5N50 Search Results

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Part	ECAD Model	Manufacturer	Description	Download	Buy
LM2675N-5.0/NOPB		Texas Instruments	SIMPLE SWITCHER® 6.5V to 40V, 1A Low Component Count Step-Down Regulator 8-PDIP -40 to 125

5N50 Datasheets (19)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
5N50	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	27.17KB	1
5N50	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	27.17KB	1
5N50A	AK Semiconductor	N-channel MOSFET 5N50A with 500V drain-source voltage, 5A continuous drain current, 1.3 ohm typical on-resistance at 10V gate-source voltage, and low gate charge, suitable for high-speed switching applications.	Original	PDF
JMPF15N50BJ	Jiangsu JieJie Microelectronics Co Ltd	500V, 15A N-channel Enhancement Mode Power MOSFET in TO-220FP-3L package with RDS(ON) less than 0.51 ohm at VGS = 10V, designed for fast switching, load switch, PWM, and power management applications.	Original	PDF
HKTD5N50	Shenzhen Heketai Electronics Co Ltd	N-channel Power MOSFET with 500V drain-source voltage, 5A continuous drain current, 1.6Ω max RDS(ON) at VGS=10V, and TO-252 package, designed for high-density applications with fully characterized avalanche capability.	Original	PDF
AKZE5N50	AK Semiconductor	N-Channel 500 V MOSFET with 1.2 ohm RDS(on) at 10 V VGS, 39 nC gate charge, TO-252 package, designed for high-frequency operation and featuring low input capacitance and avalanche current protection.	Original	PDF
SL5N50D	SLKOR	RDS(ON) Max 1.5Ω, Gate Charge 18.5nC, 100% Avalanche Tested, TO-252, VDSS 500V, ID 5.0A, PD 98.4W, Tj -55 ~ +150°C.	Original	PDF
JMPC25N50BJ	Jiangsu JieJie Microelectronics Co Ltd	25A, 500V N-channel Enhancement Mode Power MOSFET in TO-220C-3L package with RDS(ON) less than 0.30 ohm at VGS = 10V, suitable for power management and PWM applications.	Original	PDF
JMPF25N50BJ	Jiangsu JieJie Microelectronics Co Ltd	500V, 25A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 0.30 ohm at VGS = 10V, designed for fast switching and power management applications in a TO-220FP-3L package.	Original	PDF
SLD5N50S2	Maplesemi	5A, 500V N-channel MOSFET with RDS(on) of 1.35 ohm at VGS = 10V, low gate charge of 10nC, high avalanche ruggedness, and fast switching performance in a DPAK package.	Original	PDF
MDD5N50D	Microdiode Semiconductor (MDD)	Power Field-Effect Transistor	Original	PDF
25N50A	AK Semiconductor	25N50A N-channel enhancement mode MOSFET with 500V drain-source voltage, 25A continuous drain current, 0.21Ω typical on-resistance at 10V gate-source voltage, and TO-220F, TO-247, TO-247S package options.	Original	PDF
SLD_F5N50S2	Maplesemi	500V N-Channel MOSFET with 5A continuous drain current, 1.3Ω typical RDS(on) at VGS = 10V, low gate charge of 11.6nC, and high avalanche energy endurance, suitable for high-efficiency power conversion applications.	Original	PDF
45N50A	AK Semiconductor	45A 500V N-channel enhancement mode MOSFET with typical on-resistance of 0.08 ohm at VGS = 10V, low gate charge, and high dv/dt capability, available in TO-247 and TO-247S packages.	Original	PDF

JMPF5N50BJ	Jiangsu JieJie Microelectronics Co Ltd	500V, 5A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 1.81 ohms at VGS = 10V, featuring fast switching, improved dv/dt capability, and 100% UIS and ΔVds tested.	Original	PDF
JMPK5N50BJ	Jiangsu JieJie Microelectronics Co Ltd	500V, 5A N-channel Enhancement Mode Power MOSFET in TO-252-3L package with RDS(ON) less than 1.81 ohm at VGS = 10V, designed for power management, load switching, and PWM applications.	Original	PDF
JMPC5N50BJ	Jiangsu JieJie Microelectronics Co Ltd	500V, 5A N-channel Enhancement Mode Power MOSFET in TO-220C-3L package with RDS(ON) less than 1.81 ohms at VGS = 10V, designed for fast switching, PWM applications, and power management.	Original	PDF
JMPC15N50BJ	Jiangsu JieJie Microelectronics Co Ltd	500V, 15A N-channel Enhancement Mode Power MOSFET in TO-220C-3L package with RDS(ON) less than 0.51 ohm at VGS = 10V, suitable for fast switching, load switch, and power management applications.	Original	PDF

