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    IXXN110N65B4H1 Search Results

    IXXN110N65B4H1 Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXXN110N65B4H1
    IXYS IGBTs - Modules, Discrete Semiconductor Products, IGBT 650V 215A 750W SOT227B Original PDF 7
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    IXXN110N65B4H1 Price and Stock

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    IXYS Corporation IXXN110N65B4H1

    IGBT MOD 650V 215A 750W SOT-227B
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    DigiKey IXXN110N65B4H1 Tube 200 1
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    Mouser Electronics IXXN110N65B4H1 253
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    TTI IXXN110N65B4H1 Tube 290 10
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    TME IXXN110N65B4H1 1
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    Littelfuse Inc IXXN110N65B4H1

    Igbt, Module, 650V, 230A, Sot-227B; Continuous Collector Current:230A; Collector Emitter Saturation Voltage:1.72V; Power Dissipation:750W; Operating Temperature Max:175°C; Igbt Termination:Stud; Collector Emitter Voltage Max:650V Rohs Compliant: Yes |Littelfuse IXXN110N65B4H1
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    Newark IXXN110N65B4H1 Bulk 1
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    RS IXXN110N65B4H1 Bulk 8 Weeks 10
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    IXXN110N65B4H1 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: XPTTM 650V GenX4TM w/ Sonic Diode IXXN110N65B4H1 Extreme Light Punch Through IGBT for 10-30kHz Switching VCES = IC110 = VCE sat  tfi(typ) = 650V 110A 2.1V 85ns E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original
    IXXN110N65B4H1 10-30kHz IC110 OT-227B, E153432 IF110 110N65B4H1 02-04-13-B PDF

    ixxn110n65

    Contextual Info: Advance Technical Information XPTTM 650V GenX4TM w/ Sonic Diode IXXN110N65B4H1 Extreme Light Punch Through IGBT for 10-30kHz Switching VCES IC110 VCE sat tfi(typ) = = ≤ = 650V 110A 2.1V 85ns E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings


    Original
    10-30kHz IXXN110N65B4H1 IC110 OT-227B, E153432 IF110 50/60Hz VCE00 110N65B4H1 ixxn110n65 PDF

    IXYS CORPORATION

    Abstract: MTI85W100GC CLB30I1200HB 200WX75GD Thyristor 12kV 10 kA MTI200WX75GD AGT ssr up/MTI85W100GC MTI relay CMA30E1600PZ
    Contextual Info: NEWS PCIM 2013 IXYS Efficiency through Technology ComPack Thyristor Module Platform A new Design that reduces Parts and Material Costs with Higher Power Density has a 33% reduced footprint and weight 67% less than current alternatives, significantly illustrating how IXYS’ MORE POWER, LESS


    Original
    DMA10P1600PZ /1600V) CMA50E1600TZ DSP45-16TZ O-263 D-68623 CH-2555 IXYS CORPORATION MTI85W100GC CLB30I1200HB 200WX75GD Thyristor 12kV 10 kA MTI200WX75GD AGT ssr up/MTI85W100GC MTI relay CMA30E1600PZ PDF