47N60C Search Results

47N60C Price and Stock

Filter by Manufacturer

Select Manufacturer


Infineon Technologies AG SPW47N60C3FKSA1 - Rail/Tube (Alt: SPW47N60C3FKSA1)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas ()	SPW47N60C3FKSA1	Tube	39,981		1	1 $11.21 10 $7.31 100 $6.98 1000 $6.98 10000 $6.98	Buy Now
	SPW47N60C3FKSA1	Bulk			1	1 $14.80 10 $12.85 100 $8.24 1000 $7.51 10000 $7.51	Buy Now
Newark	SPW47N60C3FKSA1	Bulk	2,843		1	1 $14.80 10 $12.85 100 $8.24 1000 $7.51 10000 $7.51	Buy Now
TME	SPW47N60C3FKSA1				30	1 - 10 - 100 $8.01 1000 $8.01 10000 $8.01	Get Quote
EBV Elektronik	SPW47N60C3FKSA1		31,200	14 Weeks	240	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Win Source Electronics	SPW47N60C3FKSA1		30,570			1 - 10 - 100 $3.70 1000 $3.70 10000 $3.70	Buy Now
Infineon Technologies AG SPW47N60CFDFKSA1 - Rail/Tube (Alt: SPW47N60CFDFKSA1)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SPW47N60CFDFKSA1	Tube		8 Weeks	240	1 - 10 - 100 - 1000 $7.72 10000 $7.59	Buy Now
TME	SPW47N60CFDFKSA1				1	1 $14.81 10 $11.80 100 $10.56 1000 $10.56 10000 $10.56	Get Quote
EBV Elektronik	SPW47N60CFDFKSA1			16 Weeks	240	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vyrian	SPW47N60CFDFKSA1		12,326			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG SPW47N60C3 MOSFETs N-Ch 650V 47A TO247-3 CoolMOS C3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	SPW47N60C3		7,950			1 $13.70 10 $7.64 100 $7.27 1000 $7.27 10000 $7.27	Buy Now
Bristol Electronics	SPW47N60C3		525			1 - 10 - 100 - 1000 - 10000 -	Get Quote
TME	SPW47N60C3		128		1	1 $11.36 10 $10.97 100 $10.46 1000 $8.14 10000 $8.14	Buy Now
ComSIT USA	SPW47N60C3		250			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	SPW47N60C3		32,081			1 - 10 $5.11 100 $3.41 1000 $3.41 10000 $3.41	Buy Now
Infineon Technologies AG SPW47N60CFD MOSFETs N-Ch 600V 46A TO247-3 CoolMOS CFD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	SPW47N60CFD		528			1 $14.97 10 $11.40 100 $9.50 1000 $8.47 10000 $8.47	Buy Now
Vyrian	SPW47N60CFD		722			1 - 10 - 100 - 1000 - 10000 -	Get Quote
IXYS Corporation IXKR47N60C5 MOSFETs 47 Amps 600V 0.045 Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXKR47N60C5		265			1 $34.23 10 $25.17 100 $25.17 1000 $23.95 10000 $23.95	Buy Now
TTI	IXKR47N60C5	Tube			300	1 - 10 - 100 - 1000 $23.95 10000 $23.95	Buy Now
Bristol Electronics	IXKR47N60C5		30		1	1 $20.40 10 $18.77 100 $17.95 1000 $17.95 10000 $17.95	Buy Now
TME	IXKR47N60C5		8		1	1 $22.90 10 $18.26 100 $16.39 1000 $16.39 10000 $16.39	Buy Now

