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Littelfuse Inc IXTQ110N10P Disc Mosfet N-Ch Std-Polar To-3P (3)/ Tu; \|Littelfuse IXTQ110N10P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXTQ110N10P	Bulk			300	1 - 10 - 100 - 1000 $4.14 10000 $3.88	Buy Now
RS	IXTQ110N10P	Bulk		8 Weeks	30	1 - 10 - 100 $6.96 1000 $6.96 10000 $6.96	Get Quote
Chip 1 Exchange	IXTQ110N10P		207			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Littelfuse Inc IXFH110N10P Discmosfetn-Ch Hiperfet-Polar To-247Ad/; \|Littelfuse IXFH110N10P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXFH110N10P	Bulk			300	1 - 10 - 100 - 1000 $5.08 10000 $4.85	Buy Now
RS	IXFH110N10P	Bulk		8 Weeks	30	1 - 10 - 100 $7.46 1000 $7.46 10000 $7.46	Get Quote
Littelfuse Inc IXTT110N10P Disc Mosfet N-Ch Std-Polar To-268Aa/ Tub; \|Littelfuse IXTT110N10P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXTT110N10P	Bulk			300	1 - 10 - 100 - 1000 $7.06 10000 $6.62	Buy Now
RS	IXTT110N10P	Bulk		8 Weeks	30	1 - 10 - 100 $10.10 1000 $10.10 10000 $10.10	Get Quote
IXYS Corporation IXTT110N10P MOSFETs 110 Amps 100V 0.015 Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	IXTT110N10P	Tube			300	1 - 10 - 100 - 1000 $7.35 10000 $7.35	Buy Now
TME	IXTT110N10P				1	1 $7.11 10 $5.65 100 $5.27 1000 $5.27 10000 $5.27	Get Quote
IXYS Corporation IXFH110N10P MOSFETs 110 Amps 100V 0.015 Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	IXFH110N10P	Tube			300	1 - 10 - 100 - 1000 $5.15 10000 $5.15	Buy Now
Bristol Electronics	IXFH110N10P		8			1 - 10 - 100 - 1000 - 10000 -	Get Quote
TME	IXFH110N10P		171		1	1 $8.95 10 $6.60 100 $4.84 1000 $4.58 10000 $4.58	Buy Now

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110N10P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IXFH110N10P Abstract: 110N10P Contextual Info: PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated IXFH 110N10P IXFV 110N10P IXFV 110N10PS VDSS ID25 RDS on Preliminary Data Sheet TO-247 (IXFH) Symbol Test Conditions VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C; RGS = 1 MΩ	Original	110n10p 110n10ps o-247 10oulombs +1ixfh110n10p	PDF
IXFV110N10P Abstract: PLUS220SMD 110N10P IXFH110N10P Contextual Info: PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated IXFH 110N10P IXFV 110N10P IXFV 110N10PS VDSS = 100 V ID25 = 110 A Ω RDS on ≤ 15 mΩ ≤ 150 ns trr Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 175° C	Original	110n10p 110n10ps ixfv110n10p plus220smd +1ixfh110n10p	PDF
110N10P Contextual Info: Advance Technical Information IXTQ 110N10P IXTT 110N10P PolarHTTM Power MOSFET VDSS ID25 RDS on = 100 = 110 = 15 V A Ω mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ	Original	110n10p o-268 405b2	PDF
Contextual Info: IXTQ 110N10P IXTT 110N10P PolarHTTM Power MOSFET VDSS ID25 RDS on = 100 = 110 ≤ 15 V A Ω mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 100 100 V V VGS VGSM	Original	110n10p o-268	PDF
Contextual Info: PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated VDSS = 100 V ID25 = 110 A Ω RDS on ≤ 15 mΩ ≤ 150 ns trr IXFH 110N10P IXFV 110N10P IXFV 110N10PS Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 175° C	Original	110n10p 110n10ps ixfv110n10p	PDF
110N10P Contextual Info: PolarHTTM HiPerFET Power MOSFET IXFC 110N10P VDSS ID25 RDS on N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated = 100 V = 66 A Ω = 17 mΩ Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C; RGS = 1 MΩ	Original	110n10p	PDF
Contextual Info: PolarHVTM HiPerFET Power MOSFET ISOPLUS220TM IXFC 110N10P VDSS = 100 V ID25 = 60 A RDS on ≤ 17 m Ω ≤ 150 ns trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings	Original	isoplus220tm 110n10p 5-05-a	PDF
110N10P Abstract: 110n10 Contextual Info: IXTQ 110N10P IXTT 110N10P PolarHTTM Power MOSFET VDSS ID25 RDS on = 100 = 110 ≤ 15 V A Ω mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 100 100 V V VGS VGSM	Original	110n10p 110n10	PDF
110N10P Abstract: 110n10 Contextual Info: PolarHVTM HiPerFET Power MOSFET ISOPLUS220TM IXFC 110N10P VDSS = 100 V ID25 = 60 A RDS on ≤ 17 m Ω ≤ 150 ns trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings	Original	isoplus220tm 110n10p 5-05-a 110n10	PDF
IXTD08N100P-1A Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2 Contextual Info: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types	Original	ixtd08n100p-1a ixtq22n60p ixfh20n80p dws20-200a +6ixfh24n80p ixfk180n15p ixtq22n50p dwhp16-12 ixgh64n60a3 ixfb50n80q2	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	ms-013 10-pin 5m-1994 mo-229 +107n60b equivalent 18n50 equivalent ixgh 1499 mosfet smd 4407 ixdd 614 c 547 b w57 bjt transistor r1275ns20l r1271ns12c ixys cs 20-22 mof1 ixtp 220n04t2	PDF
STW20N60 Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p Contextual Info: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal	Original	o-220 isoplus220tm o-247 isoplus247tm +15o-264 isoplus264tm plus220 plus220smd o-252 stw20n60 2n60p ixfb100n50 ixfb100n50p stw20n60fd ixfb100n50p to-264 ixys ixfn100n50p ixfn48n60p ixfh30n60p ixfn100n50p	PDF
DIODE 1334 Abstract: 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP 200N10P-88 Contextual Info: Chip-Shortform2004.pmd PolarHTTM MOSFET, very low RDS on Type VDSS max. RDSon max. Chip type Chip size dimensions 11 Source bond wire recommended Equivalent device data sheet 26.10.2004, 12:44 V mΩ mm mils IXTD 110N055P-5S 55 21 5S 6.20 x 5.20 244 x 205	Original	110n055p-5s 75n10p-5s 110n10p-6s 140n10p-7s +15170n10p-8s 200n10p-88 62n15p-5s 96n15p-6s 120n15p-7s 150n15p-8s diode 1334 1334 diode 96n20 36n30p equivalent 88n30 100n25p 36n30 ixtp75n10p ixtp ixtp ixtp ixtp	PDF

110N10P Search Results

110N10P Price and Stock

Littelfuse Inc IXTQ110N10P

Littelfuse Inc IXFH110N10P

Littelfuse Inc IXTT110N10P

IXYS Corporation IXTT110N10P

IXYS Corporation IXFH110N10P

110N10P Datasheets Context Search

IXFH110N10P

IXFV110N10P

110N10P

110N10P

110N10P

110N10P

IXTD08N100P-1A

7N60B equivalent

STW20N60

DIODE 1334