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    DPAK Search Results

    DPAK Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    TK5R1P08QM
    Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 84 A, 0.0051 Ohm@10V, DPAK Datasheet
    TK6R9P08QM
    Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 62 A, 0.0069 Ohm@10V, DPAK Datasheet

    DPAK Datasheets (1)

    STMicroelectronics
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    DPAK
    STMicroelectronics DPAK - ASD & DISCRETES - TOURS Original PDF 29.96KB 1
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    Samtec Inc QTE-028-02-L-D-DP-A-K-TR

    Connector: PCB to PCB; male; data; PIN: 56; vertical; 2A; 225V; SMT
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    TME QTE-028-02-L-D-DP-A-K-TR 745 8
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    Newark QTE-028-02-L-D-DP-A-K-TR Bulk 4 1
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    Fischer Elektronik GmbH & Co KG FK24408DPAK

    Heatsink: moulded; DPAK,TO252; L: 8mm; W: 23mm; H: 10mm; 31.5K/W; SMT
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    TME FK24408DPAK 705 1
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    Samtec Inc QSE-042-01-L-D-DP-A-K-TR

    Connector: PCB to PCB; socket; data; PIN: 84; straight; 23A; 225V
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    TME QSE-042-01-L-D-DP-A-K-TR 565 9
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    Powell Electronics QSE-042-01-L-D-DP-A-K-TR 373 500
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    Samtec Inc QSE-028-01-H-D-DP-A-K-TR

    Connector: PCB to PCB; data; PIN: 56; straight
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    TME QSE-028-01-H-D-DP-A-K-TR 521 8
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    Samtec Inc QSH-020-01-H-D-DP-A-K-TR

    Connector: PCB to PCB; data; PIN: 40; straight; 2A; 0.5mm; H: 5mm; LCP
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    TME QSH-020-01-H-D-DP-A-K-TR 475 8
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    Mouser Electronics QSH-020-01-H-D-DP-A-K-TR 1,160
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    DPAK Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    POWER MOSFET 4600

    Abstract: 1A 700V MOSFET
    Contextual Info: TSM2N70 700V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 700 6.5 @ VGS =10V 1 General Description The TSM2N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.


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    tsm2n70o-220o-251o-252+2power mosfet 46001a 700v mosfet PDF

    TSM2NB60

    Abstract: mosfet 600V 2A
    Contextual Info: Preliminary TSM2NB60 600V N-Channel Power MOSFET TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 600 4.4 @ VGS =10V 1 General Description The TSM2NB60 N-Channel Power MOSFET is produced by new advance planar process. This advanced


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    tsm2nb60o-251o-252tsm2nb60ch+275pcsmosfet 600v 2a PDF

    TSC5304EDCP

    Abstract: TSC5304EDCH marking E11 DIODE power transistor Ic 4A NPN to - 251
    Contextual Info: TSC5304ED High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 0.25V (Typ.) @ IC=0.5A, IB=0.1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation


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    tsc5304edo-251o-252tsc5304edcp+4tsc5304edch75pcsmarking e11 diodepower transistor ic 4a npn to - 251 PDF

    marking code C12

    Contextual Info: TS1085 3A Low Dropout Positive Voltage Regulator TO-220 TO-263 2 D PAK TO-252 (DPAK) Pin Definition: 1. Fixed / Adj 2. Output 3. Input Pin 2 connect to heat sink General Description TS1085 are high performance positive voltage regulators are designed for use in applications requiring low


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    ts1085o-220o-263o-252+1marking code c12 PDF

    A12 diode

    Abstract: MOSFET 900V TO-220 MOSFET 50V 100A TO-220 power mosfet 900v
    Contextual Info: TSM3N90 900V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 900 5.1 @ VGS =10V 1.5 General Description TO-251 (IPAK) The TSM3N90 TO-252 (DPAK) N-Channel Power MOSFET is produced by new advance planar process. This


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    tsm3n90o-220ito-220o-251+8o-252tsm3n90chtsm3n90cptsm3n90cza12 diodemosfet 900v to-220mosfet 50v 100a to-220power mosfet 900v PDF

    TSM10N06

    Contextual Info: TSM10N06 60V N-Channel MOSFET TO-252 DPAK PRODUCT SUMMARY VDS (V) RDSON (mΩ) Pin Definition: 1. Gate 2. Drain 3. Source 60 Features ID (A) 65 @ VGS = 10V 10 80 @ VGS = 5V 10 110 @ VGS = 4V 9 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance


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    tsm10n06o-252tsm10n06cp PDF

    7n52

    Abstract: 1525P
    Contextual Info: STB7N52K3, STD7N52K3 STF7N52K3, STP7N52K3 N-channel 525 V, 0.72 Ω, 6 A SuperMESH3 Power MOSFET in D²PAK, DPAK, TO-220FP and TO-220 packages Datasheet — production data Features Order codes TAB VDSS RDS on max. ID TAB Pw 2 3 1 2 3 STB7N52K3 STD7N52K3


