140N1 Search Results

140N1 Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TW140N120C		Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET, 1200 V, 20 A, 0.182 Ω@18 V, TO-247	Datasheet

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Littelfuse Inc IXFH140N10P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	IXFH140N10P					1 $11.45 10 $11.45 100 $10.41 1000 $4.97 10000 $4.97	Buy Now
Newark	IXFH140N10P	Bulk			300	1 - 10 - 100 - 1000 $6.42 10000 $6.03	Buy Now
RS	IXFH140N10P	Bulk		8 Weeks	30	1 - 10 - 100 $9.56 1000 $9.56 10000 $9.56	Get Quote
Infineon Technologies AG IKY140N120CH7XKSA1 - Rail/Tube (Alt: IKY140N120CH7XKSA1)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	IKY140N120CH7XKSA1	Tube	90	45 Weeks	1	1 $12.31 10 $7.84 100 $7.04 1000 $7.04 10000 $7.04	Buy Now
Newark	IKY140N120CH7XKSA1	Bulk	216		1	1 $15.95 10 $11.29 100 $10.45 1000 $10.03 10000 $10.03	Buy Now
TME	IKY140N120CH7XKSA1				240	1 - 10 - 100 - 1000 $9.42 10000 $9.42	Get Quote
EBV Elektronik	IKY140N120CH7XKSA1			53 Weeks	240	1 - 10 - 100 - 1000 - 10000 -	Get Quote
onsemi FQA140N10 - Rail/Tube (Alt: FQA140N10)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas ()	FQA140N10	Tube			450	1 - 10 - 100 - 1000 $10.75 10000 $10.21	Get Quote
	FQA140N10	Tube		13 Weeks	450	1 - 10 - 100 - 1000 $3.87 10000 $3.81	Buy Now
TME	FQA140N10		12		1	1 $7.48 10 $6.15 100 $4.71 1000 $4.71 10000 $4.71	Buy Now
Avnet Asia	FQA140N10			13 Weeks	450	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Silica	FQA140N10			15 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	FQA140N10			16 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Get Quote

Flip Electronics	FQA140N10		330			1 $8.17 10 $8.17 100 $8.17 1000 $8.17 10000 $8.17	Get Quote
WeEn Semiconductor Co Ltd WG140N120HFP1Q WG140N120HFP1/TO247P/STANDARD MARKING HORIZONTAL, RAIL PAC - Rail/Tube (Alt: WG140N120HFP1Q)*
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	WG140N120HFP1Q	Tube		28 Weeks	1,800	1 - 10 - 100 - 1000 - 10000 $5.28	Buy Now
Avnet Asia	WG140N120HFP1Q			28 Weeks	1,800	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG IKQ140N120CH7XKSA1 - Rail/Tube (Alt: IKQ140N120CH7XKSA1)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	IKQ140N120CH7XKSA1	Tube		45 Weeks	240	1 - 10 - 100 - 1000 $6.66 10000 $6.33	Buy Now
Newark	IKQ140N120CH7XKSA1	Bulk	20		1	1 $16.57 10 $11.22 100 $10.05 1000 $9.37 10000 $9.37	Buy Now
TME	IKQ140N120CH7XKSA1				240	1 - 10 - 100 - 1000 $8.74 10000 $8.74	Get Quote

