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    23N10 Search Results

    23N10 Datasheets (2)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    badge AKP023N10
    		AK Semiconductor N-Channel Super Trench II Power MOSFET with 100V VDS, 240A ID, 2.0mΩ RDS(ON) typical in TO-220, optimized for high-frequency switching and synchronous rectification. Original PDF
    badge NCEAP023N10LL
    		NCEPOWER NCE AP023N10LL is an Automotive N-Channel Super Trench II Power MOSFET with 100 V VDS, 300 A ID, 1.7 mΩ typical RDS(ON) at VGS = 10 V, and 175 °C operating temperature, suitable for high-frequency switching and synchronous rectification applications. Original PDF
    SF Impression Pixel

    23N10 Price and Stock

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    Infineon Technologies AG IPP023N10N5XKSA1

    Power MOSFET, N Channel, 100 V, 120 A, 0.0023 ohm, TO-220, Through Hole - Rail/Tube (Alt: IPP023N10N5XKSA1)
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    Avnet Americas IPP023N10N5XKSA1 Tube 4,058 52 Weeks 1
    • 1 $6.08
    • 10 $3.59
    • 100 $2.58
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    Newark IPP023N10N5XKSA1 Bulk 367 1
    • 1 $7.76
    • 10 $4.85
    • 100 $4.52
    • 1000 $4.11
    • 10000 $4.11
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    Rochester Electronics IPP023N10N5XKSA1 829,739 1
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    • 10000 $2.17
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    TME IPP023N10N5XKSA1 1
    • 1 $6.08
    • 10 $3.82
    • 100 $3.15
    • 1000 $2.64
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    EBV Elektronik IPP023N10N5XKSA1 53 Weeks 500
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    Infineon Technologies AG IPT023N10NM5LF2ATMA1

    Power MOSFET, N Channel, 100 V, 243 A, 2100 ?ohm, HSOF, 8 Pins, Surface Mount - Tape and Reel (Alt: IPT023N10NM5LF2ATMA1)
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    Avnet Americas IPT023N10NM5LF2ATMA1 Tape & Reel 2,000 8 Weeks 2,000
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    Newark () IPT023N10NM5LF2ATMA1 Tape & Reel 1,771 100
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    • 100 $4.02
    • 1000 $3.71
    • 10000 $3.56
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    IPT023N10NM5LF2ATMA1 Cut Tape 1,771 1
    • 1 $7.44
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    • 100 $4.02
    • 1000 $3.71
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    Rochester Electronics IPT023N10NM5LF2ATMA1 34,259 1
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    • 100 $2.45
    • 1000 $2.19
    • 10000 $2.06
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    Infineon Technologies AG IPP023N10N5AKSA1

    Trans MOSFET N-CH 100V 120A 3-Pin TO-220 Tube - Rail/Tube (Alt: IPP023N10N5AKSA1)
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    Avnet Americas IPP023N10N5AKSA1 Tube 1,100 8 Weeks 50
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    • 1000 $2.58
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    Newark IPP023N10N5AKSA1 Bulk 1
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    Rochester Electronics IPP023N10N5AKSA1 56,730 1
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    TME IPP023N10N5AKSA1 1
    • 1 $4.49
    • 10 $4.03
    • 100 $3.20
    • 1000 $2.77
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    EBV Elektronik IPP023N10N5AKSA1 53 Weeks 500
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    Vyrian IPP023N10N5AKSA1 10,627
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    Win Source Electronics IPP023N10N5AKSA1 89,625
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    • 100 $1.71
    • 1000 $1.43
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    TE Connectivity TRD23N10WL

    Switch Rocker ON None ON DPDT Wire Lug Curved Rocker 3A 125VAC 28VDC - Bag (Alt: 1-1437596-9)
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    Avnet Americas TRD23N10WL Bag 200
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    • 1000 $24.97
    • 10000 $21.75
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    Newark TRD23N10WL Bulk 4
    • 1 -
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    • 100 $55.43
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    Bristol Electronics TRD23N10WL 19
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    Sager TRD23N10WL 200
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    TME TRD23N10WL 3
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    Master Electronics TRD23N10WL
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    • 10 $79.78
    • 100 $42.03
    • 1000 $28.99
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    Infineon Technologies AG IPB123N10N3GATMA1

