E72873
Abstract: 15-06KC5
Contextual Info: FMD 15-06KC5 FDM 15-06KC5 Advanced Technical Information ID25 = 15 A VDSS = 600 V RDS on max = 0.165 Ω CoolMOS 1) Power MOSFET with HiPerDyn ™ FRED Buck and Boost Topologies Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode
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10N60C
Abstract: IXKP10N60C5
Contextual Info: IXKP 10N60C5 CoolMOS 1 Power MOSFET ID25 = 10 A VDSS = 600 V RDS on max = 0.385 Ω ) N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 AB G D S G S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS
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10n60c5o-22020080523b10n60c+1ixkp10n60c5
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47n60
Abstract: 47N60C 47N60C5 IXKR E72873 v1207v ixkr47n60c5
Contextual Info: IXKR 47N60C5 Advanced Technical Information CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 47 A RDS on) max = 45 mΩ Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge
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47n60c5isoplus247tme7287320080523b+547n6047n60cixkrv1207vixkr47n60c5
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Contextual Info: IXKR 47N60C5 Advanced Technical Information CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 47 A RDS on) max = 45 m Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS247TM
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13N60
Abstract: 13n60c5 13n60c L-14045
Contextual Info: IXKP 13N60C5 CoolMOS 1 Power MOSFET ID25 = 13 A VDSS = 600 V RDS on) max = 0.3 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 AB (IXKP) G D S G S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings
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13n60c5o-22020080523b13n60+213n60cl-14045
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