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    26N60P Search Results

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    26N60P Price and Stock

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    Littelfuse Inc IXFT26N60P

    Discmosfetn-Ch Hiperfet-Polar To-268Aa/; |Littelfuse IXFT26N60P
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    Newark IXFT26N60P Bulk 300
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    Littelfuse Inc IXTH26N60P

    Disc Mosfet N-Ch Std-Polar To-247Ad/ Tub; |Littelfuse IXTH26N60P
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    IXTH26N60P Bulk 1
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    Littelfuse Inc IXTT26N60P

    Mosfet, N-Ch, 600V, 26A, To-268-3; |Littelfuse IXTT26N60P
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    Littelfuse Inc IXFH26N60P

    DiscMosfetN-CH HiPerFET-Polar TO-247AD
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    IXYS Corporation IXFH26N60P

    MOSFETs 600V 26A
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    TTI IXFH26N60P Tube 300
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    TME IXFH26N60P 7 1
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    26N60P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    26N60P

    Abstract: PLUS220SMD
    Contextual Info: Advance AdvanceTechnical TechnicalInformation Information PolarHVTM Power MOSFET IXFH 26N60P IXFQ 26N60P IXFT 26N60P IXFV 26N60P IXFV 26N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated VDSS ID25 = = RDS on ≤ ≤ trr TO-247 (IXFH) Symbol


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    26n60p26n60pso-247plus220smd+2plus220o-268 PDF

    26n60

    Abstract: 26N60P PLUS220SMD
    Contextual Info: Advance AdvanceTechnical TechnicalInformation Information PolarHVTM Power MOSFET IXTH 26N60P IXTQ 26N60P IXTT 26N60P IXTV 26N60P IXTV 26N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated VDSS ID25 RDS on TO-247 (IXTH) Symbol Test Conditions


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    26n60p26n60pso-247plus220smd+3plus220o-26826n60 PDF

    max2678

    Contextual Info: PolarHVTM Power MOSFET VDSS = 600 V ID25 = 26 A RDS on ≤ 270 m Ω ≤ 200 ns trr IXFH 26N60P IXFT 26N60P IXFV 26N60P IXFV 26N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C


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    26n60p26n60pso-247o-268+2plus220max2678 PDF

    Contextual Info: Advance AdvanceTechnical TechnicalInformation Information PolarHVTM Power MOSFET VDSS ID25 = = RDS on ≤ ≤ trr IXFH 26N60P IXFQ 26N60P IXFT 26N60P IXFV 26N60P IXFV 26N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated TO-247 (IXFH) Symbol


    Original
    26n60p26n60pso-247405b2+1plus220 PDF

    DSA003703

    Abstract: 26n60
    Contextual Info: Advance AdvanceTechnical TechnicalInformation Information PolarHVTM Power MOSFET IXTH 26N60P IXTQ 26N60P IXTT 26N60P IXTV 26N60P IXTV 26N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated VDSS ID25 RDS on TO-247 (IXTH) Symbol Test Conditions


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    26n60p26n60pso-247o-268+2dsa00370326n60 PDF

    26N60P

    Abstract: TO-248
    Contextual Info: Advance AdvanceTechnical TechnicalInformation Information PolarHVTM Power MOSFET IXTH 26N60P IXTQ 26N60P IXTT 26N60P IXTV 26N60P IXTV 26N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated VDSS ID25 RDS on TO-247 (IXTH) Symbol Test Conditions


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    26n60p26n60pso-247o-268+3plus220plus220smdto-248 PDF

    5007a

    Contextual Info: IXTH 26N60P IXTQ 26N60P IXTT 26N50P IXTV 26N60P IXTV 26N60PS PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated VDSS = 600 V ID25 = 26 A RDS on ≤ 270 m Ω TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C


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    26n60p26n50p26n60pso-247+2o-2685007a PDF

    Contextual Info: PolarHVTM Power MOSFET VDSS = 800 V ID25 = 16 A Ω RDS on ≤ 600 mΩ ≤ 250 ns trr IXFH 16N80P IXFT 16N80P IXFV 16N80P IXFV 16N80PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS


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    16n80p16n80pso-24726n60p+126n60ps PDF

    2n60p

    Abstract: gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P
    Contextual Info: 2005 / 1 IXYS NEWS MSC IGBT Module Line to include Economical Small 6Pack Incorporating Latest NPT3 and Trench IGBT Technologies IXYS announced that in keeping up with ambitious growth plans in the IGBT market, its European Operation, a leader in Direct Copper Bond


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    ixfr48n60p18n60p30n60p22n60p+1536n60p26n60p48n60pplus220ixtv22n50ps2n60pgsm based speed control of single phase induction motorthyristor family48n60600v 20 amp mosfet14n60300v hiperfet power mosfet single die mosfetwireless a.c motor speed controlling systemixys scr module gate drive15n60p PDF

    16N80P

    Abstract: 26N60P PLUS220SMD siemens
    Contextual Info: PolarHVTM Power MOSFET VDSS = 800 V ID25 = 16 A Ω RDS on ≤ 600 mΩ ≤ 250 ns trr IXFH 16N80P IXFT 16N80P IXFV 16N80P IXFV 16N80PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS


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    16n80p16n80pso-24726n60p+326n60psplus220smdsiemens PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


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    ms-01310-pin5m-1994mo-229+107n60b equivalent18n50 equivalentixgh 1499mosfet smd 4407ixdd 614c 547 b w57 bjt transistorr1275ns20lr1271ns12cixys cs 20-22 mof1ixtp 220n04t2 PDF

    IXFH26N60P

    Abstract: IXFV26N60P 26n60 26N60PS 26N60P IXFT26N60P IXFV26N60PS PLUS220SMD ixfh26n60
    Contextual Info: PolarHVTM Power MOSFET VDSS = 600 V ID25 = 26 A Ω RDS on ≤ 270 mΩ ≤ 200 ns trr 26N60P 26N60P 26N60P 26N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


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    ixfh26n60pixft26n60pixfv26n60pixfv26n60ps+6o-24726n60p26n60ps26n60plus220smdixfh26n60 PDF

    STW20N60

    Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
    Contextual Info: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal


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    o-220isoplus220tmo-247isoplus247tm+15o-264isoplus264tmplus220plus220smdo-252stw20n602n60pixfb100n50ixfb100n50pstw20n60fdixfb100n50p to-264ixys ixfn100n50pixfn48n60pixfh30n60pixfn100n50p PDF

    Contextual Info: PolarHVTM Power MOSFET VDSS = 600 V ID25 = 26 A Ω RDS on ≤ 270 mΩ ≤ 200 ns trr 26N60P 26N60P 26N60P 26N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original
    ixfh26n60pixft26n60pixfv26n60pixfv26n60ps+426n60p26n60pso-247plus220smd PDF