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    5N50 Search Results

    5N50 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    LM2675N-5.0/NOPB
    Texas Instruments SIMPLE SWITCHER® 6.5V to 40V, 1A Low Component Count Step-Down Regulator 8-PDIP -40 to 125 Visit Texas Instruments Buy

    5N50 Datasheets (19)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    5N50
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 27.17KB 1
    5N50
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 27.17KB 1
    badge 5N50A
    AK Semiconductor N-channel MOSFET 5N50A with 500V drain-source voltage, 5A continuous drain current, 1.3 ohm typical on-resistance at 10V gate-source voltage, and low gate charge, suitable for high-speed switching applications. Original PDF
    badge JMPF15N50BJ
    Jiangsu JieJie Microelectronics Co Ltd 500V, 15A N-channel Enhancement Mode Power MOSFET in TO-220FP-3L package with RDS(ON) less than 0.51 ohm at VGS = 10V, designed for fast switching, load switch, PWM, and power management applications. Original PDF
    badge HKTD5N50
    Shenzhen Heketai Electronics Co Ltd N-channel Power MOSFET with 500V drain-source voltage, 5A continuous drain current, 1.6Ω max RDS(ON) at VGS=10V, and TO-252 package, designed for high-density applications with fully characterized avalanche capability. Original PDF
    badge AKZE5N50
    AK Semiconductor N-Channel 500 V MOSFET with 1.2 ohm RDS(on) at 10 V VGS, 39 nC gate charge, TO-252 package, designed for high-frequency operation and featuring low input capacitance and avalanche current protection. Original PDF
    badge SL5N50D
    SLKOR RDS(ON) Max 1.5Ω, Gate Charge 18.5nC, 100% Avalanche Tested, TO-252, VDSS 500V, ID 5.0A, PD 98.4W, Tj -55 ~ +150°C. Original PDF
    badge JMPC25N50BJ
    Jiangsu JieJie Microelectronics Co Ltd 25A, 500V N-channel Enhancement Mode Power MOSFET in TO-220C-3L package with RDS(ON) less than 0.30 ohm at VGS = 10V, suitable for power management and PWM applications. Original PDF
    badge JMPF25N50BJ
    Jiangsu JieJie Microelectronics Co Ltd 500V, 25A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 0.30 ohm at VGS = 10V, designed for fast switching and power management applications in a TO-220FP-3L package. Original PDF
    badge SLD5N50S2
    Maplesemi 5A, 500V N-channel MOSFET with RDS(on) of 1.35 ohm at VGS = 10V, low gate charge of 10nC, high avalanche ruggedness, and fast switching performance in a DPAK package. Original PDF
    badge MDD5N50D
    Microdiode Semiconductor (MDD) Power Field-Effect Transistor Original PDF
    badge 25N50A
    AK Semiconductor 25N50A N-channel enhancement mode MOSFET with 500V drain-source voltage, 25A continuous drain current, 0.21Ω typical on-resistance at 10V gate-source voltage, and TO-220F, TO-247, TO-247S package options. Original PDF
    badge SLD_F5N50S2
    Maplesemi 500V N-Channel MOSFET with 5A continuous drain current, 1.3Ω typical RDS(on) at VGS = 10V, low gate charge of 11.6nC, and high avalanche energy endurance, suitable for high-efficiency power conversion applications. Original PDF
    badge 45N50A
    AK Semiconductor 45A 500V N-channel enhancement mode MOSFET with typical on-resistance of 0.08 ohm at VGS = 10V, low gate charge, and high dv/dt capability, available in TO-247 and TO-247S packages. Original PDF
    badge JMPF5N50BJ
    Jiangsu JieJie Microelectronics Co Ltd 500V, 5A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 1.81 ohms at VGS = 10V, featuring fast switching, improved dv/dt capability, and 100% UIS and ΔVds tested. Original PDF
    badge JMPK5N50BJ
    Jiangsu JieJie Microelectronics Co Ltd 500V, 5A N-channel Enhancement Mode Power MOSFET in TO-252-3L package with RDS(ON) less than 1.81 ohm at VGS = 10V, designed for power management, load switching, and PWM applications. Original PDF
    badge JMPC5N50BJ
    Jiangsu JieJie Microelectronics Co Ltd 500V, 5A N-channel Enhancement Mode Power MOSFET in TO-220C-3L package with RDS(ON) less than 1.81 ohms at VGS = 10V, designed for fast switching, PWM applications, and power management. Original PDF
    badge JMPC15N50BJ
    Jiangsu JieJie Microelectronics Co Ltd 500V, 15A N-channel Enhancement Mode Power MOSFET in TO-220C-3L package with RDS(ON) less than 0.51 ohm at VGS = 10V, suitable for fast switching, load switch, and power management applications. Original PDF
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    5N50 Price and Stock

