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    IXYS Corporation IXXH50N60B3D1

    IGBT PT 600V 120A TO-247AD
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    DigiKey IXXH50N60B3D1 Tube 264 1
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    Mouser Electronics IXXH50N60B3D1 516
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    Future Electronics IXXH50N60B3D1 Tube 90 30
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    TTI IXXH50N60B3D1 Tube 300 30
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    TME IXXH50N60B3D1 1
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    New Advantage Corporation IXXH50N60B3D1 221 1
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    Littelfuse Inc IXXH50N60B3D1

    Disc Igbt Xpt-Genx3 To-247Ad/ Tube |Littelfuse IXXH50N60B3D1
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    Newark IXXH50N60B3D1 Bulk 300
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    IXXH50N60B3D1 Datasheets Context Search

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    IXXH50N60B3D1

    Contextual Info: IXXH50N60B3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES = IC110 = VCE sat  tfi(typ) = Extreme Light Punch Through IGBT for 5-30kHz Switching 600V 50A 1.80V 135ns TO-247 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M


    Original     		IXXH50N60B3D1 IC110 5-30kHz 135ns O-247 IF110 IXXH50N60B3D1 PDF

    IXXH50N60B3D1

    Contextual Info: Advance Technical Information XPTTM IGBT 600V GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXXH50N60B3D1 Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 50A 1.80V 135ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		IC110 IXXH50N60B3D1 135ns O-247 IF110 50N60B3D1 IXXH50N60B3D1 PDF

    IXXH50N60B3D1

    Abstract: 50N60B3D1 18A100
    Contextual Info: Advance Technical Information IXXH50N60B3D1 XPTTM IGBT 600V GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 50A 1.80V 135ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		IXXH50N60B3D1 IC110 135ns O-247 IF110 062in. 50N60B3D1 IXXH50N60B3D1 18A100 PDF