NKMM Search Results

24N100

Abstract: 23N10 125OC
Contextual Info: HiPerFETTM Power MOSFET VDSS ID25 RDS on 0.39 Ω 0.43 Ω IXFN 24N100 1000 V 24 A IXFN 23N100 1000 V 23 A têê ≤ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ

HUB1200-S

Abstract: HUB1800-S
Contextual Info: !"#$% Nât !" 123333333333333333333333333333333 !"#$% !"#$%&' *+,-./01 NIMMMt !"#$%&'()*+,!"#$%&'()*+,-./012324 !"#$%&'()*%+,-%&./012 !"#$%&'()*+,-./01-234 !"#$%&'()"*+,-+./"01' !"#$%& '()*+,-+./0123 !"#$%&'()*+,-./0!$%1E !"#$%&'()*+,-./01"234 F !"#$%&'()*+"#!,-./0*1

Contextual Info: 6 4-.+, <38/B 1;:><;8 0;A ]tp./,t- jwt q~2 rp} t}{p,vt .wt ~/.*/. s,x0t pqx{x.3 ~u t{tr.,xrp{ r~}.,~{{t, x} ~,st, .~ s,x0t tprw x|*{t|t}.p.x~} r~|*~}t}.X}s .wt q~2 1x{{ ,tp{x4t .wt r~}}tr.x~} p}s x-~{p.x~} ~u r~}.,~{ {~vx-.xrK ctp}1wx{tI x. 1x{{ p{-~ r~}.,~{ .wt ,t{p.x0t p}}t2 ~u .wt

73N30

Abstract: ixfk73n30
Contextual Info: HiPerFETTM Power MOSFETs V app IXFK 73 N 30 IXFN 73 N 30 kJ`Ü~ååÉä= båÜ~åÅÉãÉåí= jçÇÉ ^î~ä~åÅÜÉ=o~íÉÇI=eáÖÜ=ÇîLÇíI=içï=íêê IaOR RapEçåF 45 mΩ Ω Ω 45 mΩ 300 V 73 A 300 V 73 A têê ≤ 200 ns TO-264 AA IXFK

Contextual Info: Mechanical Package Specifications o M Cherry Semiconductor offers a wide variety of traditional packages in addition to more advanced package technology. Flip Chip is an example of the advanced packaging technologies offered by Cherry Semiconductor. An application note included in this

50N60B

Abstract: nkmm
Contextual Info: HiPerFASTTM IGBT IXGJ 50N60B V`bp I`OR V`bEë~íFíóé tÑáEíóéF = 600 V = 75 A = 2.5 V = 150 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES qg Z=OR°`= íç= NRM°` SMM s VCGR qg Z=OR°`=íç=NRM°`X=odb=Z=N=jΩ SMM s VGES `çåíáåìçìë

Contextual Info: HiPerFETTM Power MOSFETs IXFN 100N10S1 IXFN 100N10S2 with Schottky Diodes IXFN 100N10S3 m~ê~ääÉäI=_ìÅâ=C=_ççëí=`çåÑáÖìê~íáçåë Ñçê=pjmpI=mc`=C=jçíçê=`çåíêçä=`áêÅìáíë S1 VDSS ID25 RDS on S2 QEaF = 100 V = 100 A Ω

Contextual Info: OHAW1N0 NABE IM ININO « M U MMMCTION T H IS DRAWING IS UNPUBLISHED. eo^rwiBMT it R ELEA SED FOR P U B L IC A T IO N ar A M P INCONPORATtD. LOC ,1 9 o it r REVISIONS 14 A LL IN TBN M TIO N AL RIO NTS AC9ERVCD. LTft MTC iip t io n REV / 0720-0323-93 11.10 MAX

Contextual Info: ^Çî~åÅÉÇ=qÉÅÜåáÅ~ä=fåÑçêã~íáçå IXFN 73N30Q HiPerFETTM Power MOSFETs Q-Class RDS on Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 300 V VGS Continuous ±20 V VGSM Transient ±30

ecwvkqpu

Abstract: korg
Contextual Info: r LYhh]b[ r LdYW]Z]WUh]cbg Wtguuwtg v{rg ~+yv~+z +{*|{+ ; G N Tqfgn E WUW qwvrwv IL< IL; Xcvgf rtguuwtg tcpig Lkurnc{ rtguuwtg tcpig Tcz8 rtguuwtg tcpig -P]f]b[0]bhY[fUhYX hmdY. Irrnkecdng hnwkf Wqygt uwrrn{ Kwttgpv eqpuworvkqp @UWU qrgp eqnngevqt qwvrwv 5 Tcz8 ukpm ewttgpvDTcz8 ;:oI6