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    onsemi FDH45N50F-F133

    Power MOSFET, N Channel, 500 V, 45 A, 0.105 ohm, TO-247, Through Hole - Rail/Tube (Alt: FDH45N50F-F133)
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    Avnet Americas FDH45N50F-F133 Tube 590 12 Weeks 1
    • 1 $3.36
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    Newark FDH45N50F-F133 Bulk 1,720 1
    • 1 $9.08
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    • 1000 $5.42
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    Ameya Holding Limited FDH45N50F-F133 19,379
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    Avnet Asia FDH45N50F-F133 12 Weeks 450
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    Avnet Silica FDH45N50F-F133 16 Weeks 30
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    EBV Elektronik FDH45N50F-F133 30 17 Weeks 30
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    Flip Electronics FDH45N50F-F133 167
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    Master Electronics FDH45N50F-F133 450
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    • 10000 $3.89
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    onsemi FQPF5N50CYDTU

    Power MOSFET, N-Channel, QFET?, 500 V, 5 A, 1.4 O, TO-220F - Rail/Tube (Alt: FQPF5N50CYDTU)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas FQPF5N50CYDTU Tube 1,600
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    TME FQPF5N50CYDTU 1
    • 1 $1.37
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    • 100 $0.97
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    Avnet Silica FQPF5N50CYDTU 53 Weeks 1,600
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    Flip Electronics FQPF5N50CYDTU 4,664
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    onsemi FDPF5N50T

    Power MOSFET, N-Channel, UniFETTM, 500 V, 5 A, 1.4 ?, TO-220F - Rail/Tube (Alt: FDPF5N50T)
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    Avnet Americas FDPF5N50T Tube 2,000
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    Rochester Electronics FDPF5N50T 8,000 1
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    Flip Electronics FDPF5N50T 1,827
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    Nisshinbo Micro Devices R1225N502C-TR-FE

    18.5V INPUT PWM/VFM BUCK DC/DC CONTROLLER - Tape and Reel (Alt: R1225N502C-TR-FE)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas R1225N502C-TR-FE Tape & Reel 12 Weeks 3,000
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    SiTime Corporation SIT1408BI-12-25N-50.000000E

    OSCILLATOR, SIT1408, -40 to 85C, 2520, 25ppm, 2.5V, 50MHz, OE, T&R - Tape and Reel (Alt: SIT1408BI-12-25N-50.000000E)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIT1408BI-12-25N-50.000000E Tape & Reel 6 Weeks 1,000
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    5N50 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    5n50

    Abstract: 5N50G 5n50 mosfet mosfet d 476
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5N50 Power MOSFET 5A, 500V N-CHANNEL POWER MOSFET 1 1 „ DESCRIPTION The UTC 5N50 is an N-channel power MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the


    Original
    o-262o-220fo-220f1o-252+5qw-r502-4765n505n50g5n50 mosfetmosfet d 476 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5N50 Preliminary Power MOSFET 500V N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UTC 5N50 is an N-channel MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the requirements of


    Original
    o-220fo-262o-252qw-r502-476 PDF

    Contextual Info: Advance Technical Information PolarHVTM Power MOSFET IXTA 5N50P IXTP 5N50P VDSS = 500 = 5 ID25 RDS on ≤ 1.3 V A Ω N-Channel Enhancement Mode Symbol VDSS VDGR VGSS VGSM Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Maximum Ratings


