mitsubishi microwave
Abstract: MGF1601
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1601B MICROWAVE POWER GaAs FET DESCRIPTION The M G F 1 6 0 1 B , m ed iu m -p o w er GaAs FET w ith an N channel S cho ttky g a te, is designed fo r use in S to X band am plifiers and oscillators. The herm etically sealed m etalceram ic package assures m inim um parasitic losses, and
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k 1413 FET
Abstract: MGF1601B MGF1601
Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MGF1601B MICROWAVE POWER GaAs FET DESCRIPTION The MGF1601B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic Unit:millimeters
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GF-17
Abstract: gw 340 GD10 MGF0905A MGF1601
Contextual Info: HIGH POWER G aAs FET M G F16 0 1 B /1 801 B /09xxx/24xxx Series Typical Characteristics Type MGF1601B MG F1801B MQF0904A MGF0905A MGF090BB MQF0907B MQF2407A MGF241SA MGF2430A MGF244B PldB dBm 21.8 23.0 28.0 34.0 37.0 40.0 24.5 27.5 30.5 32.0 I \ GW: (dB)
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/09xxx/24xxxgd-10gf-21gf-17+6mgf1601bf1801bgw 340gd10mgf0905amgf1601
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MGF1601
Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MGF1601B MICROWAVE POWER GaAs FET DESCRIPTION OUTLINE DRAWING U n itm illim e te rs The MGF1601B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The
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MGF1601
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET MGF1601B MICROWAVE POWER GaAs FET DESCRIPTION U ntim i Kmeters OUTLINE DRAWING The MGF1601B, medium-power GaAs FET with an N-channel Schotlky gate, is designed lor use in S 1o X band amplifiers and oscillators. The hermetically
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MGF1601B
Abstract: MGF1601
Contextual Info: < High-power GaAs FET small signal gain stage > MGF1601B S to X BAND / 0.15W non - matched DESCRIPTION The MGF1601B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures
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MGF1601B
Abstract: mitsubishi microwave MGF1601
Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MGF1601B MICROWAVE POWER GaAs FET DESCRIPTION The MGF1601B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic Unit:millimeters
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MGF4919G
Abstract: SP*02N60 SPP11N80 to-220 smd MGF1601 SPW47N60 MGF0905A SPW11N80 SPP11N60 SPP20N60
Contextual Info: МИКРОСХЕМЫ ТРАНЗИСТОРЫ 1 2 ВЫСОКОВОЛЬТНЫЕ ПОЛЕВЫЕ ТРАНЗИСТОРЫ CoolMOS CoolMOS полевые транзисторы Infineon – это новое поколение высоковольтных силовых транзисторов со сверхнизким сопротивлением в открытом состоянии
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spp02n60spp03n60spp04n60spp07n60+13spp11n60spp20n60spw11n60spw20n60spw47n60spp02n80mgf4919gsp*02n60spp11n80to-220 smdmgf1601mgf0905aspw11n80
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MGF1601
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GF1601B MICROWAVE POWER GaAs FET DESCRIPTION The M G F 1 6 0 1 B , m ed iu m -p o w er GaAs FET w ith an N channel S ch o ttk y gate, is designed fo r use in S to X band am plifiers and oscillators. Th e herm etically sealed m etalceram ic package assures m inim um parasitic losses, and
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MGF1200
Abstract: MGF4310 MGF1100 MGF1412 MGF4301 MGF1304 MGF7003 MGF1102 MGF1302 MGF4305A
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> SYMBOL ON PACKAGE EXAMPLE OF SYMBOL ON MICRO DISK PACKAGE W ithou t bottom bar w ith b o tto m bar Blue A p r. O o t. Orange M ay N ov. B lack June D ec. Red July Jan . Green A ug. Feb. Brown S ep. M a r. « L e f t side c h a ra c te r in d ic a te s th e type num ber.
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mgf1102mgf1302mgf1303bmgfi323+14mgf1402bmgfi412bmgf1403bmgf1423bmgfi425bmgfi902bmgf1200mgf4310mgf1100mgf1412mgf4301mgf1304mgf7003mgf4305a
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C42V5964
Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
Contextual Info: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION
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m6sta-005va/wa/samf-156sta-006va/wa/samf-156sra-002va/wa/samf-622sta-004va/wa/sa+16mf-622sta-005va/wa/samf-622sta-006va/wa/samf-622sra-002va/wa/samf-2500sta-002va/wa003va/wa004va/wac42v5964mgf1302 transistormgf1601mgfc1402m57721m67760lch2 marking sot-89 mmic2sc5125mitsubishi m57710-am68776
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MGF4919G
Abstract: MGF4919 mgf1903b MGF0907B 14512H mgf4316g MGFC45V2527 MGF1923 MGFC38V3642 MGF0904A
Contextual Info: lid GaAs FETs •GaAs FET SERIES FOR MICROWAVE-BAND LOW-NOISE AMPLIFIERS <Ta = 25-c> PT If f -6 mA ¡¡m i 100 360 < (GHe) ' (mA) f t 3 10 NFmin max (dB) Qs min (dB! 11 4 1.4 4 1.0 12 2.0 i I MGF1302 Vf l P -6 -6 -6 80 240 3 10 MGF1323 -6 -6 80 240 3 10
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M52777SP
Abstract: M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p
Contextual Info: REFERENCE LIST T ype Page 2 S A 1 115 2SA1235 2 SA1235A 149 2 SC2237 *★ 2SA1282 2SA1282A 103 2 S C 5 1 25 149 2 S C 5 1 68 150 2 SC2320 150 2 SC 2320L 149 2 SC2538 2SA1283 2SA1284 2SA1285 149 2S C 2 6 03 149 2S C 2 6 27 2SA1285A 149 2 SC2628 2SA1286 153 AS 30
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2sa11152sa12352sa1235a2sa1282+162sa1282a2sa12832sa12842sa12852sa1285a2sa1286m52777spm54630pm38881m2m5932057704lm38173m6sf15dxzm34236m37204m854630p
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BUZ90af
Abstract: hv82 MGF4919G-01 MGF4919G MGF2407A-01 BUZ80AF1 6n60 MGF1302-15 SSP 50N06 2n10l
Contextual Info: МИКРОСХЕМЫ 1 ПОЛЕВЫЕ ТРАНЗИСТОРЫ ИМПОРТНЫЕ Наименование 2SJ 103 2SJ 200 2SJ 306 2SJ 307 2SJ 449 2SJ 79 2SK 1023 2SK 1058 2SK 1060 2SK 107 2SK 1082 2SK 1102 2SK 1117 2SK 1118 2SK 1120 2SK 1162 2SK 118 2SK 1198
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o-251aao-247aco-220abpowerso-20+10buz90afhv82mgf4919g-01mgf4919gmgf2407a-01buz80af16n60mgf1302-15ssp 50n062n10l
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