FMC1 Search Results

FMC141501-01

Abstract: k-band amplifier
Contextual Info: FMC141501-01 Ku, K-Band Power GaAs Modules FEATURES • • • • • • High Output Power: P1dB = 31dBm Typ. High Gain: G1dB = 18.0dB(Typ.) Low In/Out VSWR Broad Band: 14.4 ~ 15.3GHz Impedance Matched Zin/Zout = 50W Hermetically Sealed Package (12 X 15 X 3.5mm)

FMC1819LN-02

Abstract: Fujitsu Ku microwave
Contextual Info: FMC1819LN-02 Ku, K-Band Power GaAs Modules FEATURES • • • • • • • High Output Power: P1dB = 12dBm Typ. High Gain: G1dB = 13.5dB(Typ.) Low In/Out VSWR Low Noise: NF = 2.5dB (Typ.) Broad Band: 18.7 ~ 19.7GHz Impedance Matched Zin/Zout = 50W Hermetically Sealed Package (12 X 15 X 3.5mm)

FMC16N50E

Contextual Info: FMC16N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching

FMC1819P1-01

Contextual Info: FMC1819P1-01 Ku, K-Band Power GaAs Modules FEATURES • • • • • • High Output Power: P1dB = 21dBm Typ. High Gain: G1dB = 13.5dB(Typ.) Low In/Out VSWR Broad Band: 18.7 ~ 19.7GHz Impedance Matched Zin/Zout = 50W Hermetically Sealed Package (12 X 15 X 3.5mm)

102AH

Contextual Info: CHIP FUSES; RECTANGULAR TYPE KAMAYA OHM FMC16 Option Code :AH/In-rush Withstand •Features 1. High anti pulse performance. 2. Pb*1, Halogen*2 and Antimony*3 free product *1 Pb 1000ppm *2 Cl or Br *3 Sb2O3 900ppm, Cl+Br 1500ppm 900ppm HF HF 3. Certified UL, c-UL.

Contextual Info: P, ,f?TQI, FMC141501-01 r UJ11jU Ku, K-Band Power GaAs Modules FEATURES • • • • • • High Output Power: P-i ^ b = 31dBm Typ. High Gain: G-ih r = 18.0dB(Typ.) Low In/Out VSWR Broad Band: 14.4 ~ 15.3GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package (12 X 15 X 3.5mm)

Contextual Info: FMC1819P1-01 Ku , K-Band Power GaAs Modules I_ ABSOLUTE MAXIMUM RATINGS Ambient Temperature Ta = 25 C Rating Unit DC Input Voltage Vd D 10 V DC Input Voltage

dual transistor marking code d12

Abstract: 2305 transistor 7636 transistor UMD12N fmc7a DTA143T DTA144E DTC143T DTC144E SC-75A
Contextual Info: U M C 1N / FM C 1A Transistors U M D 12N / FM C 7A Digital Transistor Dual Digital Transistors for Power Management UMC1N / FMC1A I •F e a tu r e s •A b s o lu te maximum ratings ( T a = 2 5 t i) 1 ) D T A 1 4 3 T a n d D T C 1 4 3 T tra n s is to rs a re h o u sed

fmc11n60

Contextual Info: FMC11N60E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching

FMC1819LN-02

Abstract: FMC1819LN02
Contextual Info: FMC1819LN-02 FUJITSU Ku, K-Band Power GaAs Modules FEATURES • • • • • • • High Output Power: P-|<jB = 12dBm Typ. High Gain: G-ih r = 13.5dB(Typ.) Low In/Out VSWR Low Noise: NF = 2.5dB (Typ.) Broad Band: 18.7 ~ 19.7GHz Impedance Matched Zin/Zout = 50Q

Contextual Info: UMC1N / FMC1A Transistors Power management dual digital transistors UMC1N / FMC1A (3) R1 (4) (5) R1 0.1Min. ROHM : UMT5 EIAJ : SC-88A 1.3 Each lead has same dimensions R1 C1 C1 Code TR T148 Basic ordering unit (pieces) 3000 3000 2.9 UMT5 Marking 1.1 (4)

Contextual Info: CHIP FUSES; RECTANGULAR TYPE KAMAYA OHM FMC16 Option Code :AH/In-rush Withstand •Features 1. High anti pulse performance. 2. Pb*1, Halogen*2 and Antimony*3 free product *1 Pb 1000ppm *2 Cl or Br *3 Sb2O3 900ppm, Cl+Br 1500ppm 900ppm HF HF 3. Certified UL, c-UL.

