102N30P Search Results

102N30P Price and Stock

Filter by Manufacturer

Select Manufacturer


IXYS Corporation IXFK102N30P Transistor: N-MOSFET; unipolar; 300V; 102A; 700W; TO264
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IXFK102N30P		5		1	1 $16.44 10 $14.05 100 $10.84 1000 $10.84 10000 $10.84	Buy Now
Mouser Electronics	IXFK102N30P					1 - 10 - 100 - 1000 $12.44 10000 $12.44	Get Quote
TTI	IXFK102N30P	Tube			300	1 - 10 - 100 - 1000 $11.70 10000 $11.70	Buy Now
IXYS Corporation IXFR102N30P Transistor: N-MOSFET; unipolar; 300V; 60A; 250W; ISOPLUS247™
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IXFR102N30P		4		1	1 $17.43 10 $14.08 100 $12.96 1000 $12.96 10000 $12.96	Buy Now
Mouser Electronics	IXFR102N30P					1 - 10 - 100 - 1000 $16.77 10000 $16.77	Get Quote
TTI	IXFR102N30P	Tube			300	1 - 10 - 100 - 1000 $16.33 10000 $16.33	Buy Now
IXYS Corporation IXTK102N30P Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 102A; 700W; TO264
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IXTK102N30P				1	1 $17.78 10 $17.78 100 $11.14 1000 $10.40 10000 $10.40	Get Quote
Mouser Electronics	IXTK102N30P					1 $20.91 10 $15.62 100 $12.01 1000 $11.96 10000 $11.96	Get Quote
TTI	IXTK102N30P	Tube			300	1 - 10 - 100 - 1000 $11.40 10000 $11.40	Buy Now
IXYS Corporation IXFN102N30P Module; single transistor; 300V; 86A; SOT227B; screw; Idm: 250A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IXFN102N30P				1	1 $26.93 10 $21.62 100 $21.62 1000 $21.62 10000 $21.62	Get Quote
Mouser Electronics	IXFN102N30P					1 - 10 - 100 - 1000 $22.75 10000 $22.75	Get Quote
TTI	IXFN102N30P	Tube			300	1 - 10 - 100 - 1000 $23.10 10000 $23.10	Buy Now
Littelfuse Inc IXTK102N30P Disc Mosfet N-Ch Std-Polar To-264/ Tube; \|Littelfuse IXTK102N30P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXTK102N30P	Bulk			300	1 - 10 - 100 - 1000 $10.04 10000 $9.42	Buy Now
RS	IXTK102N30P	Bulk		8 Weeks	25	1 - 10 - 100 $17.34 1000 $17.34 10000 $17.34	Get Quote

Find more 102N30P price and stock on Findchips.com

102N30P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
ISOPLUS247 Contextual Info: Advanced Technical Information PolarHTTM HiPerFET IXFR 102N30P Power MOSFET VDSS ID25 RDS on trr = = = ≤ 300 V 60 A Ω 36 mΩ 200 ns N-Channel Enhancement Mode Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	102n30p isoplus247	PDF
Contextual Info: Preliminary Technical Information PolarHTTM HiPerFET IXFK 102N30P Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions VDSS TJ = 25° C to 150° C 300 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ	Original	102n30p 405b2	PDF
102N30P Abstract: 102N30 IXTK102N30P Contextual Info: PolarHTTM Power MOSFET IXTK 102N30P VDSS = 300 V ID25 = 102 A Ω RDS on ≤ 33 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 300 300 V V VGSS VGSM	Original	102n30p 102n30 ixtk102n30p	PDF
Contextual Info: PolarHTTM Power MOSFET VDSS = 300 V ID25 = 102 A Ω RDS on ≤ 33 mΩ IXTK 102N30P N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 300 300 V V VGSS VGSM	Original	102n30p o-264	PDF
IXFN102N30P Contextual Info: PolarHVTM HiPerFET IXFN 102N30P Power MOSFET VDSS ID25 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr RDS on Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 300 300 V V VGS VGSM	Original	102n30p ixfn102n30p	PDF
102N30P Abstract: IXTK102N30P Contextual Info: Advanced Technical Information PolarHTTM Power MOSFET IXTK 102N30P VDSS ID25 RDS on = 300 V = 102 A Ω = 33 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGSM ID25	Original	102n30p o-264 ixtk102n30p	PDF
Contextual Info: PolarHVTM HiPerFET IXFN 102N30P Power MOSFET VDSS ID25 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr RDS on Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 300 300 V V VGS VGSM	Original	102n30p	PDF
102N30P Contextual Info: Advanced Technical Information PolarHTTM HiPerFET IXFK 102N30P IXFN 102N30P Power MOSFET VDSS ID25 RDS on trr = = = ≤ 300 V 102 A Ω 33 mΩ 200 ns N-Channel Enhancement Mode Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	102n30p	PDF
123B16 Abstract: 88 881 505 102N30P IXFN102N30P C8860 Contextual Info: Preliminary Technical Information PolarHVTM HiPerFET IXFN 102N30P Power MOSFET VDSS ID25 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr RDS on Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ	Original	102n30p 405b2 123b16 88 881 505 +2ixfn102n30p c8860	PDF
NS224 Contextual Info: Preliminary Technical Information PolarHTTM HiPerFET IXFK 102N30P Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions VDSS TJ = 25° C to 150° C 300 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ	Original	102n30p 405b2 ns224	PDF
ISOPLUS247 Contextual Info: PolarHTTM HiPerFET IXFR 102N30P Power MOSFET VDSS = 300 V ID25 = 60 A RDS on ≤ 36 m Ω ≤ 200 ns trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C	Original	102n30p isoplus247	PDF
Contextual Info: PolarHTTM HiPerFET IXFR 102N30P Power MOSFET VDSS = 300 V ID25 = 60 A RDS on ≤ 36 m Ω ≤ 200 ns trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C	Original	102n30p	PDF
IXTD08N100P-1A Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2 Contextual Info: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types	Original	ixtd08n100p-1a ixtq22n60p ixfh20n80p dws20-200a +6ixfh24n80p ixfk180n15p ixtq22n50p dwhp16-12 ixgh64n60a3 ixfb50n80q2	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	ms-013 10-pin 5m-1994 mo-229 +107n60b equivalent 18n50 equivalent ixgh 1499 mosfet smd 4407 ixdd 614 c 547 b w57 bjt transistor r1275ns20l r1271ns12c ixys cs 20-22 mof1 ixtp 220n04t2	PDF

102N30P Search Results

102N30P Price and Stock

IXYS Corporation IXFK102N30P

IXYS Corporation IXFR102N30P

IXYS Corporation IXTK102N30P

IXYS Corporation IXFN102N30P

Littelfuse Inc IXTK102N30P

102N30P Datasheets Context Search

ISOPLUS247

102N30P

IXFN102N30P

102N30P

102N30P

123B16

NS224

ISOPLUS247

IXTD08N100P-1A

7N60B equivalent