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    140N10 Search Results

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    Littelfuse Inc IXFH140N10P

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    Master Electronics IXFH140N10P
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    onsemi FQA140N10

    - Rail/Tube (Alt: FQA140N10)
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    Avnet Americas () FQA140N10 Tube 450
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    FQA140N10 Tube 13 Weeks 450
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    TME FQA140N10 12 1
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    Littelfuse Inc IXFT140N10P

    Discmosfetn-Ch Hiperfet-Polar To-268Aa/; |Littelfuse IXFT140N10P
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    Littelfuse Inc IXTT140N10P

    Mosfet, N-Ch, 100V, 140A, To-268-3; |Littelfuse IXTT140N10P
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    Flip Electronics IXTT140N10P 780
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    Littelfuse Inc IXTQ140N10P

    Disc Mosfet N-Ch Std-Polar To-3P (3)/ Tu; |Littelfuse IXTQ140N10P
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    140N10 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Advance Technical Information IXFH 140N10P VDSS ID25 PolarHVTM HiPerFET IXFT 140N10P Power MOSFETs = = = RDS on 100 V 140 A Ω 11 mΩ N-Channel Enhancement Mode Fast Intrinsic Diode; Avalanche Rated TO-247 (IXFT) Symbol Test Conditions Maximum Ratings VDSS


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    140n10po-247065b1728b1+1123b1 PDF

    Contextual Info: PolarHVTM HiPerFET IXFH 140N10P IXFT 140N10P Power MOSFETs VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 100


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    140n10p PDF

    140N1

    Contextual Info: PolarHVTM HiPerFET IXFH 140N10P IXFT 140N10P Power MOSFETs VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 100


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    140n10p140n1 PDF

    140N10P

    Abstract: 140n10
    Contextual Info: IXTQ 140N10P IXTT 140N10P PolarHTTM Power MOSFET VDSS ID25 RDS on = = ≤ 100 V 140 A Ω 11 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 100 100


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    140n10p140n10 PDF

    Contextual Info: IXTQ 140N10P IXTT 140N10P PolarHTTM Power MOSFET VDSS ID25 RDS on = = ≤ 100 V 140 A Ω 11 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 100 100


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    140n10p PDF

    140n10

    Contextual Info: Advanced Technical Information IXTQ 140N10P IXTT 140N10P PolarHTTM Power MOSFET VDSS ID25 RDS on = = = 100 V 140 A Ω 11 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


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    140n10po-268065b1728b1+2123b1140n10 PDF

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Contextual Info: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


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    ixtd08n100p-1aixtq22n60pixfh20n80pdws20-200a+6ixfh24n80pixfk180n15pixtq22n50pdwhp16-12ixgh64n60a3ixfb50n80q2 PDF

    220FP

    Abstract: STH140N10F4-2
    Contextual Info: 140N10F4-2, 140N10F4 140N10F4 N-channel 100 V, 6.5 mΩ, 120 A TO-220, H2PAK, TO-220FP STripFET DeepGATE™ Power MOSFET Preliminary data Features Type VDSS RDS on max ID 140N10F4-2 100 V < 8.1 mΩ 120 A 140N10F4 100 V < 8.5 mΩ 50 A 140N10F4


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    sth140n10f4-2stf140n10f4stp140n10f4o-220+2o-220fp220fp PDF

    STP140N10F4

    Abstract: 745 diode STF140N10F4 STH140N10F4-2 sth140n10f4 140N1 140n10
    Contextual Info: 140N10F4-2, 140N10F4 140N10F4 N-channel 100 V, 6.5 mΩ, 120 A TO-220, H2PAK, TO-220FP STripFET DeepGATE™ Power MOSFET Preliminary data Features Type VDSS RDS on max ID 140N10F4-2 100 V < 8.1 mΩ 120 A 140N10F4 100 V < 8.5 mΩ 50 A 140N10F4


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    sth140n10f4-2stf140n10f4stp140n10f4o-220+5o-220fp745 diodesth140n10f4140n1140n10 PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


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    ms-01310-pin5m-1994mo-229+107n60b equivalent18n50 equivalentixgh 1499mosfet smd 4407ixdd 614c 547 b w57 bjt transistorr1275ns20lr1271ns12cixys cs 20-22 mof1ixtp 220n04t2 PDF

    STW20N60

    Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
    Contextual Info: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal


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    o-220isoplus220tmo-247isoplus247tm+15o-264isoplus264tmplus220plus220smdo-252stw20n602n60pixfb100n50ixfb100n50pstw20n60fdixfb100n50p to-264ixys ixfn100n50pixfn48n60pixfh30n60pixfn100n50p PDF

    DIODE 1334

    Abstract: 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP 200N10P-88
    Contextual Info: Chip-Shortform2004.pmd PolarHTTM MOSFET, very low RDS on Type VDSS max. RDSon max. Chip type Chip size dimensions 11 Source bond wire recommended Equivalent device data sheet 26.10.2004, 12:44 V mΩ mm mils IXTD 110N055P-5S 55 21 5S 6.20 x 5.20 244 x 205


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    110n055p-5s75n10p-5s110n10p-6s140n10p-7s+15170n10p-8s200n10p-8862n15p-5s96n15p-6s120n15p-7s150n15p-8sdiode 13341334 diode96n2036n30p equivalent88n30100n25p36n30ixtp75n10pixtp ixtp ixtp ixtp PDF

    140n10

    Abstract: STP140N10F4 STF140N10F4
    Contextual Info: 140N10F4, 140N10F4 140N10F4 N-channel 100 V, 5.2 mΩ, 60 A TO-220, D2PAK, TO-220FP STripFET DeepGATE™ Power MOSFET Preliminary Data Features Type VDSS RDS on max ID 140N10F4 100 V < 6.5 mΩ 140 A 140N10F4 100 V < 6.5 mΩ 55 A 140N10F4


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    stb140n10f4stf140n10f4stp140n10f4o-220+2o-220fp140n10 PDF