5N50 Price and Stock

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onsemi FDB15N50 Transistor: N-MOSFET; unipolar; 500V; 11A; 300W; D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	FDB15N50		699		1	1 $3.95 10 $2.62 100 $2.28 1000 $2.28 10000 $2.28	Buy Now
Avnet Asia	FDB15N50			40 Weeks	800	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Silica	FDB15N50			14 Weeks	800	1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	FDB15N50			15 Weeks	800	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Intertechnologies SIHA25N50E-E3 Transistor: N-MOSFET; unipolar; 550V; 26A; 35W; TO220FP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SIHA25N50E-E3				1,000	1 - 10 - 100 - 1000 $2.03 10000 $2.03	Get Quote
TTI	SIHA25N50E-E3	Tube			1,000	1 - 10 - 100 - 1000 $1.73 10000 $1.73	Buy Now
EBV Elektronik	SIHA25N50E-E3			39 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Get Quote
onsemi FDD5N50NZTM Transistor: N-MOSFET; unipolar; 500V; 4A; Idm: 16A; 62W; DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	FDD5N50NZTM				2,500	1 - 10 - 100 - 1000 - 10000 $0.50	Get Quote
Newark ()	FDD5N50NZTM	Cut Tape	5,569		1	1 $1.94 10 $1.94 100 $0.91 1000 $0.74 10000 $0.71	Buy Now
	FDD5N50NZTM	Tape & Reel	5,569		100	1 - 10 - 100 $0.91 1000 $0.74 10000 $0.71	Buy Now
Chip 1 Exchange	FDD5N50NZTM		1,560			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Asia	FDD5N50NZTM			18 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Silica	FDD5N50NZTM			12 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Get Quote

EBV Elektronik	FDD5N50NZTM			13 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Master Electronics	FDD5N50NZTM					1 $0.74 10 $0.74 100 $0.74 1000 $0.68 10000 $0.46	Buy Now
Ingun Prufmittelbau GmbH GKS-912 217 175 N 5003 Test probe: ICT/FCT; 5A; Ø: 1.75mm; GKS-912; steel; 5N; plug-in
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	GKS-912 217 175 N 5003				1	1 $5.91 10 $5.54 100 $5.54 1000 $5.54 10000 $5.54	Get Quote
Vishay Intertechnologies SIHD5N50D-GE3 Transistor: N-MOSFET; unipolar; 500V; 3.4A; Idm: 10A; 104W
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SIHD5N50D-GE3				1	1 $0.82 10 $0.74 100 $0.59 1000 $0.55 10000 $0.55	Get Quote

