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    23N10 Search Results

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    23N10 Price and Stock

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    Goford Semiconductor GT023N10T

    MOSFET N-CH 100V 226A 250W 2.7m(
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () GT023N10T Tube 2,000 2,000
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    • 10000 $1.32
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    GT023N10T Tube 141 1
    • 1 $4.66
    • 10 $4.66
    • 100 $2.17
    • 1000 $1.66
    • 10000 $1.52
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    TME GT023N10T 1
    • 1 $2.72
    • 10 $2.44
    • 100 $2.16
    • 1000 $1.76
    • 10000 $1.69
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    Goford Semiconductor GT023N10TL

    MOSFET N-CH 100V 330A TOLL-8
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    DigiKey () GT023N10TL Tape & Reel 2,000 2,000
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    • 10000 $1.50
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    GT023N10TL Cut Tape 1,586 1
    • 1 $5.12
    • 10 $3.39
    • 100 $2.41
    • 1000 $2.11
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    GT023N10TL Digi-Reel 1,586 1
    • 1 $5.12
    • 10 $3.39
    • 100 $2.41
    • 1000 $2.11
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    TME GT023N10TL 1
    • 1 $3.11
    • 10 $2.78
    • 100 $2.46
    • 1000 $2.07
    • 10000 $1.94
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    Infineon Technologies AG BSC123N10LSGATMA1

    MOSFET N-CH 100V 10.6/71A 8TDSON
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    DigiKey () BSC123N10LSGATMA1 Cut Tape 1,857 1
    • 1 $2.83
    • 10 $1.81
    • 100 $1.23
    • 1000 $0.91
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    BSC123N10LSGATMA1 Digi-Reel 1,857
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    Bristol Electronics BSC123N10LSGATMA1 3,735
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    Rochester Electronics BSC123N10LSGATMA1 15,311 1
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    • 100 $0.84
    • 1000 $0.70
    • 10000 $0.62
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    Goford Semiconductor GT023N10M

    MOSFET N-CH 100V 226A TO-263
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    DigiKey () GT023N10M Tape & Reel 1,600 800
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    GT023N10M Tape & Reel 782 800
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    • 10000 $1.69
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    GT023N10M Digi-Reel 782
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    GT023N10M Cut Tape 782 1
    • 1 $4.72
    • 10 $3.12
    • 100 $2.22
    • 1000 $2.22
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    TME GT023N10M 1
    • 1 $3.03
    • 10 $2.73
    • 100 $2.18
    • 1000 $1.94
    • 10000 $1.90
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    Infineon Technologies AG IPT023N10NM5LF2ATMA1

    IPT023N10NM5LF2ATMA1
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    DigiKey IPT023N10NM5LF2ATMA1 Digi-Reel 1,528 1
    • 1 $7.70
    • 10 $5.16
    • 100 $3.73
    • 1000 $3.01
    • 10000 $3.01
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    Avnet Americas IPT023N10NM5LF2ATMA1 Tape & Reel 2,000 8 Weeks 2,000
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    • 10000 $1.88
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    Rochester Electronics IPT023N10NM5LF2ATMA1 34,259 1
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    • 100 $1.81
    • 1000 $1.62
    • 10000 $1.52
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    Find more 23N10 price and stock on Findchips.com

    23N10 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    24N100

    Abstract: 23N10 125OC
    Contextual Info: HiPerFETTM Power MOSFET VDSS ID25 RDS on 0.39 Ω 0.43 Ω IXFN 24N100 1000 V 24 A IXFN 23N100 1000 V 23 A têê ≤ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		24N100 23N100 24N100 23N100 OT-227 E153432 125oC 23N10 125OC PDF

    Contextual Info: HiPerFETTM Power MOSFET VDSS ID25 RDS on 0.39 Ω 0.41 Ω IXFN 24N100 1000 V 24 A IXFN 23N100 1000 V 23 A trr ≤ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		24N100 23N100 24N100 23N100 OT-227 E153432 125oC PDF

    Contextual Info: HiPerFETTM Power MOSFET VDSS Symbol Test Conditions Maximum Ratings TJ = 25∞C to 150∞C TJ = 25∞C to 150∞C, RGS = 1MΩ VGS VGSM Continuous Transient ID25 TC = 25°C 24N100 23N100 24N100 23N100 1000 1000 V V ±20 ±30 V V A A A A A IDM T C = 25°C;


    Original     		24N100 23N100 24N100 23N100 OT-227 E153432 125oC PDF

    24N100

    Abstract: "SOT-227 B" dimensions 125OC
    Contextual Info: HiPerFETTM Power MOSFET VDSS Symbol Test Conditions Maximum Ratings TJ = 25∞C to 150∞C TJ = 25∞C to 150∞C, RGS = 1MΩ VGS VGSM Continuous Transient ID25 TC = 25°C 24N100 23N100 24N100 23N100 1000 1000 V V ±20 ±30 V V A A A A A IDM T C = 25°C;


    Original     		24N100 23N100 24N100 23N100 OT-227 E153432 125oC "SOT-227 B" dimensions 125OC PDF

    24N100

    Abstract: 23N100
    Contextual Info: HiPerFETTM Power MOSFET VDSS ID25 RDS on 0.39 Ω 0.43 Ω IXFE 24N100 1000 V 22 A IXFE 23N100 1000 V 21 A trr ≤ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		24N100 23N100 227TM PDF

    Contextual Info: HiPerFETTM Power MOSFET VDSS Symbol Test Conditions Maximum Ratings TJ = 25∞C to 150∞C TJ = 25∞C to 150∞C, RGS = 1MΩ VGS VGSM Continuous Transient ID25 TC = 25°C 24N100 23N100 24N100 23N100 1000 1000 V V ±20 ±30 V V A A A A A IDM T C = 25°C;


    Original     		24N100 23N100 24N100 23N100 OT-227 E153432 125oC PDF

    Contextual Info: HiPerFETTM Power MOSFET VDSS ID25 RDS on IXFE 24N100 1000 V 22 A IXFE 23N100 1000 V 21 A trr ≤ 250 ns Single MOSFET Die 0.39 Ω 0.43 Ω Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		24N100 23N100 24N100 23N100 227TM IXFN24N100 24N100: PDF

    24N100

    Abstract: 23N10 IXFN24N100
    Contextual Info: HiPerFETTM Power MOSFET VDSS ID25 RDS on 0.39 Ω 0.43 Ω IXFE 24N100 1000 V 22 A IXFE 23N100 1000 V 21 A trr ≤ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		24N100 23N100 24N100 23N100 227TM IXFN24N100 23N10 PDF