Contextual Info: FMC10N60E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching

FMC141401-02

Contextual Info: Fujitsu FMC141401-02 ABSOLUTE M A X IM U M R A TIN G S Ambient Temperature Ta = 25°C Item Symbol Rating U nit ^DD 12 V DC Inp ut Voltage DC Input Voltage -7 ^GG Input Power ^in Storage Temperature Operating Case Temperature V 20 dBm T stg -5 5 ~ +125 °C

32VDC

Contextual Info: CHIP FUSES; RECTANGULAR TYPE KAMAYA OHM FMC16 Option Code : AB/Low Ohm & Fast Acting •Features 1. Suitable for over-current protection of the circuit of miniature portable equipment. 2. Low internal resistance compared with FCC/FHC16 AB series for low power consumption and voltage dropping.

FHC16

Contextual Info: CHIP FUSES; RECTANGULAR TYPE KAMAYA OHM FMC16 Option Code : AB/Low Ohm & Fast Acting •Features 1. Suitable for over-current protection of the circuit of miniature portable equipment. 2. Low internal resistance compared with FCC/FHC16 AB series for low power consumption and voltage dropping.

FMC1 T148

Abstract: NPN/TZ-82
Contextual Info: Is "7 > > X $ /Transistors FMC1 PNP/NPN > 'J =J > V - y ' s ' J X Z • ■ X ' i -y ^-IHIES/Switching Circuit Epitaxial Planar Dual Mini-Mold PNP/NPN Silicon Transistor • 2-fliSCO 2 \ t i £ / Dimens'ons Unit : mm) K A y t y - 'JT° 1) X - A " - 5

FMC1819C6-02

Contextual Info: FMC1819C6-02 FUJITSU Ku, K-Band Power GaAs Modules FEATURES • • • • • • High Output Power: P-i ^ b = 18dBm Typ. High Gain: G-ih r = 14.5dB(Typ.) Low In/Out VSWR Broad Band: 18.7 ~ 19.7GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package (12 X 15 X 3.5mm)

FMC16N50E

Abstract: DT78K
Contextual Info: FMC16N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching

ET5126-FMC1S

Abstract: FAT32 fat16 SDHC ET5126 SDHC data sheet FAT-32
Contextual Info: ET5126-FMC1S General Description The ET5126-FMC1S is a high-performance microprocessor. The software/hardware co-designed architecture enables high performance while maintaining simplicity and flexibility that are critical for embedded applications. Features

FMC1718LN-02

Contextual Info: FMC1718LN-02 ku , k-tìand Pow er GaAs Modules ABSOLUTE MAXIMUM RATINGS Am bient Tem perature Ta = 25 C Symbol Rating Unit DC Input Voltage VDD 10 V DC Input Voltage vgg -7 V Pin -1.5 dBm CO -55 t o +125 °C T3 Parameter -55 to +85 °C —1 Cfl—1 Input Power

FMC141401-02

Abstract: FMC1414P1-02 FMC1819P5-01 FMC2223P1-02 FMC1819l FMC141501-01 FMC1718P5-01
Contextual Info: Ku/K-BAND POWER MODULES PldB TYP. dB GldB TYP. (dB) FMC1414P1-02 21 FMC141401-02 Part Number NF TYP. (dB) f (GHz) Vdd/Vg G (V) (mA) Package Type 24.0 14.0-14.5 10 150 GA 31 18.0 14.0-14.5 10/-5 850 GA FMC141501-01 31 18.0 14.4-15.3 10/-5 850 GA FMC1718IN-02

electric bike motor

Abstract: electric bike FMC16100 2 wheeler PI control bldc motor speed control
Contextual Info: Electronic Bike LEV - Light Electric Vehicle Functionality with the Z8 Encore! MC TB000901-0307 FMC16100 MCU Reference Design Features: Hall sensor based control for BLDC motor, which ensures high starting torque and good speed regulation while starting.

current source inverter

Abstract: ac to dc converter using space vector modulation clarke DC motor control dc ac inverter reference design op 20MHZ FMC16100 Z8FMC16100 pwm INVERTER 3 phase ac motor vector control motor microcontroller bldc 3 phase 2 speed soft start motor control diagram
Contextual Info: Motor Control Solution Z8 Encore! MC 8-bit Microcontroller Only 8-bit MCU with Vector Control Ability MOTOR TYPES COMMONLY USED • 3 Phase AC Induction • Brushless DC BLDC VECTOR CONTROL FMC16100 Series MCU FEATURES THAT SEPARATE US FROM THE REST • 8-channel 2.5µs A/D Converter allows accurate current sampling