110N10 Search Results

IXFH110N10P

Abstract: 110N10P
Contextual Info: PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated IXFH 110N10P IXFV 110N10P IXFV 110N10PS VDSS ID25 RDS on Preliminary Data Sheet TO-247 (IXFH) Symbol Test Conditions VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C; RGS = 1 MΩ

IXFV110N10P

Abstract: PLUS220SMD 110N10P IXFH110N10P
Contextual Info: PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated IXFH 110N10P IXFV 110N10P IXFV 110N10PS VDSS = 100 V ID25 = 110 A Ω RDS on ≤ 15 mΩ ≤ 150 ns trr Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 175° C

110N10P

Contextual Info: Advance Technical Information IXTQ 110N10P IXTT 110N10P PolarHTTM Power MOSFET VDSS ID25 RDS on = 100 = 110 = 15 V A Ω mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ

Contextual Info: IXTQ 110N10P IXTT 110N10P PolarHTTM Power MOSFET VDSS ID25 RDS on = 100 = 110 ≤ 15 V A Ω mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 100 100 V V VGS VGSM

Contextual Info: PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated VDSS = 100 V ID25 = 110 A Ω RDS on ≤ 15 mΩ ≤ 150 ns trr IXFH 110N10P IXFV 110N10P IXFV 110N10PS Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 175° C

110N10P

Contextual Info: PolarHTTM HiPerFET Power MOSFET IXFC 110N10P VDSS ID25 RDS on N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated = 100 V = 66 A Ω = 17 mΩ Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C; RGS = 1 MΩ

Contextual Info: PolarHVTM HiPerFET Power MOSFET ISOPLUS220TM IXFC 110N10P VDSS = 100 V ID25 = 60 A RDS on ≤ 17 m Ω ≤ 150 ns trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings

110N10P

Abstract: 110n10
Contextual Info: IXTQ 110N10P IXTT 110N10P PolarHTTM Power MOSFET VDSS ID25 RDS on = 100 = 110 ≤ 15 V A Ω mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 100 100 V V VGS VGSM

110N10P

Abstract: 110n10
Contextual Info: PolarHVTM HiPerFET Power MOSFET ISOPLUS220TM IXFC 110N10P VDSS = 100 V ID25 = 60 A RDS on ≤ 17 m Ω ≤ 150 ns trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings

IXTD08N100P-1A

Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
Contextual Info: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types

Contextual Info: 110N10F7-2, 110N10F7-6 N-channel 100 V, 4.9 mΩ typ., 110 A, STripFET VII DeepGATE™ Power MOSFETs in H2PAK-2 and H2PAK-6 packages Datasheet - production data Features Order codes RDS on max ID PTOT 100 V 6.5 mΩ 110 A 150 W 110N10F7-2 TAB TAB

110N10F7

Abstract: stp110n10f7 STF45N10F7 45N10F7 SB25
Contextual Info: STF45N10F7, 110N10F7-2, 110N10F7 N-channel 100 V, 0.006 Ω typ., 120 A, STripFET VII DeepGATE™ Power MOSFET in TO-220FP, H2PAK-2 and TO-220 packages Datasheet — preliminary data Features Type VDSS RDS on max(1) ID PTOT STF45N10F7 100 V 0.007 Ω

110N10F7

Abstract: VID21 STL11
Contextual Info: 110N10F7 N-channel 100 V, 0.005 Ω typ., 21 A, STripFET VII DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package Datasheet — preliminary data Features Type VDSS RDS on max ID PTOT 110N10F7 100 V 0.006 Ω (VGS= 10 V) 21 A 5W • Ultra low on-resistance

Contextual Info: 110N10F7 N-channel 100 V, 0.005 Ω typ., 107 A, STripFET VII DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Features 1 2 3 Order code VDS 110N10F7 100 V RDS on max ID PTOT 0.006 Ω 107 A 136 W (VGS= 10 V) • Ultra low on-resistance

7N60B equivalent

Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches

stp110n10f7

Abstract: 110N10F7
Contextual Info: 110N10F7 N-channel 100 V, 6 mΩ typ., 110 A, STripFET VII DeepGATE™ Power MOSFET in a TO-220 package Datasheet — preliminary data Features Order code VDSS RDS on max 110N10F7 100 V 7 mΩ • Ultra low on-resistance ■ 100% avalanche tested PTOT

STH110N10F7-2

Contextual Info: 110N10F7-2, 110N10F7-6 N-channel 100 V, 5.5 mΩ typ., 110 A, STripFET VII DeepGATE™ Power MOSFET in H2PAK-2 and H2PAK-6 packages Datasheet — preliminary data Features VDS RDS on max 100 V 6.5 mΩ Order codes 110N10F7-2 110N10F7-6 PTOT ID

STW20N60

Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
Contextual Info: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal

DIODE 1334

Abstract: 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP 200N10P-88
Contextual Info: Chip-Shortform2004.pmd PolarHTTM MOSFET, very low RDS on Type VDSS max. RDSon max. Chip type Chip size dimensions 11 Source bond wire recommended Equivalent device data sheet 26.10.2004, 12:44 V mΩ mm mils IXTD 110N055P-5S 55 21 5S 6.20 x 5.20 244 x 205

Contextual Info: 110N10F7, 110N10F7 N-channel 100 V, 5.1 mΩ typ., 110 A, STripFET VII DeepGATE™ Power MOSFETs in TO-220FP and TO-220 packages Datasheet - production data Features Order codes VDS RDS on max 100 V 0.007 Ω 110N10F7 TAB 110N10F7 1 2 3 1 TO-220FP