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    13N60 Search Results

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    13N60 Price and Stock

    STMicroelectronics

    STMicroelectronics STD13N60DM2

    - Product that comes on tape, but is not reeled (Alt: 26AH0144)
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    Avnet Americas () STD13N60DM2 Ammo Pack 1
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    STD13N60DM2 Bulk 36 Weeks 2,500
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    Mouser Electronics STD13N60DM2 3,052
    • 1 $2.47
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    Newark () STD13N60DM2 Cut Tape 2,456 1
    • 1 $2.34
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    STD13N60DM2 Tape & Reel 2,456 100
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    TME STD13N60DM2 2,500
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    Ameya Holding Limited STD13N60DM2 7,352
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    Avnet Silica STD13N60DM2 25 Weeks 2,500
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    EBV Elektronik STD13N60DM2 25 Weeks 2,500
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    STMicroelectronics STF13N60M2

    - Bulk (Alt: 45AC7557)
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    Avnet Americas () STF13N60M2 Bulk 1
    • 1 $2.50
    • 10 $1.53
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    STF13N60M2 Tube 24 Weeks 2,000
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    Mouser Electronics STF13N60M2 2,936
    • 1 $2.28
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    Newark STF13N60M2 Bulk 245 1
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    Bristol Electronics () STF13N60M2 550
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    STF13N60M2 497 1
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    TME STF13N60M2 183 1
    • 1 $1.87
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    ComSIT USA STF13N60M2 1,850
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    Avnet Silica STF13N60M2 3,500 25 Weeks 50
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    EBV Elektronik STF13N60M2 25 Weeks 50
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    Win Source Electronics STF13N60M2 70,233
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    STMicroelectronics STP13N60M2

    - Bulk (Alt: 45AC7691)
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    Avnet Americas STP13N60M2 Bulk 1
    • 1 $2.22
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    Mouser Electronics STP13N60M2 8
    • 1 $2.38
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    Newark STP13N60M2 Bulk 19 1
    • 1 $2.22
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    Bristol Electronics STP13N60M2 750 1
    • 1 $1.89
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    TME STP13N60M2 90 1
    • 1 $1.92
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    Avnet Silica STP13N60M2 350 25 Weeks 50
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    EBV Elektronik STP13N60M2 25 Weeks 50
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    STMicroelectronics STP13N60DM2

    PTD HIGH VOLTAGE - Rail/Tube (Alt: STP13N60DM2)
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    Avnet Americas STP13N60DM2 Tube 1,000
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    STMicroelectronics STU13N60M2

    - Rail/Tube (Alt: STU13N60M2)
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    Avnet Americas STU13N60M2 Tube 26 Weeks 3,000
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    Mouser Electronics STU13N60M2 2,161
    • 1 $2.26
    • 10 $1.03
    • 100 $0.92
    • 1000 $0.72
    • 10000 $0.64
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    Ameya Holding Limited STU13N60M2 2,981
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    Avnet Silica STU13N60M2 6,675 27 Weeks 75
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    EBV Elektronik STU13N60M2 27 Weeks 75
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    13N60 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: IXKP 13N60C5M COOLMOS * Power MOSFET ID25 = 6.5 A VDSS = 600 V RDS on max = 0.3 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions


    Original
    13n60c5mo-22020080310b PDF

    SGW13N60UFD

    Contextual Info: SGW 13N60UFD FE A TU R ES N-CHANNEL IG B T D2-PAK * High Speed Switching * Low Saturation Voltage : V CE sat = 1.95 V (@ lc=6.5A) * High Input Impedance *CO-PAK, IGBT with FRD : Trr = 37nS (typ.) A P P LIC A TIO N S * * * * * AC & DC Motor controls General Purpose Inverters


    OCR Scan
    sgw13n60ufd PDF

    13n60c

    Abstract: 13n60
    Contextual Info: IXKP 13N60C5 CoolMOS 1 Power MOSFET ID25 = 13 A VDSS = 600 V RDS on) max = 0.3 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 AB G D S G S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS


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    13n60c5o-22020090209c13n60c+113n60 PDF

