5n50 mosfet
Abstract: 5n50 transistor 5N50
Contextual Info: MOTOROLA MGM5N45 MGM5N50 MGP5N45 MGP5N50 SEM ICONDUCTOR TECHNICAL DATA D esigner’s D ata Sheet 5.0 AMPERE N-CHANNEL TM OS GEM FET N-CHANNEL ENHANCEMENT-MODE SILICON GATE, INSULATED GATE BIPOLAR TRANSISTOR rCE on = 1 6 Ohm 450 and 500 Volts These GEMFETS are designed fo r high voltage, h igh cu rren t
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mgm5n45mgm5n50mgp5n45mgp5n50+35n50 mosfet5n50transistor 5n50
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MGM5N45
Abstract: MGM5N50 MGP5N45 MGP5N50
Contextual Info: MGM5N45 MGM5N50 MGP5N45 MGP5N50 N-CHANNEL ENHANCEMENT MODE SILICON GATE, GAIN ENHANCED MOS FIELD EFFECT TRANSISTOR These GEMFETS are designed for high voltage, high current power controls such as line operated motor controls and converters. o High Input Impedance
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mgm5n45mgm5n50mgp5n45mgp5n50+3o-204aa1092bsc546bsc
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triac zd 607
Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.
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sg73/dtriac zd 6071n5204ca2820 trw+72n4427 equivalent bfr912n6823842 317 so8bd243 pinoutbd529bf506bf845
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1RFZ40
Abstract: 1RF150 MTP25N10E mth7n50 Transistor MTP35N06E BUZ80a equivalent buz90 equivalent MTP40N06M MFE9200 MTH7N50
Contextual Info: MOTOROLA SC X S T R S /R IME D | F b3b?2S4 Q O fl' iB n 1 | J l 9 / - 6 0 Selection by Package The product listed in Tables t through 22 have been com piled on an IBM or compatible personal computer disk for quick selection of product. This versatile disk may be obtained
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dk101/d0020-frj1rfz401rf150+8mtp25n10emth7n50 transistormtp35n06ebuz80a equivalentbuz90 equivalentmtp40n06mmfe9200mth7n50
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20N15
Abstract: 35n05 mje13002 to92 ur3060 AN803 motorola 2N6823 isolated dc-dc mc34063 mje12007 Motorola Switchmode 1 special
Contextual Info: C O N TE N TS Page What Everyone Should Know About Switching Power Supplies In tro du ctio n. Comparison w ith Linear Regulations.
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20n1535n05mje13002 to92ur3060+5an803 motorola2n6823isolated dc-dc mc34063mje12007motorola switchmode 1 special
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IRFD1Z3 equivalent
Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
Contextual Info: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with out further notice to any products herein to improve reliability, function or design. Motorola does not
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vp1204ntp8p085001dvp1206n+141208n5002d1209nvp1209nirfd1z3 equivalent8n60 equivalenttp8n20tp8n10siemens semiconductor manualwhat is comparable with irf 32052n6823irf8408mtm5n90 designers datasheetsmps cook circuit
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MTE65N12 MOSFETs
Abstract: MTE65N12 MTE100N05 MTE60N20 MTE75N10 MTE65N15 MTE20N55 MTE30N40 to-204aa MTE20N60
Contextual Info: POWER TRANSISTORS — TMOS METAL continued Energy Management Series TMOS Power MOSFETs D Pd = 250 W Mounting base is connected to the drain. rOS(on) @ Id iD(Cont) (Amp) PD @ TC = 25°C (Watts) MTE20N60 20 250 10 MTE20N55 20 250 0.20 12.5 MTE25N50 25 250
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