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5N50 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
5n50 Abstract: 5N50G 5n50 mosfet mosfet d 476 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5N50 Power MOSFET 5A, 500V N-CHANNEL POWER MOSFET 1 1 DESCRIPTION The UTC 5N50 is an N-channel power MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the	Original	o-262 o-220f o-220f1 o-252 +5qw-r502-476 5n50 5n50g 5n50 mosfet mosfet d 476	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5N50 Preliminary Power MOSFET 500V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 5N50 is an N-channel MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the requirements of	Original	o-220f o-262 o-252 qw-r502-476	PDF
Contextual Info: Advance Technical Information PolarHVTM Power MOSFET IXTA 5N50P IXTP 5N50P VDSS = 500 = 5 ID25 RDS on ≤ 1.3 V A Ω N-Channel Enhancement Mode Symbol VDSS VDGR VGSS VGSM Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Maximum Ratings	Original	5n50p o-220 o-263	PDF
5N50 Abstract: 5n50 mosfet 476 e data by 476 diode Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5N50 Preliminary Power MOSFET 5A, 500V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 5N50 is an N-channel power MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the	Original	o-220f o-262 o-252 qw-r502-476 +45n50 5n50 mosfet 476 e data by 476 diode	PDF
5n50 mosfet Abstract: 5n50 data by 476 diode 5N50G-TN3-R UTC5N50 5N50G-T2Q-T Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5N50 Power MOSFET 5A, 500V N-CHANNEL POWER MOSFET 1 TO-262 DESCRIPTION The UTC 5N50 is an N-channel power MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the	Original	o-262 o-220f o-252 qw-r502-476 +65n50 mosfet 5n50 data by 476 diode 5n50g-tn3-r utc5n50 5n50g-t2q-t	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5N50K Power MOSFET 65A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 5N50K is an N-channel power MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the	Original	5n50k qw-r502-870	PDF
KF5N50 Abstract: 5n50 KF 5N50 DPak KF5N50DZ KF5N50D 5N-50 D-PAK package KF5N dpak Package Contextual Info: SEMICONDUCTOR 5N50DZ MARKING SPECIFICATION DPAK PACKAGE 1. Marking method Laser Marking. 2. Marking 2 No. Item 5N50 1 DZ 3 801 Marking Description KF KEC Fresh FET 5N50 5N50 Revision DZ DPAK Lot No. 801 Device Name 2008. 12. 1 Revision No : 0 8 Year 0~9 : 2000~2009	Original	kf5n50dz kf5n50 5n50 kf 5n50 +6dpak kf5n50d 5n-50 d-pak package kf5n dpak package	PDF
5n50 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5N50 Power MOSFET 5A, 500V N-CHANNEL POWER MOSFET  The UTC 5N50 is an N-channel power MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the requirements of	Original	o-262 o-220f o-220f1 o-252 +2qw-r502-476 5n50	PDF
5N50 Abstract: 5N50P Contextual Info: PolarHVTM Power MOSFET IXTA IXTP IXTV IXTY N-Channel Enhancement Mode Avalanche Rated VDSS = 500 V ID25 = 4.8 A RDS on ≤ 1.4 Ω 5N50P 5N50P 5N50P 5N50P TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	5n50p o-263 5n50	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5N50-P Power MOSFET 5A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 5N50-P is an N-channel power MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the	Original	5n50-p qw-r205-027	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5N50K-MT Power MOSFET 5A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 5N50K-MT is an N-channel power MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is	Original	5n50k-mt qw-r502-b22	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5N50K Power MOSFET 65A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 5N50K is an N-channel power MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the	Original	5n50k qw-r502-872	PDF
5N50 Abstract: 5N50P Contextual Info: Advance Technical Information PolarHVTM Power MOSFET VDSS = 500 V = 4.8 A ID25 RDS on ≤ 1.4 Ω IXTA 5N50P IXTP 5N50P IXTY 5N50P N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	5n50p 405b2 5n50	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5N50K Power MOSFET 5A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N50K is an N-channel power MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the	Original	5n50k o-220f qw-r502-870	PDF

