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    23N10 Search Results

    23N10 Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    badge NCEAP023N10LL
    		NCEPOWER NCE AP023N10LL is an Automotive N-Channel Super Trench II Power MOSFET with 100 V VDS, 300 A ID, 1.7 mΩ typical RDS(ON) at VGS = 10 V, and 175 °C operating temperature, suitable for high-frequency switching and synchronous rectification applications. Original PDF
    badge AKP023N10
    		AK Semiconductor N-Channel Super Trench II Power MOSFET with 100V VDS, 240A ID, 2.0mΩ RDS(ON) typical in TO-220, optimized for high-frequency switching and synchronous rectification. Original PDF
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    23N10 Price and Stock

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    Infineon Technologies AG BSC123N10LSGATMA1

    MOSFET N-CH 100V 10.6/71A 8TDSON
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    DigiKey () BSC123N10LSGATMA1 Digi-Reel 3,371
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    BSC123N10LSGATMA1 Cut Tape 3,371 1
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    Avnet Americas BSC123N10LSGATMA1 Tape & Reel 5,000
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    Rochester Electronics BSC123N10LSGATMA1 15,311 1
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    Chip Stock BSC123N10LSGATMA1 21,000
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    Win Source Electronics BSC123N10LSGATMA1 17,500
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    Infineon Technologies AG IPT023N10NM5LF2ATMA1

    IPT023N10NM5LF2ATMA1
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    DigiKey () IPT023N10NM5LF2ATMA1 Digi-Reel 1,836 1
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    IPT023N10NM5LF2ATMA1 Cut Tape 1,836 1
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    Avnet Americas IPT023N10NM5LF2ATMA1 Tape & Reel 2,000 18 Weeks 2,000
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    Mouser Electronics IPT023N10NM5LF2ATMA1 1,744
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    Newark IPT023N10NM5LF2ATMA1 Cut Tape 1,977 1
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    Rochester Electronics IPT023N10NM5LF2ATMA1 5,716 1
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    Goford Semiconductor GT023N10TL

    MOSFET N-CH 100V 330A TOLL-8
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    DigiKey () GT023N10TL Digi-Reel 1,738 1
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    GT023N10TL Cut Tape 1,738 1
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    Goford Semiconductor GT023N10M

    N100V,140A,RD<2.7M@10V,VTH2.7V~4
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    DigiKey () GT023N10M Tape & Reel 800 800
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    GT023N10M Digi-Reel 800 1
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    Infineon Technologies AG IPP023N10N5XKSA1

    TRENCH >=100V
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    DigiKey IPP023N10N5XKSA1 Tube 485 1
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    Avnet Americas IPP023N10N5XKSA1 Tube 4,058 18 Weeks 50
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    Mouser Electronics IPP023N10N5XKSA1 402
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    Newark IPP023N10N5XKSA1 Bulk 490 1
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    Rochester Electronics IPP023N10N5XKSA1 662,239 1
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    TME IPP023N10N5XKSA1 1
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    EBV Elektronik IPP023N10N5XKSA1 11 Weeks 500
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    23N10 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    24N100

    Abstract: 23N10 125OC
    Contextual Info: HiPerFETTM Power MOSFET VDSS ID25 RDS on 0.39 Ω 0.43 Ω IXFN 24N100 1000 V 24 A IXFN 23N100 1000 V 23 A têê ≤ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		24N100 23N100 24N100 23N100 OT-227 E153432 125oC 23N10 125OC PDF

    Contextual Info: HiPerFETTM Power MOSFET VDSS ID25 RDS on 0.39 Ω 0.41 Ω IXFN 24N100 1000 V 24 A IXFN 23N100 1000 V 23 A trr ≤ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		24N100 23N100 24N100 23N100 OT-227 E153432 125oC PDF

    Contextual Info: HiPerFETTM Power MOSFET VDSS Symbol Test Conditions Maximum Ratings TJ = 25∞C to 150∞C TJ = 25∞C to 150∞C, RGS = 1MΩ VGS VGSM Continuous Transient ID25 TC = 25°C 24N100 23N100 24N100 23N100 1000 1000 V V ±20 ±30 V V A A A A A IDM T C = 25°C;


    Original     		24N100 23N100 24N100 23N100 OT-227 E153432 125oC PDF

    24N100

    Abstract: "SOT-227 B" dimensions 125OC
    Contextual Info: HiPerFETTM Power MOSFET VDSS Symbol Test Conditions Maximum Ratings TJ = 25∞C to 150∞C TJ = 25∞C to 150∞C, RGS = 1MΩ VGS VGSM Continuous Transient ID25 TC = 25°C 24N100 23N100 24N100 23N100 1000 1000 V V ±20 ±30 V V A A A A A IDM T C = 25°C;


    Original     		24N100 23N100 24N100 23N100 OT-227 E153432 125oC "SOT-227 B" dimensions 125OC PDF

    24N100

    Abstract: 23N100
    Contextual Info: HiPerFETTM Power MOSFET VDSS ID25 RDS on 0.39 Ω 0.43 Ω IXFE 24N100 1000 V 22 A IXFE 23N100 1000 V 21 A trr ≤ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		24N100 23N100 227TM PDF

    Contextual Info: HiPerFETTM Power MOSFET VDSS Symbol Test Conditions Maximum Ratings TJ = 25∞C to 150∞C TJ = 25∞C to 150∞C, RGS = 1MΩ VGS VGSM Continuous Transient ID25 TC = 25°C 24N100 23N100 24N100 23N100 1000 1000 V V ±20 ±30 V V A A A A A IDM T C = 25°C;


    Original     		24N100 23N100 24N100 23N100 OT-227 E153432 125oC PDF

    Contextual Info: HiPerFETTM Power MOSFET VDSS ID25 RDS on IXFE 24N100 1000 V 22 A IXFE 23N100 1000 V 21 A trr ≤ 250 ns Single MOSFET Die 0.39 Ω 0.43 Ω Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		24N100 23N100 24N100 23N100 227TM IXFN24N100 24N100: PDF

    24N100

    Abstract: 23N10 IXFN24N100
    Contextual Info: HiPerFETTM Power MOSFET VDSS ID25 RDS on 0.39 Ω 0.43 Ω IXFE 24N100 1000 V 22 A IXFE 23N100 1000 V 21 A trr ≤ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		24N100 23N100 24N100 23N100 227TM IXFN24N100 23N10 PDF