ISO264TM Search Results

power switching

Abstract: ISO264 ISO264TM ID90
Contextual Info: ADVANCE TECHNICAL INFORMATION CoolMOSTM Power MOSFET IXKG 25N80C ISO264TM Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , High Voltage MOSFET Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VGS Continuous ±20

IXFG 55N50

Abstract: ISO264 ISO264TM IXFK55N50 55N50
Contextual Info: HiPerFETTM Power MOSFETs IXFG 55N50 ISOPLUS247TM Electrically Isolated Back Surface VDSS ID25 RDS(on) = 500 V = 48 A = 90 mΩ Single Die MOSFET Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500

Contextual Info: HiPerFETTM Power MOSFETs IXFG 55N50 ISOPLUS247TM Electrically Isolated Back Surface VDSS ID25 RDS(on) = 500 V = 48 A = 90 mΩ Single Die MOSFET Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500