IXFC52N30P Search Results

52N30

Abstract: 52N30P IXFC52N30P 1M300 52APF
Contextual Info: IXFC52N30P PolarHTTM Power MOSFET HiPerFETTM VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = = ≤ ≤ 300V 24A Ω 75mΩ 200ns N-Channel Enhancement Mode Avalanche Rated ISOPLUS 220TM E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

1M300

Abstract: 52N30 52N30P IXFC52N30P
Contextual Info: Advance Technical Information IXFC52N30P PolarHTTM HiPerFET Power MOSFET VDSS ID25 RDS on = 300 V = 32 A Ω = 75 mΩ N-Channel Enhancement Mode Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 300 300 V V VGSS VGSM

52N30

Contextual Info: IXFC52N30P PolarTM Power MOSFET HiPerFETTM VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = =   300V 24A  80m 200ns N-Channel Enhancement Mode Avalanche Rated ISOPLUS220TM E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C

Contextual Info: PolarHTTM HiPerFET Power MOSFET ISOPLUS220TM VDSS ID25 IXFC52N30P RDS on trr (Electrically Isolated Back Surface) = = ≤ ≤ 300 24 75 200 V A Ω mΩ ns N-Channel Enhancement Mode Fast Recovery Diode, Avalanche Rated Symbol Test Conditions Maximum Ratings

Contextual Info: PolarHTTM Power MOSFET HiPerFETTM VDSS ID25 IXFC52N30P RDS on trr (Electrically Isolated Back Surface) = = ≤ ≤ 300V 24A Ω 75mΩ 200ns N-Channel Enhancement Mode Avalanche Rated ISOPLUS 220TM E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

7N60B equivalent

Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches

STW20N60

Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
Contextual Info: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal