02N5 Search Results

TO-220AD

Contextual Info: High Voltage MOSFET IXTP 02N50D VDSS ID25 N-Channel, Depletion Mode RDS on = 500 V = 200 mA = 30 Ω Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20

02N5

Abstract: IXTP 02N50D
Contextual Info: High Voltage MOSFET N-Channel, Depletion Mode IXTP 02N50D IXTU 02N50D IXTY 02N50D VDSS = 500 V ID25 = 200 mA RDS on = 30 Ω Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 500 V VDGX TJ = 25°C to 150°C 500 V VGS Continuous

TO-220AD

Abstract: 02N5 IXTP 02N50D depletion MOSFET
Contextual Info: Advance Technical Information High Voltage MOSFET IXTP 02N50D VDSS ID25 N-Channel, Depletion Mode RDS on Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25

02N5

Contextual Info: 02N5817 THRU 02N5819 LOW Vf SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 40 Volts CURRENT 0.2 Ampere FEATURES * * * * * * Low switching noise Low forward voltage drop High current capability High switching capability High surge capabitity High reliability

100N055

Abstract: 20n60c 200N055 60n10 45n80 160N075 100n05 75N60 02N5 01N100D
Contextual Info: Power MOSFETs N-Channel Depletion-Mode Type Package style DSS max. Tc = 25-C A Vos = 0V n pF 500 0.20 1000 0.10 30 110 1 20 1 20 ► New ► IXTP 02N50D ► IXTP 01N100D pF Outline drawings on page 91-100 w Fig. 3 TO-220AB Weight = 4 g 25 25 G = G a te. D = Drain

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 02N50 Preliminary Power MOSFET 0.2A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 02N50 is an N-channel MOSFET, it uses UTC’s advanced technology to provide the customers with high breakdown voltage  FEATURES * RDS on =75Ω @VGS=10V, ID=0.15A

Contextual Info: 02N5817 THRU 02N5819 LOW Vf SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 40 Volts CURRENT 0.2 Ampere FEATURES * * * * * * Low switching noise Low forward voltage drop High current capability High switching capability High surge capabitity High reliability

IXTD24P20

Abstract: depletion mode mosfet 01N100D-1M DEPLETION P-Channel Depletion Mosfet IXTH36P10 IXTD24P20-7B IXTD36P10-5B P-Channel Depletion Mosfets IXTH50P10
Contextual Info: Chip-Shortform2004.pmd N-Channel Depletion Mode MOSFET Type VDSS max. RDSon max. Chip type Chip size dimensions Source bond wire recommended Equivalent device data sheet 12 V Ω mm mils IXTD 02N50D-1M 500 30 1M 1.96 x 1.68 77 x 66 3 mil x 1 IXTP 02N50D IXTD 01N100D-1M

Contextual Info: RoHS C om plian t SUPER LOW Vf SCHOTTKY RECTIFIERS PLASTIC MATERIAL HAS UL 94V-0 CLASSIFICATION o o OPERATING AND STORAGE TEMPERATURE RANGE -55 C to +150 C TYPE Maximum Peak Reverse Voltage PRV VPK Maximum Average Rectified Current @ Half-Wave Resistive Load

cn/A/U 237 BG

Contextual Info: www.avx.com AVX RF Microwave Products Version 15.1 AVX Microwave Ask The World Of Us As one of the world’s broadest line multilayer ceramic chip capacitor suppliers, and a major Thin Film RF/Microwave capacitor, inductor, directional coupler and low pass filter and

02N50C3

Abstract: 02N5 Q67040-S4570 SPD02N50C3 TRANSISTOR SMD MARKING CODE 490
Contextual Info: 02N50C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 3 Ω ID 1.8 A • New revolutionary high voltage technology • Ultra low gate charge P-TO252-3-1 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances

AFM02N8-32

Abstract: 02N5 02N50 AF035P1-00
Contextual Info: MMICs GaAs FETs S p i ?' Low Noise and General Purpose FETs Ta = +25°C Fmin Bias Power Bias Vds Ids (V) (mA) P1 dB (dBm) Thermal Resistance (C/W) Max Dissipated Power (mW) Package Style 30 13.0 260 400 Chip 2 30 11.5 260 400 Chip 15.0 4 30 14.5 260 400

02N5

Abstract: Al016 AL05A AL05B7N15 AL023130N AL05A1N65KTR
Contextual Info: Air Core RF Inductors AL Series GENERAL DESCRIPTION AVX Air Core RF Inductors, part of the wound air core inductor family, are ideal for RF circuits, broadband I/O filtering, frequency selection, or impedance matching. The air core inductor provides better performance

02N5

Abstract: HP8720 AL05A1N65KTR
Contextual Info: Air Core RF Inductors AL Series GENERAL DESCRIPTION AVX Air Core RF Inductors, part of the wound air core inductor family, are ideal for RF circuits, broadband I/O filtering, frequency selection, or impedance matching. The air core inductor provides better performance

cn/A/U 237 BG

Contextual Info: www.avx.com AVX RF Microwave Products Version 13.11 AVX Microwave Ask The World Of Us As one of the world’s broadest line multilayer ceramic chip capacitor suppliers, and a major Thin Film RF/Microwave capacitor, inductor, directional coupler and low pass filter and

BCM 4336

Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
Contextual Info: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06

02N50C3

Abstract: 02N50 02N5 SPD02N50C3 Q67040-S4570
Contextual Info: 02N50C3 Final data Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 3 Ω ID 1.8 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO252-3-1 • Extreme dv/dt rated • Ultra low effective capacitances

1N5411

Abstract: npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756
Contextual Info: for HF-VHF-UHF-Microwave Applications RF Power Transistors R C A R F Power Transistors for 12.5 Volt Operation Hermetic Ceramic-Metal Stripline Package Flange TYPICAL OUTPUT POWER — WATTS 'j Hermetic Ceramic-Metal Coaxial Package (Large) Hermetic Ceramic-Metal