IXFV110N10P Search Results

IXFV110N10P

Abstract: PLUS220SMD 110N10P IXFH110N10P
Contextual Info: PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated IXFH 110N10P IXFV 110N10P IXFV 110N10PS VDSS = 100 V ID25 = 110 A Ω RDS on ≤ 15 mΩ ≤ 150 ns trr Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 175° C

Contextual Info: PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated VDSS = 100 V ID25 = 110 A Ω RDS on ≤ 15 mΩ ≤ 150 ns trr IXFH 110N10P IXFV 110N10P IXFV 110N10PS Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 175° C

1200 volt mosfet

Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P
Contextual Info: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET

STW20N60

Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
Contextual Info: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal