 09:30:33 D +08'00' Insulation Resistance: 1000 Ohms

Contextual Info: PRELIMINARY DATA SHEET_ GaAs INTEGRATED CIRCUIT MC-5963, MC-5964 800 M TO 900 MHz-BAND POWER AMPLIFIER FOR THE ANALOG HAND-HELD PHONE FOR AMPS, E-TACS DESCRIPTION The MC-5963, 5964 are 800 to 900 MHz band GaAs Multi-chip IC’s which were developed for digital Cellular

Fujitsu FLM 150

Abstract: 5964-6D
Contextual Info: FLM 5964-6D Internally Matched Power CiaAs I 'E l s ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage vds 15 V Gate-Source Voltage vgs -5 V 31.2 w °c Total Power Dissipation Tc = 25°C pt Storage Temperature

Contextual Info: FLM 5964 12DA - Internally Matched Power ìaAs F ET s ABSOLUTE MAXIMUM RATING (A m bient Tem perature Ta=25°C Hem SymlxM Condition Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage VGS -5 V 57.6 w Total Power D issipation pt Tc = 25°C Storage Temperature

EN60825-1

Abstract: HFCT-5964ATL HFCT-5964NL HFCT-5964TL HFE7100 RD130
Contextual Info: Agilent HFCT-5964xxx Single Mode Laser Small Form Factor Transceivers for ATM, SONET OC-3/SDH STM-1 Part of the Agilent METRAK family Data Sheet Description The HFCT-5964xxx are high performance, cost effective modules for serial optical data communications applications

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> I4;v ^ " M G FC 39V 5964A ,tu5* Ÿ ,r.>' " . . , 1 a '-'c . 5 .9 ~ 6 .4 G H z BAND 8 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 3 9 V 5 9 6 4 A is an internally im ped an ce-m atched GaAs power F E T especially designed fo r use in 5 . 9 — 6 . 4