    MA660

    Contextual Info: Advanced Technical Information COOLMOS * Power MOSFET IXKP 13N60C5M ID25 = 6.5 A VDSS = 600 V RDS on max = 0.3 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Conditions


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    13n60c5mo-220ma660 PDF

    Contextual Info: IXKH 13N60C5 IXKP 13N60C5 COOLMOS * Power MOSFET ID25 = 13 A VDSS = 600 V RDS on max = 0.3 W N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-247 AD (IXKH) D G G D S S  D(TAB) TO-220 AB (IXKP) G D S Features MOSFET Symbol


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    13n60c5o-247o-22020080310a PDF

    13n60c

    Abstract: 13N60
    Contextual Info: IXKP 13N60C5M CoolMOS 1 Power MOSFET ID25 = 6.5 A VDSS = 600 V RDS on) max = 0.3 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions


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    13n60c5mo-22020090209d13n60c+113n60 PDF

    13N60

    Abstract: 13N60C5M
    Contextual Info: IXKP 13N60C5M CoolMOS 1 Power MOSFET ID25 = 6.5 A VDSS = 600 V RDS on) max = 0.3 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions


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    13n60c5mo-22020080523c13n60 PDF

    13N60C5

    Abstract: 13N60 13n60c
    Contextual Info: IXKH 13N60C5 IXKP 13N60C5 Advanced Technical Information ID25 = 13 A = 600 V VDSS RDS on max = 0.3 Ω CoolMOS Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D S D (TAB) S TO-220 AB (IXKP)


    Original
    13n60c5o-247o-22013n60+113n60c PDF

    SGW13N60UF

    Contextual Info: SGW 13N60UF N-CHANNEL IG B T FE A TU R ES * High Speed Switching * Low Saturation Voltage : V CE sat = 1.95 V (@ lc=6.5A) * High Input Impedance * Short Circuit Rated : Min. 2uS(@ Vge=15V) A P P LIC A TIO N S * * * * * AC & DC Motor controls General Purpose Inverters


    OCR Scan
    sgw13n60uf PDF

    Contextual Info: Advanced Technical Information COOLMOS * Power MOSFET IXKP 13N60C5M ID25 = 6.5 A VDSS = 600 V RDS on max = 0.3 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Symbol


    Original
    13n60c5mo-22020070704a PDF

    Contextual Info: Advanced Technical Information COOLMOS * Power MOSFET IXKP 13N60C5M ID25 = 6.5 A VDSS = 600 V RDS on max = 0.3 W Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-220 FP D G D S G S Features MOSFET Conditions


    Original
    13n60c5mo-220 PDF

    Contextual Info: Advanced Technical Information IXKP 13N60C5M ID25 = 6.5 A VDSS = 600 V RDS on max = 0.3 Ω CoolMOS Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Conditions


    Original
    13n60c5mo-220 PDF

    Contextual Info: IXKP 13N60C5M CoolMOS 1 Power MOSFET ID25 = 6.5 A VDSS = 600 V RDS on) max = 0.3 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions


    Original
    13n60c5mo-22020090209d PDF

    13N60

    Abstract: 13n60c5 13n60c L-14045
    Contextual Info: IXKP 13N60C5 CoolMOS 1 Power MOSFET ID25 = 13 A VDSS = 600 V RDS on) max = 0.3 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 AB (IXKP) G D S G S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings


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    13n60c5o-22020080523b13n60+213n60cl-14045 PDF

    13n60

    Abstract: 13N60M2 STP13N60 STD13N60M2 STP13N60M2 STU13N60M2 STW13N60
    Contextual Info: 13N60M2, 13N60M2, 13N60M2, 13N60M2 N-channel 600 V, 0.318 Ω typ., 12 A MDmesh II Plus low Qg Power MOSFET in DPAK, TO-220, IPAK and TO-247 packages Datasheet − preliminary data Features TAB TAB Order codes VDS @ TJmax RDS on max 3 ID 13N60M2


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    std13n60m2stp13n60m2stu13n60m2stw13n60m2+6o-220o-24713n6013n60m2stp13n60stw13n60 PDF

