Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    50N80 Search Results

    SF Impression Pixel

    50N80 Price and Stock

    onsemi

    onsemi FCPF2250N80Z

    Power MOSFET, N-Channel, SUPERFET? II, 800 V, 2.6 A, 2.25 O, TO-220F - Rail/Tube (Alt: FCPF2250N80Z)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas FCPF2250N80Z Tube 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.93
    • 10000 $0.90
    Get Quote
    Rochester Electronics FCPF2250N80Z 1,472 1
    • 1 -
    • 10 -
    • 100 $1.29
    • 1000 $1.16
    • 10000 $1.09
    Buy Now
    TME FCPF2250N80Z 1
    • 1 $2.96
    • 10 $2.67
    • 100 $2.36
    • 1000 $1.84
    • 10000 $1.84
    Get Quote
    Flip Electronics FCPF2250N80Z 4,000
    • 1 $0.76
    • 10 $0.76
    • 100 $0.76
    • 1000 $0.76
    • 10000 $0.76
    Get Quote

    onsemi FCPF650N80Z

    Power MOSFET, N-Channel, SUPERFET? II, 800 V, 10 A, 650 mO, TO-220F - Rail/Tube (Alt: FCPF650N80Z)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas FCPF650N80Z Tube 64 Weeks 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.59
    • 10000 $1.55
    Get Quote
    Newark FCPF650N80Z Bulk 150
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.68
    • 10000 $1.64
    Buy Now
    Bristol Electronics FCPF650N80Z 2,190 1
    • 1 $2.74
    • 10 $1.78
    • 100 $1.29
    • 1000 $1.18
    • 10000 $1.18
    Buy Now
    Rochester Electronics FCPF650N80Z 988 1
    • 1 -
    • 10 -
    • 100 $1.60
    • 1000 $1.43
    • 10000 $1.34
    Buy Now
    TME FCPF650N80Z 1
    • 1 $3.96
    • 10 $2.43
    • 100 $2.29
    • 1000 $2.29
    • 10000 $2.29
    Get Quote
    Avnet Asia FCPF650N80Z 64 Weeks 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote
    Avnet Silica FCPF650N80Z 53 Weeks 50
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote
    EBV Elektronik FCPF650N80Z 53 Weeks 50
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote
    Flip Electronics FCPF650N80Z 11,082
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote

    onsemi FCPF850N80Z

    Power MOSFET, N-Channel, SUPERFET? II, 800 V, 6 A, 850 mO, TO-220F - Rail/Tube (Alt: FCPF850N80Z)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas FCPF850N80Z Tube 65 Weeks 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.42
    • 10000 $1.38
    Get Quote
    TME FCPF850N80Z 1
    • 1 $2.30
    • 10 $2.30
    • 100 $1.96
    • 1000 $1.96
    • 10000 $1.96
    Get Quote
    Avnet Silica FCPF850N80Z 53 Weeks 50
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote
    EBV Elektronik FCPF850N80Z 53 Weeks 50
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote
    Flip Electronics FCPF850N80Z 11,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote

    onsemi FCD850N80Z

    Power MOSFET, N-Channel, SUPERFET? II, 800 V, 6 A, 850 mO, DPAK - Tape and Reel (Alt: FCD850N80Z)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas FCD850N80Z Tape & Reel 67 Weeks 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $1.09
    Get Quote
    Newark () FCD850N80Z Tape & Reel 100
    • 1 -
    • 10 -
    • 100 $2.10
    • 1000 $1.75
    • 10000 $1.68
    Buy Now
    FCD850N80Z Cut Tape 1
    • 1 $4.13
    • 10 $4.13
    • 100 $2.10
    • 1000 $1.75
    • 10000 $1.68
    Buy Now
    FCD850N80Z Tape & Reel 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $1.65
    Buy Now
    Rochester Electronics FCD850N80Z 805 1
    • 1 -
    • 10 -
    • 100 $1.51
    • 1000 $1.25
    • 10000 $1.12
    Buy Now
    TME FCD850N80Z 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $1.31
    Get Quote
    Avnet Asia FCD850N80Z 67 Weeks 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote
    Avnet Silica FCD850N80Z 53 Weeks 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote
    EBV Elektronik FCD850N80Z 53 Weeks 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote
    Flip Electronics FCD850N80Z 7,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote
    Master Electronics FCD850N80Z
    • 1 $2.61
    • 10 $2.61
    • 100 $2.61
    • 1000 $2.37
    • 10000 $1.14
    Buy Now
    Wuhan P&S FCD850N80Z 9,597 1
    • 1 $2.82
    • 10 $2.82
    • 100 $1.80
    • 1000 $1.37
    • 10000 $1.37
    Buy Now