    Original
    5n50po-220o-263 PDF

    5N50

    Abstract: 5n50 mosfet 476 e data by 476 diode
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5N50 Preliminary Power MOSFET 5A, 500V N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UTC 5N50 is an N-channel power MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the


    Original
    o-220fo-262o-252qw-r502-476+45n505n50 mosfet476 edata by 476 diode PDF

    5n50 mosfet

    Abstract: 5n50 data by 476 diode 5N50G-TN3-R UTC5N50 5N50G-T2Q-T
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5N50 Power MOSFET 5A, 500V N-CHANNEL POWER MOSFET 1 TO-262 „ DESCRIPTION The UTC 5N50 is an N-channel power MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the


    Original
    o-262o-220fo-252qw-r502-476+65n50 mosfet5n50data by 476 diode5n50g-tn3-rutc5n505n50g-t2q-t PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5N50K Power MOSFET 65A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 5N50K is an N-channel power MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the


    Original
    5n50kqw-r502-870 PDF

    KF5N50

    Abstract: 5n50 KF 5N50 DPak KF5N50DZ KF5N50D 5N-50 D-PAK package KF5N dpak Package
    Contextual Info: SEMICONDUCTOR 5N50DZ MARKING SPECIFICATION DPAK PACKAGE 1. Marking method Laser Marking. 2. Marking 2 No. Item 5N50 1 DZ 3 801 Marking Description KF KEC Fresh FET 5N50 5N50 Revision DZ DPAK Lot No. 801 Device Name 2008. 12. 1 Revision No : 0 8 Year 0~9 : 2000~2009


    Original
    kf5n50dzkf5n505n50kf 5n50+6dpakkf5n50d5n-50d-pak packagekf5ndpak package PDF

    5n50

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5N50 Power MOSFET 5A, 500V N-CHANNEL POWER MOSFET  The UTC 5N50 is an N-channel power MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the requirements of


    Original
    o-262o-220fo-220f1o-252+2qw-r502-4765n50 PDF

    5N50

    Abstract: 5N50P
    Contextual Info: PolarHVTM Power MOSFET IXTA IXTP IXTV IXTY N-Channel Enhancement Mode Avalanche Rated VDSS = 500 V ID25 = 4.8 A RDS on ≤ 1.4 Ω 5N50P 5N50P 5N50P 5N50P TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original
    5n50po-2635n50 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5N50-P Power MOSFET 5A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 5N50-P is an N-channel power MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the


    Original
    5n50-pqw-r205-027 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5N50K-MT Power MOSFET 5A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 5N50K-MT is an N-channel power MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is


    Original
    5n50k-mtqw-r502-b22 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5N50K Power MOSFET 65A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 5N50K is an N-channel power MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the


    Original
    5n50kqw-r502-872 PDF

    5N50

    Abstract: 5N50P
    Contextual Info: Advance Technical Information PolarHVTM Power MOSFET VDSS = 500 V = 4.8 A ID25 RDS on ≤ 1.4 Ω IXTA 5N50P IXTP 5N50P IXTY 5N50P N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original
    5n50p405b25n50 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5N50K Power MOSFET 5A, 500V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 5N50K is an N-channel power MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the


    Original
    5n50ko-220fqw-r502-870 PDF

    5N50

    Abstract: HiperFET TR 505 diode 5N50PM ixtp.m
    Contextual Info: Preliminary Technical Information PolarHVTM HiPerFET Power MOSFET IXFP 5N50PM VDSS ID25 RDS on trr (Electrically Isolated Tab) = = ≤ ≤ 500 3.2 1.4 200 V A Ω ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings


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    5n50pm-55ions405b25n50+3hiperfettr 505 diodeixtp.m PDF