    13N60

    Abstract: 13N60ES 13N60E TO-220F JEDEC
    Contextual Info: DATE DRAWN Oct.-10-'08 CHECKED Oct.-10-'08 CHECKED Oct.-10-'08 NAME APPROVED DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor


    Original
    fmp13n60esms5f7241h04-004-05h04-004-03+413n6013n60es13n60eto-220f jedec PDF

    13N60E

    Abstract: Diode SMD SJ 65a SMD Diode KE Sj 07 DIODE SMD fmc1 fuji smd lot code 13N60 Diode type SMD marking SJ Diode type SMD marking SJ 09 Diode type SMD SJ 09
    Contextual Info: Device Name DATE DRAWN Jun.-12-'07 CHECKED Jun.-12-'07 CHECKED Jun.-12-'07 NAME : APPROVED DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor


    Original
    fmi13n60efmc13n60efmb13n60ems5f6870+12ms5f687specificationh04-004-0313n60ediode smd sj 65asmd diode kesj 07 diode smdfmc1fuji smd lot code13n60diode type smd marking sjdiode type smd marking sj 09diode type smd sj 09 PDF

    SGW13N60UFD

    Contextual Info: 13N60UFD IGBT CO-PAK FEATURES * High Speed Switching * Low Saturation Volatge : VCE sat = 2.2 V (at lc=6.5A) * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 37nS (Typ) APPLICATIONS * * * * * AC & DC Motor controls General Purpose Inverters Robotics , Servo Controls


    OCR Scan
    sgw13n60ufd PDF

    fma13n60e

    Contextual Info: DATE DRAWN Jun.-5-'07 CHECKED Jun.-5-'07 CHECKED Jun.-5-'07 NAME APPROVED DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor


    Original
    ms5f6869fma13n60eh04-004-05h04-004-03 PDF

    Contextual Info: 13N60M2, 13N60M2 N-channel 600 V, 0.35 Ω typ., 11 A MDmesh II Plus low Qg Power MOSFETs in D2PAK and DPAK packages Datasheet − production data Features Order codes VDS @ TJmax RDS on max ID 650 V 0.38 Ω 11 A 13N60M2 TAB 13N60M2 3 3 D 2PAK


    Original
    stb13n60m2std13n60m2docid024569 PDF

    13N60M2

    Abstract: STF13N60M2 STFI13N60M2 13N60 *13n60
    Contextual Info: 13N60M2, 13N60M2 N-channel 600 V, 0.318 Ω typ., 12 A MDmesh II Plus low Qg Power MOSFET in TO-220FP and I2PAKFP packages Datasheet − preliminary data Features Order codes 13N60M2 13N60M2 VDS @ TJmax RDS on max ID 650 V 0.360 Ω 12 A 3


    Original
    stf13n60m2stfi13n60m2o-220fpo-281+213n60m213n60 PDF

    13N60

    Abstract: 13n60e ic MARKING QG ISO humidifier standards symbols
    Contextual Info: DATE DRAWN Feb.-05-'08 CHECKED Feb.-05-'08 CHECKED Feb.-05-'08 NAME APPROVED DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor


    Original
    fmv13n60ems5f7022h04-004-05h04-004-03+413n6013n60eic marking qgiso humidifier standards symbols PDF

    13n60es

    Abstract: 13N60
    Contextual Info: DATE DRAWN Oct.-10-'08 CHECKED Oct.-10-'08 CHECKED Oct.-10-'08 NAME APPROVED DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor


    Original
    fmh13n60esms5f7244h04-004-05h04-004-03+213n60es13n60 PDF

    STW13N60

    Abstract: STD13N60M2
    Contextual Info: 13N60M2, 13N60M2, 13N60M2 N-channel 600 V, 0.35 Ω typ., 11 A MDmesh II Plus low Qg Power MOSFETs in TO-220, IPAK and TO-247 packages Datasheet − production data TAB Features TAB Order codes 3 VDS @ TJmax RDS on max ID 650 V 0.38 Ω 11 A 2 1


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    stp13n60m2stu13n60m2stw13n60m2o-220+3o-247stw13n60std13n60m2 PDF