IXFN102N30P Search Results

IXFN102N30P Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXFN102N30P		IXYS	FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 300V 88A SOT227B	Original	PDF		2
IXFN102N30P		IXYS	PolarHT HiPerFET Power MOSFET	Original	PDF	106.38KB	5

IXFN102N30P Price and Stock

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IXYS Corporation IXFN102N30P MOSFET N-CH 300V 88A SOT227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFN102N30P	Tube	300		1	1 $28.91 10 $21.16 100 $18.03 1000 $18.03 10000 $18.03	Buy Now
Mouser Electronics	IXFN102N30P					1 - 10 - 100 - 1000 $18.04 10000 $18.04	Get Quote
Future Electronics	IXFN102N30P	Tube			300	1 - 10 $21.26 100 $20.99 1000 $20.62 10000 $20.62	Buy Now
TTI	IXFN102N30P	Tube			300	1 - 10 - 100 - 1000 $18.59 10000 $18.39	Buy Now
TME	IXFN102N30P				1	1 $29.01 10 $21.58 100 $21.40 1000 $21.40 10000 $21.40	Get Quote

IBS Electronics	IXFN102N30P				300	1 - 10 - 100 $29.39 1000 $29.76 10000 $29.76	Buy Now
Littelfuse Inc IXFN102N30P Discmsft N-Ch Hiperfet-Polasot-227B(Mini/ Tube \|Littelfuse IXFN102N30P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXFN102N30P	Bulk			300	1 - 10 - 100 - 1000 $18.90 10000 $18.90	Buy Now
RS	IXFN102N30P	Bulk		8 Weeks	10	1 - 10 $27.89 100 $25.66 1000 $25.66 10000 $25.66	Get Quote

IXFN102N30P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IXFN102N30P Contextual Info: PolarHVTM HiPerFET IXFN 102N30P Power MOSFET VDSS ID25 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr RDS on Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 300 300 V V VGS VGSM	Original	102N30P IXFN102N30P	PDF
Contextual Info: PolarHVTM HiPerFET IXFN 102N30P Power MOSFET VDSS ID25 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr RDS on Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 300 300 V V VGS VGSM	Original	102N30P	PDF
STW20N60 Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p Contextual Info: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal	Original	O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p	PDF
123B16 Abstract: 88 881 505 102N30P IXFN102N30P C8860 Contextual Info: Preliminary Technical Information PolarHVTM HiPerFET IXFN 102N30P Power MOSFET VDSS ID25 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr RDS on Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ	Original	102N30P 405B2 123B16 88 881 505 102N30P IXFN102N30P C8860	PDF