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    stb7n52k3std7n52k3stf7n52k3stp7n52k3+4o-220fpo-2207n521525p PDF

    Contextual Info: Package Reliability www.vishay.com Vishay Siliconix ENVIRONMENTAL AND PACKAGE TESTING DATA FOR DPAK, TO-252, TO-251 STRESS SAMPLE SIZE DEVICE HR./CYC CONDITION TOTAL FAILS BOND INT 40 20 000 200 C + N2 FAIL PERCENTAGE 0.00 HAST 1691 169 100 130 C, 85 % RH


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    o-252o-251m200308-may-12 PDF

    VND1NV04TR-E

    Abstract: Power MOSFET SOT-223 VND1NV04-E min33 OMNIFET
    Contextual Info: VND1NV04 VNN1NV04 - VNS1NV04 OMNIFET II fully autoprotected Power MOSFET Features Parameter Symbol Value Max on-state resistance per ch. RON 250 mΩ ILIMH 1.7 A VCLAMP 40 V Current limitation (typ) Drain-source clamp voltage 3 1 TO-252 (DPAK) 2 1 • Linear current limitation


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    vnd1nv04vnn1nv04vns1nv04o-252+6ot-223vnd1nv04tr-epower mosfet sot-223vnd1nv04-emin33omnifet PDF

    A 673 C2 transistor

    Abstract: tip41 369D-01
    Contextual Info: MJD41C, NJVMJD41CT4G NPN , MJD42C, NJVMJD42CT4G, NJVMJD42CRLG (PNP) Complementary Power Transistors http://onsemi.com DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTORS


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    mjd41cnjvmjd41ct4gmjd42cnjvmjd42ct4g+7njvmjd42crlgtip41tip42aec-q101mjd41c/da 673 c2 transistor369d-01 PDF

    SMD L4 Regulator SOT-223

    Abstract: smd CODE 95 SOT-223 NCV4274ADS33R4G NCV4274AST33T3G 8 lead sot-223 60S sot223 418af NCV4274DT33RKG
    Contextual Info: NCV4274, NCV4274A 400 mA 2% and 4%Voltage Regulator Family Description The NCV4274 and NCV4274A is a precision micro−power voltage regulator with an output current capability of 400 mA available in the DPAK, D2PAK and SOT−223 packages. The output voltage is accurate within ±2.0% or ±4.0% depending on


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    ncv4274ncv4274aot-223ncv4274/d+8smd l4 regulator sot-223smd code 95 sot-223ncv4274ads33r4gncv4274ast33t3g8 lead sot-22360s sot223418afncv4274dt33rkg PDF

    T20P06LG

    Abstract: P06LG T20 P06LG 20p06 NTDV20P06L marking T20 NTDV20P06LT4G NTDV20 20P06L ntd20p06lg
    Contextual Info: NTD20P06L, NTDV20P06L Power MOSFET −60 V, −15.5 A, Single P−Channel, DPAK Features • • • • Withstands High Energy in Avalanche and Commutation Modes Low Gate Charge for Fast Switching AEC Q101 Qualified − NTDV20P06L These Devices are Pb−Free and are RoHS Compliant


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    ntd20p06lntdv20p06lntd20p06l/dt20p06lg+8p06lgt20 p06lg20p06marking t20ntdv20p06lt4gntdv2020p06lntd20p06lg PDF

    2N62K3

    Abstract: STD2N62K3 STP2N62K3
    Contextual Info: STB2N62K3, STD2N62K3, STF2N62K3, STP2N62K3, STU2N62K3 N-channel 620 V, 3 Ω, 2.2 A SuperMESH3 Power MOSFET in D²PAK, DPAK, TO-220FP, TO-220 and IPAK packages Datasheet — production data Features TAB Order codes VDSS RDS on max ID PTOT 3 2 3 STB2N62K3


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    stb2n62k3std2n62k3stf2n62k3stp2n62k3+4stu2n62k3o-220fpo-2202n62k3 PDF

    NJVMJD47T4G

    Contextual Info: MJD47, NJVMJD47T4G, MJD50 High Voltage Power Transistors DPAK For Surface Mount Applications Designed for line operated audio output amplifier, switchmode supply drivers and other switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves


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    mjd47njvmjd47t4gmjd50tip47+4tip50aec-q101njvmjd47tmjd47/d PDF

    b01619

    Abstract: D6NM60N
    Contextual Info: STx6NM60N N-channel 600 V, 0.85 Ω, 4.6 A MDmesh II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK Features Type VDSS @Tjmax RDS(on) max ID STB6NM60N 650 V < 0.92 Ω 4.6 A STD6NM60N 650 V < 0.92 Ω 4.6 A STD6NM60N-1 650 V < 0.92 Ω 4.6 A STF6NM60N


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    stx6nm60no-220o-220fpstb6nm60n+6std6nm60nstd6nm60n-1stf6nm60nstp6nm60nb01619d6nm60n PDF

