DEPLETION Search Results

Contextual Info: TPS9103 POWER SUPPLY FOR GaAs POWER AMPLIFIERS SLVS131A - JULY 1996 Charge Pump Provides Negative Gate Bias for Depletion-Mode GaAs Power Amplifiers GATE_BIAS □ = 10 VCC C1c i+ BATTJN BATTJN BATTJN PGP PG GND 2 3 4 5 6 7 8 9 10 135-mli High-Side Switch Controls Supply

DN2450

Abstract: Voltage to Current Converters marking L2 package SOT A0208
Contextual Info: Supertex inc. DN2450 N-Channel Depletion-Mode Vertical DMOS FETs Features ►► ►► ►► ►► ►► ►► General Description High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage

IGBT THEORY AND APPLICATIONS 400V

Abstract: TEK 370A tesec IGBT THEORY AND APPLICATIONS bj transistor igbt high voltage pnp transistor 700v jfet curve tracer short circuit tracer schematic bipolar transistor tester AN10861
Contextual Info: Application Note AN-1086 BVCES Testing Considerations for Ultra-thin wafer B B Depletion Stop Trench IGBTs By Chiu Ng, Al Diy, Alberto Fernandez, Vijay Bolloju Table of Contents Page

d2020e

Contextual Info: SILICONIX INC 18E I Ô5S473S 0014053 fy S iG c o n ix JLm in c o rp o ra te d ND2020 SERIES "T-2.7-7. S N-Channel Depletion-Mode MOS Transistors TO-92 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN PRODUCT SUMMARY PART NUMBER 1 • V BR)DSV fDS(ON) (V) (« ) Id (A)

DN2620

Contextual Info: DN2620 DN2624 Advanced Information N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information Order Num ber / Package BV dsx / B^DGX ^DS ON Idss (max) (min) TO-92 DICE 200V 4.0Q 600mA DN2620N3 DN2620ND 240V 4.0Q 600mA DN2624N3 DN2624ND Advanced DMOS Technology

01N100D

Abstract: high voltage mosfet n-channel
Contextual Info: High Voltage MOSFET N-Channel, Depletion Mode IXTP 01N100D VDSS ID25 RDS on Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C;TJ = 25°C to 150°C

nd2410l

Contextual Info: ND2406L, ND2410L N-Channel Depletion-Mode MOS Transistors JBÜSKSS TO-92 TO-226AA PRODUCT SUMMARY T PART NUMBER V (BR)DSS ND2406L 240 6 0.23 ND2410L 240 10 0.18 BOTTOM VIEW >d (A) 1 SOURCE 2 GATE 3 DRAIN Performance Curves: VDDV24 ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)

d150n

Contextual Info: LND150 N-Channel Depletion-Mode MOSFET Ordering Information BVdsx/ R d S ON Order Number / Package I dss BVdgx (max) (min) TO-92 TO-243AA* Die 500V 1.0KQ 1.0m A LN D 150N 3 LN D 150N 8 LN D 150N D * Same as SOT-89. For carrier tape reels specify P023 for 1,000 units or P024 for 2,000 units.

pj 809

Contextual Info: Product Nomenclature and Ordering Information DMOS Proprietary Products RB HI-REL RB = MIL-STD-883 for Arrays SX = Similar to JANTX SXV = Similar to JANTXV FAMILY TYPE D = Vertical DepletionMode DMOS Discretes L = Lateral DMOS Discretes T = Low Threshold DMOS

Contextual Info: Temic BF543 S e m i c o n d u c t o r s N-Channel MOS-Fieldeffect Triode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. ^ Applications High frequency stages up to 300 MHz. Features • Integrated gate protection diode •

S525T

Contextual Info: Temic S525T S e m i c o n d u c t o r s N-Channel MOS-Fieldeffect Triode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. ^ “ Applications High frequency stages up to 300 MHz Features • integrated gate protection diode

GI 536 DIODES

Contextual Info: Temic S888T S e m i c o n d u c t o r s N-Channel Dual-Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. ^ Applications Input- and mixer stages in low voltage UHF- and VHFtuner with only 5 V supply voltage and in cordless phones.

