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IXYS Corporation IXFN102N30P MOSFET N-CH 300V 88A SOT227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFN102N30P	Tube	300		1	1 $28.91 10 $21.16 100 $18.03 1000 $18.03 10000 $18.03	Buy Now
Mouser Electronics	IXFN102N30P					1 - 10 - 100 - 1000 $18.04 10000 $18.04	Get Quote
TTI	IXFN102N30P	Tube			300	1 - 10 - 100 - 1000 $18.59 10000 $18.39	Buy Now
TME	IXFN102N30P				1	1 $28.98 10 $21.55 100 $21.37 1000 $21.37 10000 $21.37	Get Quote
IBS Electronics	IXFN102N30P				300	1 - 10 - 100 $29.39 1000 $29.76 10000 $29.76	Buy Now
IXYS Corporation IXFK102N30P MOSFET N-CH 300V 102A TO264AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFK102N30P	Tube			1	1 $17.22 10 $17.22 100 $9.41 1000 $9.32 10000 $9.32	Buy Now
Mouser Electronics	IXFK102N30P					1 $17.33 10 $12.59 100 $10.18 1000 $10.18 10000 $10.18	Get Quote
TTI	IXFK102N30P	Tube			300	1 - 10 - 100 - 1000 $9.32 10000 $9.32	Buy Now
TME	IXFK102N30P		5		1	1 $17.14 10 $14.65 100 $11.29 1000 $11.29 10000 $11.29	Buy Now
Vyrian	IXFK102N30P		9			1 - 10 - 100 - 1000 - 10000 -	Get Quote
IXYS Corporation IXFR102N30P MOSFET N-CH 300V 60A ISOPLUS247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFR102N30P	Tube			300	1 - 10 - 100 - 1000 $11.83 10000 $11.83	Buy Now
Mouser Electronics	IXFR102N30P					1 - 10 - 100 - 1000 $12.83 10000 $12.83	Get Quote
TTI	IXFR102N30P	Tube			300	1 - 10 - 100 - 1000 $11.83 10000 $11.83	Buy Now
TME	IXFR102N30P		10		1	1 $18.16 10 $14.67 100 $13.50 1000 $13.50 10000 $13.50	Buy Now
IXYS Corporation IXTK102N30P MOSFET N-CH 300V 102A TO264
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTK102N30P	Tube			1	1 $16.87 10 $16.87 100 $9.19 1000 $9.08 10000 $9.08	Buy Now
Mouser Electronics	IXTK102N30P					1 $16.89 10 $11.17 100 $9.98 1000 $9.84 10000 $9.84	Get Quote
TTI	IXTK102N30P	Tube			300	1 - 10 - 100 - 1000 $9.08 10000 $9.08	Buy Now
TME	IXTK102N30P				1	1 $13.62 10 $11.44 100 $11.04 1000 $11.04 10000 $11.04	Get Quote
Chip Stock	IXTK102N30P		782			1 - 10 - 100 - 1000 - 10000 -	Get Quote

IBS Electronics	IXTK102N30P		200		25	1 - 10 - 100 $15.16 1000 $14.97 10000 $14.97	Buy Now
Nisshinbo Micro Devices RP102N301B-TR-FE IC REG LINEAR 3V 300MA SOT23-5
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RP102N301B-TR-FE	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.41	Buy Now
Avnet Americas	RP102N301B-TR-FE	Reel		12 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.40	Buy Now
Mouser Electronics	RP102N301B-TR-FE					1 - 10 - 100 - 1000 - 10000 $0.40	Get Quote

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102N30 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
ISOPLUS247 Contextual Info: Advanced Technical Information PolarHTTM HiPerFET IXFR 102N30P Power MOSFET VDSS ID25 RDS on trr = = = ≤ 300 V 60 A Ω 36 mΩ 200 ns N-Channel Enhancement Mode Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	102N30P ISOPLUS247	PDF
Contextual Info: Preliminary Technical Information PolarHTTM HiPerFET IXFK 102N30P Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions VDSS TJ = 25° C to 150° C 300 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ	Original	102N30P 405B2	PDF
102N30P Abstract: 102N30 IXTK102N30P Contextual Info: PolarHTTM Power MOSFET IXTK 102N30P VDSS = 300 V ID25 = 102 A Ω RDS on ≤ 33 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 300 300 V V VGSS VGSM	Original	102N30P 102N30P 102N30 IXTK102N30P	PDF
Contextual Info: PolarHTTM Power MOSFET VDSS = 300 V ID25 = 102 A Ω RDS on ≤ 33 mΩ IXTK 102N30P N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 300 300 V V VGSS VGSM	Original	102N30P O-264	PDF
IXFN102N30P Contextual Info: PolarHVTM HiPerFET IXFN 102N30P Power MOSFET VDSS ID25 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr RDS on Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 300 300 V V VGS VGSM	Original	102N30P IXFN102N30P	PDF
102N30P Abstract: IXTK102N30P Contextual Info: Advanced Technical Information PolarHTTM Power MOSFET IXTK 102N30P VDSS ID25 RDS on = 300 V = 102 A Ω = 33 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGSM ID25	Original	102N30P O-264 102N30P IXTK102N30P	PDF
Contextual Info: PolarHVTM HiPerFET IXFN 102N30P Power MOSFET VDSS ID25 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr RDS on Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 300 300 V V VGS VGSM	Original	102N30P	PDF
102N30P Contextual Info: Advanced Technical Information PolarHTTM HiPerFET IXFK 102N30P IXFN 102N30P Power MOSFET VDSS ID25 RDS on trr = = = ≤ 300 V 102 A Ω 33 mΩ 200 ns N-Channel Enhancement Mode Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	102N30P 102N30P	PDF
123B16 Abstract: 88 881 505 102N30P IXFN102N30P C8860 Contextual Info: Preliminary Technical Information PolarHVTM HiPerFET IXFN 102N30P Power MOSFET VDSS ID25 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr RDS on Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ	Original	102N30P 405B2 123B16 88 881 505 102N30P IXFN102N30P C8860	PDF
NS224 Contextual Info: Preliminary Technical Information PolarHTTM HiPerFET IXFK 102N30P Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions VDSS TJ = 25° C to 150° C 300 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ	Original	102N30P 405B2 NS224	PDF
ISOPLUS247 Contextual Info: PolarHTTM HiPerFET IXFR 102N30P Power MOSFET VDSS = 300 V ID25 = 60 A RDS on ≤ 36 m Ω ≤ 200 ns trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C	Original	102N30P ISOPLUS247	PDF
Contextual Info: PolarHTTM HiPerFET IXFR 102N30P Power MOSFET VDSS = 300 V ID25 = 60 A RDS on ≤ 36 m Ω ≤ 200 ns trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C	Original	102N30P	PDF
IXTD08N100P-1A Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2 Contextual Info: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types	Original		PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2	PDF

102N30 Search Results

102N30 Price and Stock

IXYS Corporation IXFN102N30P

IXYS Corporation IXFK102N30P

IXYS Corporation IXFR102N30P

IXYS Corporation IXTK102N30P

Nisshinbo Micro Devices RP102N301B-TR-FE

102N30 Datasheets Context Search

ISOPLUS247

102N30P

IXFN102N30P

102N30P

102N30P

123B16

NS224

ISOPLUS247

IXTD08N100P-1A

7N60B equivalent