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IXYS Corporation


IXYS Corporation IXKC25N80C Transistor: N-MOSFET; unipolar; 800V; 25A; ISOPLUS220™; 550ns
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IXKC25N80C				1	1 $13.21 10 $9.41 100 $9.41 1000 $9.41 10000 $9.41	Get Quote
IXYS Corporation IXKR25N80C Transistor: N-MOSFET; unipolar; 800V; 25A; 250W; ISOPLUS247™
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IXKR25N80C				1	1 $29.34 10 $23.29 100 $20.94 1000 $20.94 10000 $20.94	Get Quote

25N80C Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
CoolMOS Power Transistor Abstract: POWER MOSFET 4600 UPS SIEMENS 25N80C Contextual Info: Power MOSFET ISOPLUS220TM IXKC 25N80C Electrically Isolated Back Surface Low RDS on , High Voltage, CoolMOSTM Superjunction MOSFET VDSS = 800 V ID25 = 20 A Ω RDS(on) = 150 mΩ Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	isoplus220tm 25n80c e153432 065b1 +5728b1 123b1 coolmos power transistor power mosfet 4600 ups siemens	PDF
Contextual Info: Power MOSFET ISOPLUS220TM IXKC 25N80C Electrically Isolated Back Surface Low RDS on , High Voltage, CoolMOSTM Superjunction MOSFET VDSS = 800 V = 25 A ID25 Ω RDS(on) = 150 mΩ Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	isoplus220tm 25n80c isoplus220lv 728b1 +2065b1 123b1	PDF
25N80C Contextual Info: IXKC 25N80C COOLMOS * Power MOSFET ISOPLUSTM Package ID25 = 25 A VDSS = 800 V RDS on max = 150 mΩ N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Electrically Isolated Back Surface ISOPLUS220 D G G D S S E72873 Features MOSFET Symbol Conditions	Original	25n80c isoplus220 e72873	PDF
IXKR25N80C Contextual Info: IXKR 25N80C Advanced Technical Information COOLMOS * Power MOSFET ID25 = 25 A VDSS = 800 V RDS on = 125 mW in ISOPLUS247TM Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base ISOPLUS 247TM D * G E153432	Original	25n80c 125mw 247tm isoplus247tm +4e153432 isoplus247 o-247 ixkr25n80c	PDF
CoolMOS Power Transistor Abstract: ISOPLUS247 IXKR25N80C Contextual Info: Advanced Technical Information VDSS CoolMOS Power MOSFET in ISOPLUS247TM Package RDS on 25 A 125 mΩ Ω 800 V IXKR 25N80C N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base ID25 D G *) S ISOPLUS 247TM E153432	Original	isoplus247tm 25n80c 247tm e153432 +3coolmos power transistor isoplus247 ixkr25n80c	PDF
power switching Abstract: ISO264 ISO264TM ID90 Contextual Info: ADVANCE TECHNICAL INFORMATION CoolMOSTM Power MOSFET IXKG 25N80C ISO264TM Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , High Voltage MOSFET Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VGS Continuous ±20	Original	25n80c iso264tm 728b1 065b1 +4123b1 power switching iso264 id90	PDF
25N80C Abstract: 25n80 E72873 mosfet b4 Contextual Info: IXKC 25N80C CoolMOS 1 Power MOSFET ISOPLUSTM Package ID25 = 25 A VDSS = 800 V RDS on) max = 150 mΩ N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Electrically Isolated Back Surface D ISOPLUS220 G G D q S S isolated back surface E72873 Features	Original	25n80c isoplus220 e72873 20080526a +225n80 mosfet b4	PDF
25N80C Abstract: "VDSS 800V" mosfet ISOPLUS247 25n80 Contextual Info: IXKR 25N80C Advanced Technical Information CoolMOS 1 Power MOSFET ID25 = 25 A VDSS = 800 V RDS on) = 125 mW in ISOPLUS247™ Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base ISOPLUS 247™ D G E153432	Original	25n80c 125mw isoplus247tm 247tm +5e153432 20080526a vdss 800v" mosfet isoplus247 25n80	PDF
25n8 Contextual Info: IXKC 25N80C CoolMOS 1 Power MOSFET ISOPLUSTM Package ID25 = 25 A VDSS = 800 V RDS on) max = 150 m N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Electrically Isolated Back Surface D ISOPLUS220 G G D ﬂ S S isolated back surface E72873 Features	Original	25n80c isoplus220 e72873 0080526a +220080526a 25n8	PDF
Contextual Info: IXKR 25N80C Advanced Technical Information CoolMOS 1 Power MOSFET ID25 = 25 A VDSS = 800 V RDS on) = 125 mW in ISOPLUS247™ Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base ISOPLUS 247™ D G G E53432	Original	25n80c isoplus247 e153432 20080526a	PDF
Contextual Info: ADVANCE TECHNICAL INFORMATION CoolMOS Power MOSFET ISOPLUS220TM IXKC 25N80C Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , High Voltage MOSFET Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VGS Continuous	Original	isoplus220tm 25n80c 220tm	PDF
Contextual Info: ADVANCE TECHNICAL INFORMATION CoolMOS Power MOSFET ISOPLUS220TM IXKC 25N80C Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , High Voltage MOSFET Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VGS Continuous	Original	isoplus220tm 25n80c 25vds 728b1 +2065b1 123b1	PDF
100N055 Abstract: 20n60c 200N055 60n10 45n80 160N075 100n05 75N60 02N5 01N100D Contextual Info: Power MOSFETs N-Channel Depletion-Mode Type Package style DSS max. Tc = 25-C A Vos = 0V n pF 500 0.20 1000 0.10 30 110 1 20 1 20 ► New ► IXTP 02N50D ► IXTP 01N100D pF Outline drawings on page 91-100 w Fig. 3 TO-220AB Weight = 4 g 25 25 G = G a te. D = Drain	OCR Scan	02n50d 01n100d o-220ab o-247 +1220n60c 40n60c 75n60c 45n80c 100n055 200n055 60n10 45n80 160n075 100n05 75n60 02n5	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	ms-013 10-pin 5m-1994 mo-229 +107n60b equivalent 18n50 equivalent ixgh 1499 mosfet smd 4407 ixdd 614 c 547 b w57 bjt transistor r1275ns20l r1271ns12c ixys cs 20-22 mof1 ixtp 220n04t2	PDF