    onsemi FDBL0150N80

    N-Channel PowerTrench? MOSFET, 80V, 300A, 1.4mO - Tape and Reel (Alt: FDBL0150N80)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas FDBL0150N80 Tape & Reel 2,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $2.48
    Buy Now
    Newark () FDBL0150N80 Cut Tape 1
    • 1 $6.81
    • 10 $6.81
    • 100 $3.31
    • 1000 $3.04
    • 10000 $2.91
    Buy Now
    FDBL0150N80 Tape & Reel 100
    • 1 -
    • 10 -
    • 100 $3.31
    • 1000 $3.04
    • 10000 $2.91
    Buy Now
    FDBL0150N80 Tape & Reel 2,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $3.29
    Buy Now
    Rochester Electronics FDBL0150N80 35,021 1
    • 1 -
    • 10 -
    • 100 $2.53
    • 1000 $2.26
    • 10000 $2.13
    Buy Now
    TME FDBL0150N80 2,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $3.00
    Get Quote
    Avnet Asia FDBL0150N80 99 Weeks 2,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote
    Avnet Silica FDBL0150N80 53 Weeks 2,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote
    EBV Elektronik FDBL0150N80 53 Weeks 2,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote
    Win Source Electronics FDBL0150N80 90,000
    • 1 -
    • 10 -
    • 100 $2.02
    • 1000 $1.86
    • 10000 $1.86
    Buy Now
    Wuhan P&S FDBL0150N80 48,000 1
    • 1 $6.41
    • 10 $6.41
    • 100 $4.09
    • 1000 $3.10
    • 10000 $3.10
    Buy Now

    50N80 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    50n60

    Abstract: G 50N60 50n80 bi-directional switches IGBT induction heat resonant TO-247 D-68623
    Contextual Info: Advanced Technical Information IGBT with Reverse Blocking capability VCES = 600 / 800V IC25 = 60 A VCE sat = 2.5 V tf = 75 ns IXRH 50N80 IXRH 50N60 C TO-247 AD G G C E C (TAB) E G = Gate, E = Emitter, C = Collector, TAB = Collector Features IGBT Symbol Conditions


    Original
    50n8050n60o-247g 50n60+4bi-directional switches igbtinduction heat resonantto-247d-68623 PDF

    50n80

    Abstract: 50N80Q2 50n8 IXFB 50N80Q2 IXFB50N80Q2 50N80Q
    Contextual Info: Advance Technical Information HiPerFETTM Power MOSFETs IXFB 50N80Q2 VDSS = ID25 = RDS on = N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr 800 V 50 A 0.15 Ω trr ≤ 300 ns PLUS 264TM (IXFB) Symbol Test Conditions


    Original
    50n80q2264tm728b150n80+450n8ixfb 50n80q2ixfb50n80q250n80q PDF

    50n80

    Abstract: 50N80Q2 IXFN50N80Q2
    Contextual Info: HiPerFETTM Power MOSFET IXFN 50N80Q2 VDSS = ID25 = RDS on = N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr 800 V 50 A 0.15 Ω trr ≤ 300 ns Preliminary Data Sheet miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions


    Original
    50n80q2ot-227e153432728b1+4123b1065b150n80ixfn50n80q2 PDF

    IXFB

    Abstract: 50N80Q2 IXFB50N80Q2 50n80
    Contextual Info: HiPerFETTM Power MOSFETs IXFB 50N80Q2 VDSS = ID25 = RDS on = N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr 800 V 50 A 0.15 Ω trr ≤ 300 ns PLUS 264TM (IXFB) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original
    50n80q2264tmixfbixfb50n80q2+150n80 PDF

    50N80Q2

    Abstract: IXFB50N80Q2 264TM
    Contextual Info: Advance Technical Information HiPerFETTM Power MOSFETs IXFB 50N80Q2 VDSS = ID25 = RDS on = N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr 800 V 50 A 0.15 Ω trr ≤ 300 ns PLUS 264TM (IXFB) Symbol Test Conditions