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140N1 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Advance Technical Information IXFH 140N10P VDSS ID25 PolarHVTM HiPerFET IXFT 140N10P Power MOSFETs = = = RDS on 100 V 140 A Ω 11 mΩ N-Channel Enhancement Mode Fast Intrinsic Diode; Avalanche Rated TO-247 (IXFT) Symbol Test Conditions Maximum Ratings VDSS	Original	140n10p o-247 065b1 728b1 +1123b1	PDF
Contextual Info: PolarHVTM HiPerFET IXFH 140N10P IXFT 140N10P Power MOSFETs VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 100	Original	140n10p	PDF
140N1 Contextual Info: PolarHVTM HiPerFET IXFH 140N10P IXFT 140N10P Power MOSFETs VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 100	Original	140n10p 140n1	PDF
140N10P Abstract: 140n10 Contextual Info: IXTQ 140N10P IXTT 140N10P PolarHTTM Power MOSFET VDSS ID25 RDS on = = ≤ 100 V 140 A Ω 11 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 100 100	Original	140n10p 140n10	PDF
Contextual Info: IXTQ 140N10P IXTT 140N10P PolarHTTM Power MOSFET VDSS ID25 RDS on = = ≤ 100 V 140 A Ω 11 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 100 100	Original	140n10p	PDF
140n10 Contextual Info: Advanced Technical Information IXTQ 140N10P IXTT 140N10P PolarHTTM Power MOSFET VDSS ID25 RDS on = = = 100 V 140 A Ω 11 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ	Original	140n10p o-268 065b1 728b1 +2123b1 140n10	PDF
kta 3-25 Abstract: Allen-Bradley 100-M09 KTL-3-65-N Allen-Bradley Overload relay 140-MN-1600 Allen-Bradley cat 140-mn-0400 Allen-Bradley Overload relay 140-MN-0250 Allen-Bradley cat 140-mn-1000 140M-K5F-D12 140M-K5F-D16 kry 112 76 1 Contextual Info: Circuit-Breakers Bulletin 140 / KTA 3 Bulletin 140 / KTA 3 • • • • Motor Protection Characteristics High Switching Capacity High Current Limiting For Compact Motor Starters Overview . 2-2	Original	140-mn 140-cmn 140m-k5f 3-160s +14140m-m5f 3-250s 140m-p5f 3-400s kta 3-25 allen-bradley 100-m09 ktl-3-65-n allen-bradley overload relay 140-mn-1600 allen-bradley cat 140-mn-0400 allen-bradley overload relay 140-mn-0250 allen-bradley cat 140-mn-1000 140m-k5f-d12 140m-k5f-d16 kry 112 76 1	PDF
IXTD08N100P-1A Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2 Contextual Info: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types	Original	ixtd08n100p-1a ixtq22n60p ixfh20n80p dws20-200a +6ixfh24n80p ixfk180n15p ixtq22n50p dwhp16-12 ixgh64n60a3 ixfb50n80q2	PDF
220FP Abstract: STH140N10F4-2 Contextual Info: 140N10F4-2, 140N10F4 140N10F4 N-channel 100 V, 6.5 mΩ, 120 A TO-220, H2PAK, TO-220FP STripFET DeepGATE™ Power MOSFET Preliminary data Features Type VDSS RDS on max ID 140N10F4-2 100 V < 8.1 mΩ 120 A 140N10F4 100 V < 8.5 mΩ 50 A 140N10F4	Original	sth140n10f4-2 stf140n10f4 stp140n10f4 o-220 +2o-220fp 220fp	PDF
STP140N10F4 Abstract: 745 diode STF140N10F4 STH140N10F4-2 sth140n10f4 140N1 140n10 Contextual Info: 140N10F4-2, 140N10F4 140N10F4 N-channel 100 V, 6.5 mΩ, 120 A TO-220, H2PAK, TO-220FP STripFET DeepGATE™ Power MOSFET Preliminary data Features Type VDSS RDS on max ID 140N10F4-2 100 V < 8.1 mΩ 120 A 140N10F4 100 V < 8.5 mΩ 50 A 140N10F4	Original	sth140n10f4-2 stf140n10f4 stp140n10f4 o-220 +5o-220fp 745 diode sth140n10f4 140n1 140n10	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	ms-013 10-pin 5m-1994 mo-229 +107n60b equivalent 18n50 equivalent ixgh 1499 mosfet smd 4407 ixdd 614 c 547 b w57 bjt transistor r1275ns20l r1271ns12c ixys cs 20-22 mof1 ixtp 220n04t2	PDF
STW20N60 Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p Contextual Info: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal	Original	o-220 isoplus220tm o-247 isoplus247tm +15o-264 isoplus264tm plus220 plus220smd o-252 stw20n60 2n60p ixfb100n50 ixfb100n50p stw20n60fd ixfb100n50p to-264 ixys ixfn100n50p ixfn48n60p ixfh30n60p ixfn100n50p	PDF
IDQ25186 Abstract: MA721 VSS1641NC IMX72 Li-49 39NC60 motorola bq50 Contextual Info: Order ttis document by 5VFPMB72D/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1Mx72 DRAM Dual-In-Line Memory Module DIMM 5 V, FPM, Buffered For Error Correction Code Applications 8 Megabyte . JEDEC–Standard ● Single 5 V Power Supply, ~L_Compatible ● Fast Page Mode (FPM)	Original	5vfpmb72d/d 1mx72 ma721 bj48tadg60 +8140n1-2 5vfpmb72d idq25186 vss1641nc imx72 li-49 39nc60 motorola bq50	PDF
DIODE 1334 Abstract: 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP 200N10P-88 Contextual Info: Chip-Shortform2004.pmd PolarHTTM MOSFET, very low RDS on Type VDSS max. RDSon max. Chip type Chip size dimensions 11 Source bond wire recommended Equivalent device data sheet 26.10.2004, 12:44 V mΩ mm mils IXTD 110N055P-5S 55 21 5S 6.20 x 5.20 244 x 205	Original	110n055p-5s 75n10p-5s 110n10p-6s 140n10p-7s +15170n10p-8s 200n10p-88 62n15p-5s 96n15p-6s 120n15p-7s 150n15p-8s diode 1334 1334 diode 96n20 36n30p equivalent 88n30 100n25p 36n30 ixtp75n10p ixtp ixtp ixtp ixtp	PDF

140N1 Search Results

140N1 Result Highlights (1)

140N1 Price and Stock

Littelfuse Inc IXFH140N10P

Infineon Technologies AG IKY140N120CH7XKSA1

onsemi FQA140N10

WeEn Semiconductor Co Ltd WG140N120HFP1Q

Infineon Technologies AG IKQ140N120CH7XKSA1

140N1 Datasheets Context Search

140N1

140N10P

140n10

kta 3-25

IXTD08N100P-1A

220FP

STP140N10F4

7N60B equivalent

STW20N60

IDQ25186

DIODE 1334