    - Tape and Reel (Alt: IPB123N10N3GATMA1)
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    Avnet Americas IPB123N10N3GATMA1 Tape & Reel 1,000
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    Newark IPB123N10N3GATMA1 Tape & Reel 1,000
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    TME IPB123N10N3GATMA1 1
    • 1 $1.82
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    • 100 $1.82
    • 1000 $1.45
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    Win Source Electronics IPB123N10N3GATMA1 6,510
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    Find more 23N10 price and stock on Findchips.com

    23N10 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    24N100

    Abstract: 23N10 125OC
    Contextual Info: HiPerFETTM Power MOSFET VDSS ID25 RDS on 0.39 Ω 0.43 Ω IXFN 24N100 1000 V 24 A IXFN 23N100 1000 V 23 A têê ≤ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		24N100 23N100 24N100 23N100 OT-227 E153432 125oC 23N10 125OC PDF

    Contextual Info: HiPerFETTM Power MOSFET VDSS ID25 RDS on 0.39 Ω 0.41 Ω IXFN 24N100 1000 V 24 A IXFN 23N100 1000 V 23 A trr ≤ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		24N100 23N100 24N100 23N100 OT-227 E153432 125oC PDF

    Contextual Info: HiPerFETTM Power MOSFET VDSS Symbol Test Conditions Maximum Ratings TJ = 25∞C to 150∞C TJ = 25∞C to 150∞C, RGS = 1MΩ VGS VGSM Continuous Transient ID25 TC = 25°C 24N100 23N100 24N100 23N100 1000 1000 V V ±20 ±30 V V A A A A A IDM T C = 25°C;


    Original     		24N100 23N100 24N100 23N100 OT-227 E153432 125oC PDF

    24N100

    Abstract: "SOT-227 B" dimensions 125OC
    Contextual Info: HiPerFETTM Power MOSFET VDSS Symbol Test Conditions Maximum Ratings TJ = 25∞C to 150∞C TJ = 25∞C to 150∞C, RGS = 1MΩ VGS VGSM Continuous Transient ID25 TC = 25°C 24N100 23N100 24N100 23N100 1000 1000 V V ±20 ±30 V V A A A A A IDM T C = 25°C;


    Original     		24N100 23N100 24N100 23N100 OT-227 E153432 125oC "SOT-227 B" dimensions 125OC PDF

    24N100

    Abstract: 23N100
    Contextual Info: HiPerFETTM Power MOSFET VDSS ID25 RDS on 0.39 Ω 0.43 Ω IXFE 24N100 1000 V 22 A IXFE 23N100 1000 V 21 A trr ≤ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		24N100 23N100 227TM PDF

    Contextual Info: HiPerFETTM Power MOSFET VDSS Symbol Test Conditions Maximum Ratings TJ = 25∞C to 150∞C TJ = 25∞C to 150∞C, RGS = 1MΩ VGS VGSM Continuous Transient ID25 TC = 25°C 24N100 23N100 24N100 23N100 1000 1000 V V ±20 ±30 V V A A A A A IDM T C = 25°C;


    Original     		24N100 23N100 24N100 23N100 OT-227 E153432 125oC PDF

    Contextual Info: HiPerFETTM Power MOSFET VDSS ID25 RDS on IXFE 24N100 1000 V 22 A IXFE 23N100 1000 V 21 A trr ≤ 250 ns Single MOSFET Die 0.39 Ω 0.43 Ω Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		24N100 23N100 24N100 23N100 227TM IXFN24N100 24N100: PDF

    24N100

    Abstract: 23N10 IXFN24N100
    Contextual Info: HiPerFETTM Power MOSFET VDSS ID25 RDS on 0.39 Ω 0.43 Ω IXFE 24N100 1000 V 22 A IXFE 23N100 1000 V 21 A trr ≤ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		24N100 23N100 24N100 23N100 227TM IXFN24N100 23N10 PDF