    Original
    50n80q2264tm150imited728b1+1ixfb50n80q2 PDF

    50N80Q2

    Abstract: IXFN50N80Q2
    Contextual Info: HiPerFETTM Power MOSFET IXFN 50N80Q2 VDSS = ID25 = RDS on = N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV /dt, Low trr 800 V 50 A 0.15 Ω trr ≤ 300 ns miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions Maximum Ratings


    Original
    50n80q2ot-227e153432ixfn50n80q2 PDF

    Contextual Info: Advance Technical Information HiPerFETTM Power MOSFETs IXFB 50N80Q2 VDSS = ID25 = RDS on = N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr 800 V 50 A 0.15 Ω trr ≤ 300 ns PLUS 264TM (IXFB) Symbol Test Conditions


    Original
    50n80q2264tm728b1 PDF

    60N60A

    Abstract: c5021-0
    Contextual Info: ÖIXYS HiPerFAST IGBT with Diode IXGK 50N60AU1 V CES ^C25 V CE sat tfi Symbol Test Conditions V „„ T 25° C to 150° C T, 2 5 °C to 1 5 0 °C ;F L Maximum Ratings 600 V 600 V Continuous +20 V Transient +30 V T c = 25° C, limited by leads 75 A ^C90


    OCR Scan
    50n60au1o-264jedecto-264aa100-c+260n60ac5021-0 PDF

    A 69157 scr

    Abstract: HCPL 1458 TRANSISTOR SMD 431H SMPS 666 VER 2.3 SMPS 666 VER 2.1 acsl 086 s LHi 878 2057 LED dot matrix display 5x7 smd ic A9A 42-M41
    Contextual Info: ND3% BASE1 XXXX4641-1306-1-P 1306 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 18-07-11 Hour: 14:59 TS:TS date TS time LEDS & ACCESSORIES Find Datasheets Online LED DESIGN KITS • THROUGH-HOLE LEDS POWER LINE DESIGNER KIT HIGH-INTENSITY LED LAMPS CONT. T- 13⁄4 (5mm)


    Original
    74k514574k514474k514674k5147+1674k516674k517071k025671k027371k025571k0272a 69157 scrhcpl 1458transistor smd 431hsmps 666 ver 2.3smps 666 ver 2.1acsl 086 slhi 8782057 led dot matrix display 5x7smd ic a9a42-m41 PDF

    50N60

    Abstract: 50N100 50n80 40N160 9N160G 50N6
    Contextual Info: BIMOSFET High Speed Types in 1400 und 1600 V ► New •e. A *C90 Tc = 25 °C Tc = 90 °C Gate drive V í-H < r o" 1 V CES V Type A □ ^1 tvp ns Package style 6 z Outlines on page 91-100 ri> G = Gate, E = Emitter, LL C = Collector thJC K/W T ,= 125 °C


    OCR Scan
    9n140g15n14020n14040n140+89n160g15n16020n16050n6050n10050n8040n16050n6 PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original
    ms-01310-pin5m-1994mo-229+107n60b equivalent18n50 equivalentixgh 1499mosfet smd 4407ixdd 614c 547 b w57 bjt transistorr1275ns20lr1271ns12cixys cs 20-22 mof1ixtp 220n04t2 PDF

    Contextual Info: BIXYS IXGX 50N60AU1 HiPerFAST IGBT with Diode 600 V 75 A 2.7 V 275 ns CES ^C25 v* CE sat t'fi Preliminary data Maximum Ratings Symbol Test Conditions VC E S T j = 25cCto 150°C 600 V v CGR T,J = 25° C to 150° C; RG„L = 1 MQ 600 V VGES Continuous ±20


    OCR Scan
    50n60au125cctoo-24750n80au1+11999ixys PDF

    ixys ml 075

    Abstract: 50N60A
    Contextual Info: OIXYS HiPerFAST IGBT with Diode IXGX50N60AU1 IXGX50N60AU1S = 600 V = 75 A = 2.7 V = 275 ns 'C E S IC 25 VCE sat fi Preliminary data S ym bol Test C onditions V* CES T j = 2 5 « C to 1 5 0 ° C 600 V V CGR T j = 25°C to 150°C; RGE = 1 M£2 600 V v GES


    OCR Scan
    ixgx50n60au1ixgx50n60au1s50n60au1ixys ml 075+150n60a PDF