Find more 47N60C price and stock on Findchips.com

47N60C Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: IXKR 47N60C5 Advanced Technical Information COOLMOS * Power MOSFET VDSS = 600 V ID25 = 47 A RDS on max = 45 mΩ Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS247TM	Original	47n60c5 isoplus247tm e72873 20080225a	PDF
47n60 Abstract: 47N60C 47N60C5 IXKR E72873 v1207v ixkr47n60c5 Contextual Info: IXKR 47N60C5 Advanced Technical Information CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 47 A RDS on) max = 45 mΩ Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge	Original	47n60c5 isoplus247tm e72873 20080523b +547n60 47n60c ixkr v1207v ixkr47n60c5	PDF
47N60C3 Abstract: IXKH47N60C3 smps high power ID100 065B1 47n60 Contextual Info: ADVANCE TECHNICAL INFORMATION Power MOSFET IXKH 47N60C3 VDSS = 600 V ID25 = 47 A Ω RDS on = 70 mΩ Low RDS(on), High Voltage, Superjunction MOSFET Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VGS Continuous ±20 V ID25 TC = 25°C	Original	47n60c3 id100 o-247 728b1 +5065b1 123b1 ixkh47n60c3 smps high power 47n60	PDF
47N60C Abstract: 47N60 24 volts 100 amperes smps UPS 380v power mosfet 350v 30a to 247 ID100 UPS SIEMENS Contextual Info: ADVANCE TECHNICAL INFORMATION Power MOSFET IXKH 47N60C VDSS = 600 V ID25 = 47 A Ω RDS on = 70 mΩ Low RDS(on), High Voltage, CoolMOSTM Superjunction MOSFET Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VGS Continuous ±20 V ID25	Original	47n60c id100 o-247 728b1 +7065b1 123b1 47n60 24 volts 100 amperes smps ups 380v power mosfet 350v 30a to 247 ups siemens	PDF
47N60C Abstract: 47n60 power mosfet 350v 30a to 247 UPS SIEMENS E72873 ID100 Contextual Info: IXKH 47N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 47 A RDS on) max = 70 mΩ Low RDSon, high VDSS Superjunction MOSFET D TO-247 G G q D E72873 Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS ID25 ID100 TC = 25°C TC = 100°C	Original	47n60c o-247 e72873 id100 +420080523a 47n60 power mosfet 350v 30a to 247 ups siemens	PDF
Contextual Info: IXKR 47N60C5 Advanced Technical Information CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 47 A RDS on) max = 45 m Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS247TM	Original	47n60c5 isoplus247tm e72873 20080523b	PDF
47N60C Contextual Info: IXKH 47N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 47 A RDS on) max = 70 m Low RDSon, high VDSS Superjunction MOSFET D TO-247 G G ﬂ D E72873 Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS ID25 ID100 TC = 25°C TC = 100°C	Original	47n60c o-247 e72873 id100 +120080523a	PDF
AN-CoolMOS-01 Abstract: AN-CoolMOS-04 SPW17N80C2 irfp450 mosfet full bridge transistor SMD v1 MOSFET siemens semiconductor 1988 led smps* ZVT 47n60s5 to247 SPN04N60C2 SPN01N60S5 Contextual Info: Version 1.1 , June 2000 Application Note AN-CoolMOS-07 CoolMOS - Frequently Asked Questions Author: Ilia Zverev Published by Infineon Technologies AG http://www.infineon.com Power Conversion N e v e r s t o p t h i n k i n g CoolMOS - Frequently Asked Questions	Original	an-coolmos-07 room14j1 room1101 an-coolmos-01 +9an-coolmos-04 spw17n80c2 irfp450 mosfet full bridge transistor smd v1 mosfet siemens semiconductor 1988 led smps* zvt 47n60s5 to247 spn04n60c2 spn01n60s5	PDF
SPW47N60C3 Abstract: 47n60c3 Contextual Info: 47N60C3 Preliminary data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated RDS on 0.07 Ω • Extreme dv/dt rated ID 47 A • Ultra low effective capacitances	Original	spw47n60c3 p-to247 q67040-s4491 47n60c3	PDF
47n60cfd Abstract: 47N60 SPW47N60CFD marking code s46 47N60C Contextual Info: 47N60CFD CoolMOS TM Power Transistor Product Summary Features V DS • New revolutionary high voltage technology 600 0.083 Ω R DS on ,max • Intrinsic fast-recovery body diode V ID 46 A • Extremely low reverse recovery charge • Ultra low gate charge	Original	spw47n60cfd pg-to247 q67045a5051 47n60cfd +347n60 marking code s46 47n60c	PDF
47N60C2 Abstract: 2002-08-12 SPW47N60C2 47n60 SDP06S60 TID10 Contextual Info: 47N60C2 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO 247 VDS 600 V • Ultra low gate charge RDS(on) 0.07 Ω • Periodic avalanche rated ID 47 A • Extreme dv/dt rated	Original	spw47n60c2 p-to247 q67040-s4323 47n60c2 +42002-08-12 47n60 sdp06s60 tid10	PDF
47n60cfd Abstract: SPW47N60CFD S47A 47N60C Q67045A5051 JESD22 47N60 Contextual Info: 47N60CFD CoolMOS TM Power Transistor Product Summary Features V DS • New revolutionary high voltage technology 600 0.083 Ω R DS on ,max • Intrinsic fast-recovery body diode V ID 46 A • Extremely low reverse recovery charge • Ultra low gate charge	Original	spw47n60cfd pg-to247 q67045a5051 47n60cfd +4s47a 47n60c jesd22 47n60	PDF
47n60c3 Abstract: SPW47N60C3 SDP06S60 617 300 Contextual Info: 47N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.07 Ω ID 47 A • New revolutionary high voltage technology • Worldwide best R DS(on) in TO 247 • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated	Original	spw47n60c3 p-to247 q67040-s4491 47n60c3 +2sdp06s60 617 300	PDF
47n60cfd Abstract: SPW47N60CFD 47n60 JESD22 Q67045A5051 marking code s46 Contextual Info: 47N60CFD CoolMOSTM Power Transistor Product Summary Features V DS • New revolutionary high voltage technology 600 0.083 Ω R DS on ,max • Intrinsic fast-recovery body diode V ID 46 A • Extremely low reverse recovery charge • Ultra low gate charge	Original	spw47n60cfd pg-to247 q67045a5051 47n60cfd +347n60 jesd22 marking code s46	PDF