ouku

Contextual Info: ><G3/7 +@=L.3/<7, GDA?: GH7H; F;A7M <RO]^[R\ \ ormm6 >C?F?=NLC= MNL?HANB \ -}| MN;NOM CH>C=;NIL \ 1BINI CMIF;NCIH \ zOCFNjCH MHO<<?L \ :?LI =LIMM IL L;H>IG NOLHjIH \ 1LCHN?> =CL=OCN <I;L> GIOHN \ 2I+3 =IGJFC;HN ?CEIH f4y x or :;G9F?EH?DC g q NI s6|{ vks NI nqkq6|{

DIODE marking code SJ

Abstract: ERC06 Diode RJ 4A PEI CF 30 FR A536
Contextual Info: E R C 6 i s a : Outline Drawings FAST RECOVERY DIODE Features •*^-T : Marking Most suitable for color T .V . damper. J> 7 — 3 — K : flf C o lo r code : Blue High voltage by mesa design. . <T3> High reliability Abridged type name $ 7 J* V o lta g e cla ss

L6261

Abstract: l626 1 MEGA OHM PRESET Combo (Spindle VCM) Driver L6260 TQFP64 Combo Spindle VCM Driver voice enabled speed control of DC motor Intel 80196 100-10 f
Contextual Info: « S G S -T H O M S O N V # . M M llL [Ig T [a M D (g § L 6 2 6 0 4.5 - 5.5V DISK DRIVER SPINDLE & VCM , PO W ER & CO N TR O L C O M B O ’S PRODUCT PREVIEW GENERAL • 5V AND 3V OPERATION. ‘ REGISTER BASED ARCHITECTURE . MINIMUM EXTERNAL COMPONENTS

Contextual Info: ! ! "# "# ! " # $$ & " $ % " $ %&' *% +,- ( . $ *%/0 ( 1 '4 ' ' 78 '9 2 . 3 2 " " 2 8 " : ; 2 :" 8 ':3 " %&BCD 'A 8 2 " F ' ' %&BCD ' ' ' ' ' 1 . ' 4 "2 5 3 # ' ' 758 8 1 '9 2 2 2 1=> ,? 2 1 2 2 :" ; .6 * H 2! 61* I H F E J * 8 " 2! E 6 6 K ; G "; 2 ;

100N10S2

Abstract: 100N10S1 pehf
Contextual Info: HiPerFETTM Power MOSFETs IXFN 100N10S1 IXFN 100N10S2 with Schottky Diodes IXFN 100N10S3 m~ê~ääÉäI=_ìÅâ=C=_ççëí=`çåÑáÖìê~íáçåë Ñçê=pjmpI=mc`=C=jçíçê=`çåíêçä=`áêÅìáíë S1 VDSS ID25 RDS on S2 QEaF = 100 V = 100 A Ω

ITK 2-1

Contextual Info: ><;4 FH8A?B?7GHE; ?BG;EA;:?7G; DCJ;E E;@7K <PL\]ZP[ e ,ECD OSEP?DEJC ?=L=?EPU nzi n{w nmz orm9z|lpm9}|x ozi o{i nz h n{w uz orm9z|lpm9}| e ,ECD OAJOEPERA e qG9 @EAHA?PNE? OPNAJCPD f>APSAAJ ?KEH d ?KJP=?POg e 6EJCHA OE@A OP=>HA =J@ H=P?DEJC PULAO =R=EH=>HA

Contextual Info: OHAW1N0 NABE IM ININO «M U MMMCTION THIS DRAWING IS UNPUBLISHED. eo^rwiBMT i t RELEASED FOR PUBLICATION a r A M P INCONPORATtD. oitr LOC ,1 9 REVISIONS 14 ALL INTBNMTIONAL RIONTS AC9ERVCD. LTft MTC iip t io n REV / 0720-0323-93 1 1 .1 0 MAX C. 4 3 7 3 WASHER R.

Contextual Info: r=7 SGS-THOMSON A T /. W » ilL llg T O IÌ!g n g i_T D A 2 8 2 2 D DUAL LOW-VOLTAGE POWER AMPLIFIER . • ■ ■ SUPPLY VOLTAGE DOWN TO 1.8V LOWCROSSOVER DISTORTION LOWQUIESCENT CURRENT BRIDGE OR STEREO CONFIGURATION DESCRIPTION The TDA2822D is a monolithic integrated circuit