ND2410L

Contextual Info: Ä1«ssslä VDDV SERIES DIE N-Channel Depletion-Mode MOS Transistors VDDV1CHP* VDDV2CHP* ND2406L ND2410L ‘ Meets or exceeds specification for all part numbers listed below G ate Pad 0-005 0.127 0 007 (0.178) M* «4 p*« tl» c i U :R *«fl:»iag f u t a _f« * « a « B * S

Contextual Info: Temic BF995 S e m i c o n d u c t o r s N-Channel-Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. ^ Applications Input and mixer stages especially for FM- and VHF TV-tuners up to 300 MHz.

N-Channel Depletion-Mode MOSFET high voltage

Abstract: SOT-23 MARKING mn DW-200 NDE SOT23 MARKING
Contextual Info: Supertex inc. LND250 N-Channel Depletion-Mode MOSFET Ordering Information BVdsx/ R d S ON Id s s Order Number / Package Product marking for SOT-23: b v dgx (max) (min) TO-236AB* NDE* 500V 1.0KÌÌ 1.0mA LND250K1 where * = 2-week alpha date code ’ Sam e as SOT-23. All units shipped on 3,000 piece carrier tape reels.

sst2100

Abstract: LPD-12
Contextual Info: SILICONIX INC IflE D • 0254735 ODIMGOI 1 ■ SD/SST2100 SERIES C T ’S ilic o n ix J J f in c o rp o ra te d N-Channel Depletion-M ode Lateral DMOS FETs - T The SD/SST2100 Series is a depletion-mode MOSFET which utilizes our lateral DMOS process to provide low capacitance, fast switching, and high

pseudomorphic HEMT

Abstract: TRANSISTOR c 5578 B TRANSISTOR BC 135 0604HQ FPD6836SOT343 OT343 3.5GHz BJT bc 548 transistor transistor bc 731 transistor bc 564
Contextual Info: FPD6836SOT343 FPD6836SOT3 43 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT343 Product Description The FPD6836SOT343 is a packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25µmx750µm

S852T

Abstract: BF579 T0-50 BF964S BF96 BFP183T
Contextual Info: Tem ic Semiconduct ors Selector Guide Dual-Gate Si-MOSFETs N-Channel Depletion Mode Number BF961 BF964S BF966S BF988 BF994S BF995 BF996S BF998 S525T S888T VD5 V 20 20 20 12 20 20 20 12 20 10 lümax mA 30 30 30 30 30 30 30 30 30 20 Iy2isl at Ids mA mS 15

N-Channel Depletion-Mode MOSFET high voltage

Abstract: pc 817 A - mosfet gate drive mosfet to-92 n-channel 20 volt
Contextual Info: S u p e r t e x inc. LND150 /jrfÌN N-Channel Depletion-Mode vHg/ MOSFET Ordering Information _ Order Num ber / Package BVdsx/ ^DS ON I dss BV dox (max) (min) TO-92 TO-243AA* Die 500V 1.0KQ 1.0mA LND150N3 LND150N8 LND150ND * Sam e a s SOT-89. Product shipped on 2000 piece carrie r tape reels.

Contextual Info: DMCD N-Channel _ Depletion-Mode MOSFET in c o r p o r a te d DEVICE TYPE PACKAGE Single TO-72 TO-206AF • SD2100 Single Chip • Available as DMCD1CHP TYPICAL CHARACTERISTICS Depletion Mode - Drain Current & On-Reslstance vs. Gate-Source Cutoff Voltage

Contextual Info: Supertax inc. DN2624 N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVdsx/ R d s o n b v dgx (max) (min) TO-92 Die 240V 4.0£2 600mA DN2624N3 DN2624ND •d s s Advanced DMOS Technology Features □ High input impedance

FPD750SOT89

Abstract: BC 148 TRANSISTOR DATASHEET SSG 23 TRANSISTOR TRANSISTOR BC 135 FPD750SOT89E
Contextual Info: FPD750SOT89 FPD750SOT89 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package Style: SOT89 Product Description Features The FPD750SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky

0603 footprint IPC

Abstract: FPD3000 TRANSISTOR BC 157 FPD3000SOT89 FPD3000SOT89E
Contextual Info: FPD3000SOT89 FPD3000SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD3000SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky

FPD1500

Abstract: SSG 23 TRANSISTOR stu 407 BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 135 TRANSISTOR BC 157 FPD1500DFN FPD750SOT89 InGaAs hemt biasing EB1500DFN-BE
Contextual Info: FPD1500DFN FPD1500DFN Low Noise High Linearity Power pHEMT LOW NOISE HIGH LINEARITY POWER pHEMT Package: 2mmx2mm DFN Product Description Features The FPD1500DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a