7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	ms-013 10-pin 5m-1994 mo-229 +107n60b equivalent 18n50 equivalent ixgh 1499 mosfet smd 4407 ixdd 614 c 547 b w57 bjt transistor r1275ns20l r1271ns12c ixys cs 20-22 mof1 ixtp 220n04t2	PDF
47n60C3 Abstract: 47N60C SPW47N60C3 SDP06S60 Contextual Info: 47N60C3 Final data Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.07 Ω ID 47 A Feature • New revolutionary high voltage technology • Worldwide best R DS(on) in TO 247 • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated	Original	spw47n60c3 p-to247 q67040-s4491 47n60c3 +247n60c sdp06s60	PDF
47N60C2 Abstract: SPW47N60C2 SDP06S60 Contextual Info: 47N60C2 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO 247 VDS 600 V • Ultra low gate charge RDS(on) 0.07 Ω • Periodic avalanche rated ID 47 A • Extreme dv/dt rated	Original	spw47n60c2 p-to247 q67040-s4323 47n60c2 +1sdp06s60	PDF
47n60C3 Abstract: SPW47N60C3 47N60 SDP06S60 Contextual Info: 47N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated RDS on 0.07 Ω • Extreme dv/dt rated ID 47 A • Ultra low effective capacitances	Original	spw47n60c3 p-to247 q67040-s4491 47n60c3 +247n60 sdp06s60	PDF
PEF 24628 Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819 Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by	Original	b192-h6780-g10-x-7600 sp000012954 sp000013610 sp000017969 +13sp000014627 sp000018085 sp000018086 pef 24628 psb 21493 siemens pmb 6610 47n60c3 psb 21553 pmb7725 pef 22628 pmb6610 psb 50505 pmb 6819	PDF
BCM 4336 Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265 Contextual Info: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06	Original	b192-h6780-g9-x-7600 d-81669 vdsl5100i-e vdsl6100i-e +10bcm 4336 2a0565 c2335 2a280z c1740 bipolar transistor transistor a1267 a1273 transistor c2335 r 2b0565 2b265	PDF
47n60c3 Abstract: SPW47N60C3 47N60 SDP06S60 tp 2116 Pulse-10 Contextual Info: 47N60C3 Preliminary data Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on 0.07 Ω • Extreme dv/dt rated ID 47 A •=Ultra low effective capacitances	Original	spw47n60c3 p-to247 q67040-s4491 47n60c3 +447n60 sdp06s60 tp 2116 pulse-10	PDF
47n60c3 Abstract: SPW47N60C3 47N60 SDP06S60 47N60C Contextual Info: 47N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.07 Ω ID 47 A • New revolutionary high voltage technology • Worldwide best R DS(on) in TO 247 • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated	Original	spw47n60c3 p-to247 q67040-s4491 47n60c3 +347n60 sdp06s60 47n60c	PDF
47n60c3 Abstract: 47n60 Q67040-S4491 47N60C 47n60c3 infineon Contextual Info: 47N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.07 Ω ID 47 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 247 P-TO247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated	Original	spw47n60c3 p-to247 q67040-s4491 47n60c3 +347n60 47n60c 47n60c3 infineon	PDF
47n60c3 Abstract: P-TO247 47N60C P-TO-247 SPW47N60C3 47n60c3 infineon 2449 Contextual Info: 47N60C3 Target data sheet Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on) 0.07 Ω	Original	spw47n60c3 p-to247 47n60c3 47n60c +3p-to-247 47n60c3 infineon 2449	PDF

47N60C Search Results

47N60C Price and Stock

Infineon Technologies AG SPW47N60C3FKSA1

Infineon Technologies AG SPW47N60CFDFKSA1

Infineon Technologies AG SPW47N60C3

Infineon Technologies AG SPW47N60CFD

IXYS Corporation IXKR47N60C5

47N60C Datasheets Context Search

47n60

47N60C3

47N60C

47N60C

47N60C

AN-CoolMOS-01

SPW47N60C3

47n60cfd

47N60C2

47n60cfd

47n60c3

47n60cfd

7N60B equivalent

47n60C3

47N60C2

47n60C3

PEF 24628

BCM 4336

47n60c3

47n60c3

47n60c3

47n60c3