    NJVMJD31CT4G

    Abstract: NJVMJD31T4G
    Contextual Info: MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G NPN , MJD32, NJVMJD32T4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP) Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. http://onsemi.com


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    mjd31njvmjd31t4gmjd31cnjvmjd31ct4g+6mjd32njvmjd32t4gmjd32cnjvmjd32cgnjvmjd32ct4gtip31 PDF

    STP13NM60

    Abstract: 13NM60 STD13NM60 STF13NM60 STU13NM60 stb13nm60 13nm60n STW1 STB13NM60N MJ430
    Contextual Info: STx13NM60N N-channel 600 V, 0.28 Ω, 11 A MDmesh II Power MOSFET in D²PAK, DPAK, TO-220FP, I²PAK, TO-220, IPAK, TO-247 Features TAB Order codes VDSS @Tjmax RDS(on) max TAB 3 ID 1 3 1 STB13NM60N STD13NM60N STF13NM60N STI13NM60N STP13NM60N STU13NM60N


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    stx13nm60no-220fpo-220o-247+15stb13nm60nstd13nm60nstf13nm60nsti13nm60nstp13nm60nstu13nm60nstp13nm6013nm60std13nm60stf13nm60stu13nm60stb13nm6013nm60nstw1mj430 PDF

    L046

    Contextual Info: LP8345 LP8345 Low Dropout, Low IQ, 500mA CMOS Linear Regulator Literature Number: SNVS229E October 19, 2011 LP8345 Low Dropout, Low IQ, 500mA CMOS Linear Regulator General Description Features The LP8345 low-dropout CMOS linear regulator are available in 5V, 3.3V, 2.5V, 1.8V or adjustable output versions. Packaged in our 6ld LLP package and 3ld DPAK they can deliver


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    lp8345500masnvs229el046 PDF

    g18n40

    Abstract: NGD18N40CLBT4G 350VVGE NGD18N40A Direct fuel injection
    Contextual Info: NGD18N40CLB, NGD18N40ACLB Ignition IGBT, 18 A, 400 V N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses


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    ngd18n40clbngd18n40aclbngd18n40clb/dg18n40+4ngd18n40clbt4g350vvgengd18n40adirect fuel injection PDF

    MJD350t4g

    Contextual Info: MJD340, NJVMJD340T4G NPN , MJD350, NJVMJD350T4G (PNP) High Voltage Power Transistors http://onsemi.com DPAK For Surface Mount Applications Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications.


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    mjd340njvmjd340t4gmjd350njvmjd350t4g+5mje340mje350aec-q101mjd340/dmjd350t4g PDF

    N3LG

    Abstract: SPICE QT 60 CIRCUIT DIAGRAMS 20N3L MTD20N03L NVD20N03L27 20n3 20N3LG
    Contextual Info: NTD20N03L27, NVD20N03L27 Power MOSFET 20 Amps, 30 Volts, N−Channel DPAK This logic level vertical power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in.


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    ntd20n03l27nvd20n03l27ntd20n03l27/dn3lg+5spice qt 60 circuit diagrams20n3lmtd20n03l20n320n3lg PDF

    BYQ28

    Abstract: BYQ28E BYQ28E-200 BYQ28EB BYQ28ED-200 diode BYq28 sym084
    Contextual Info: BYQ28 series E and ED Rectifier diodes ultrafast, rugged Rev. 04 — 5 December 2007 Product data sheet 1. Product profile 1.1 General description Ultrafast, dual common cathode, epitaxial rectifier diodes in a SOT78 TO-220AB and a SOT428 (DPAK) plastic package.


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    byq28o-220abot428byq28e+5byq28e-200byq28ebbyq28ed-200diode byq28sym084 PDF

    BYV25D

    Abstract: BYV25D-600
    Contextual Info: BYV25D-600 Rectifier diode, ultrafast Rev. 01 — 29 July 2008 Product data sheet 1. Product profile 1.1 General description Ultrafast, epitaxial rectifier diode in a SOT428 DPAK surface-mountable plastic package. 1.2 Features • Fast switching ■ Soft recovery characteristic


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    byv25d-600ot428byv25d PDF

    l078b

    Abstract: marking l078b 4925 B transistor LP8340CDT-5.0 LP8340CLD-ADJ LP8340 LP8340C LP8340CLDX-ADJ LP8340I L082
    Contextual Info: LP8340 Low Dropout, Low IQ, 1.0A CMOS Linear Regulator General Description Features The LP8340 low-dropout CMOS linear regulator is available in 5V, 3.3V, 2.5V, 1.8V and adjustable output versions. Packaged in the 6ld LLP package and 3ld DPAK. The LP8340 can


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    lp8340420mv540mv670mv+11680mv800mal078bmarking l078b4925 b transistorlp8340cdt-5.0lp8340cld-adjlp8340clp8340cldx-adjlp8340il082 PDF