5N50 Abstract: HiperFET TR 505 diode 5N50PM ixtp.m Contextual Info: Preliminary Technical Information PolarHVTM HiPerFET Power MOSFET IXFP 5N50PM VDSS ID25 RDS on trr (Electrically Isolated Tab) = = ≤ ≤ 500 3.2 1.4 200 V A Ω ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings	Original	5n50pm -55ions 405b2 5n50 +3hiperfet tr 505 diode ixtp.m	PDF
5n50 mosfet Abstract: 5n50 t5n50 transistor 5N50 NTD5N50T4 NTD5N50-1 AN569 NTD5N50 SMD310 Contextual Info: 5N50 Preferred Device Power MOSFET 5 Amps, 500 Volts N–Channel DPAK Designed for high voltage, high speed switching applications in power supplies, converters, power motor controls and bridge circuits. http://onsemi.com Features • • • • • •	Original	ntd5n50 r14525 ntd5n50/d 5n50 mosfet +75n50 t5n50 transistor 5n50 ntd5n50t4 ntd5n50-1 an569 smd310	PDF
5n50c Abstract: 5N50 Contextual Info: TM 5N50C / 5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to	Original	fqd5n50c fqu5n50c o-251 fqu5n50ctu +25n50c 5n50	PDF
5n50c Abstract: FQPF*5n50c 5n50 Contextual Info: TM 5N50C/5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to	Original	fqp5n50c/fqpf5n50c fqpf5n50c fqpf5n50ct fqpf5n50cydtu +35n50c fqpf*5n50c 5n50	PDF
9n90c Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS Contextual Info: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W	Original	2n7000 2n7000a 2n7000k 70max +1345max 55max 80max 9n90c 9n50c igbt 20n50 kmb*050n60p 7n65c 5n50c smd diode s4 58a 2n60c 2n60 mosfet smps str tv smps	PDF
5N20 Abstract: 5n50 ME15N06E MF2N60E me15n MG2.5N20 MG2P50 MG2.5N50 ME10N10E-F ME12P06 Contextual Info: - 146 - f m s tt € m & m m. * * _ K V * (V) ft (A) * MEIONIOE-F 00?- MOS N 100 DSS 10 D ME12P06 00- MOS P -60 DSS -12 D ME12P06-F 00?- MOS P -60 DSS -12 D ME15N06E 0 0?- MOS N 60 DSS 15 D ME15N06E-F 0 0 ?- MOS N 60 DSS 15 D MF2N60E 0 *0?- MOS	OCR Scan	me10n10e-f me12p06 me12p06-f me15n06e +12me15n06e-f mf2n60e mf4n60e mf4n50e mf5n50e mf6n40e 5n20 5n50 me15n mg2.5n20 mg2p50 mg2.5n50	PDF
5N50FT Abstract: 5N50T Contextual Info: 5N50T / 5N50FT 500V / 5A N-Channel Enhancement Mode MOSFET 500V, RDS ON =1.5W@VGS=10V, ID=2.5A Features TO-220AB ITO-220AB • Low On-State Resistance • Fast Switching • Low Gate Charge & Low CRSS • Fully Characterized Avalanche Voltage and Current	Original	hy5n50t hy5n50ft o-220ab ito-220ab +42002/95/ec mil-std-750 5n50t 5n50ft	PDF
5n50 mosfet Abstract: 5n50 transistor 5N50 Contextual Info: MOTOROLA MGM5N45 5N50 MGP5N45 5N50 SEM ICONDUCTOR TECHNICAL DATA D esigner’s D ata Sheet 5.0 AMPERE N-CHANNEL TM OS GEM FET N-CHANNEL ENHANCEMENT-MODE SILICON GATE, INSULATED GATE BIPOLAR TRANSISTOR rCE on = 1 6 Ohm 450 and 500 Volts These GEMFETS are designed fo r high voltage, h igh cu rren t	OCR Scan	mgm5n45 mgm5n50 mgp5n45 mgp5n50 +35n50 mosfet 5n50 transistor 5n50	PDF
t5n50 Abstract: 5n50 5n50 mosfet NTD5N50 NTD5N50T4 351 D-PAK Contextual Info: 5N50 Preferred Device Advance Information Power MOSFET 5 Amps, 500 Volts N–Channel DPAK Designed for high voltage, high speed switching applications in power supplies, converters, power motor controls and bridge circuits. http://onsemi.com 5 AMPERES 500 VOLTS	Original	ntd5n50 r14525 ntd5n50/d t5n50 +45n50 5n50 mosfet ntd5n50t4 351 d-pak	PDF
IRFD1Z3 equivalent Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit Contextual Info: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with out further notice to any products herein to improve reliability, function or design. Motorola does not	OCR Scan	vp1204n tp8p08 5001d vp1206n +141208n 5002d 1209n vp1209n irfd1z3 equivalent 8n60 equivalent tp8n20 tp8n10 siemens semiconductor manual what is comparable with irf 3205 2n6823 irf8408 mtm5n90 designers datasheet smps cook circuit	PDF

5N50 Search Results

5N50 Result Highlights (1)

5N50 Datasheets (19)

5N50 Price and Stock

onsemi FDB15N50

Vishay Intertechnologies SIHA25N50E-E3

onsemi FDD5N50NZTM

Ingun Prufmittelbau GmbH GKS-912 217 175 N 5003

Vishay Intertechnologies SIHD5N50D-GE3

5N50 Datasheets Context Search

5n50

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9n90c

5N20

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5n50 mosfet

t5n50

IRFD1Z3 equivalent