    5n50 mosfet

    Abstract: 5n50 t5n50 transistor 5N50 NTD5N50T4 NTD5N50-1 AN569 NTD5N50 SMD310
    Contextual Info: 5N50 Preferred Device Power MOSFET 5 Amps, 500 Volts N–Channel DPAK Designed for high voltage, high speed switching applications in power supplies, converters, power motor controls and bridge circuits. http://onsemi.com Features • • • • • •


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    ntd5n50r14525ntd5n50/d5n50 mosfet+75n50t5n50transistor 5n50ntd5n50t4ntd5n50-1an569smd310 PDF

    5n50c

    Abstract: 5N50
    Contextual Info: TM 5N50C / 5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    fqd5n50cfqu5n50co-251fqu5n50ctu+25n50c5n50 PDF

    5n50c

    Abstract: FQPF*5n50c 5n50
    Contextual Info: TM 5N50C/5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


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    fqp5n50c/fqpf5n50cfqpf5n50cfqpf5n50ctfqpf5n50cydtu+35n50cfqpf*5n50c5n50 PDF

    9n90c

    Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
    Contextual Info: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W


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    2n70002n7000a2n7000k70max+1345max55max80max9n90c9n50cigbt 20n50kmb*050n60p7n65c5n50csmd diode s4 58a2n60c2n60 mosfet smpsstr tv smps PDF

    5N20

    Abstract: 5n50 ME15N06E MF2N60E me15n MG2.5N20 MG2P50 MG2.5N50 ME10N10E-F ME12P06
    Contextual Info: - 146 - f m s tt € m & m m. * * _ K V * (V) f*t (A) * * MEIONIOE-F 0*0?- MOS N 100 DSS 10 D ME12P06 0*0*- MOS P -60 DSS -12 D ME12P06-F 0*0?- MOS P -60 DSS -12 D ME15N06E 0 *0?- MOS N 60 DSS 15 D ME15N06E-F 0 * 0 ?- MOS N 60 DSS 15 D MF2N60E 0 *0?- MOS


    OCR Scan
    me10n10e-fme12p06me12p06-fme15n06e+12me15n06e-fmf2n60emf4n60emf4n50emf5n50emf6n40e5n205n50me15nmg2.5n20mg2p50mg2.5n50 PDF

    5N50FT

    Abstract: 5N50T
    Contextual Info: 5N50T / 5N50FT 500V / 5A N-Channel Enhancement Mode MOSFET 500V, RDS ON =1.5W@VGS=10V, ID=2.5A Features TO-220AB ITO-220AB • Low On-State Resistance • Fast Switching • Low Gate Charge & Low CRSS • Fully Characterized Avalanche Voltage and Current


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    hy5n50thy5n50fto-220abito-220ab+42002/95/ecmil-std-7505n50t5n50ft PDF

    5n50 mosfet

    Abstract: 5n50 transistor 5N50
    Contextual Info: MOTOROLA MGM5N45 5N50 MGP5N45 5N50 SEM ICONDUCTOR TECHNICAL DATA D esigner’s D ata Sheet 5.0 AMPERE N-CHANNEL TM OS GEM FET N-CHANNEL ENHANCEMENT-MODE SILICON GATE, INSULATED GATE BIPOLAR TRANSISTOR rCE on = 1 6 Ohm 450 and 500 Volts These GEMFETS are designed fo r high voltage, h igh cu rren t


    OCR Scan
    mgm5n45mgm5n50mgp5n45mgp5n50+35n50 mosfet5n50transistor 5n50 PDF

    t5n50

    Abstract: 5n50 5n50 mosfet NTD5N50 NTD5N50T4 351 D-PAK
    Contextual Info: 5N50 Preferred Device Advance Information Power MOSFET 5 Amps, 500 Volts N–Channel DPAK Designed for high voltage, high speed switching applications in power supplies, converters, power motor controls and bridge circuits. http://onsemi.com 5 AMPERES 500 VOLTS


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    ntd5n50r14525ntd5n50/dt5n50+45n505n50 mosfetntd5n50t4351 d-pak PDF

    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Contextual Info: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


    OCR Scan
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