102N30 Search Results

102N30 Price and Stock

Filter by Manufacturer

Select Manufacturer


ABLIC Inc. S-19102N30H-M5T1U - Tape and Reel (Alt: S-19102N30H-M5T1U)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	S-19102N30H-M5T1U	Tape & Reel		24 Weeks	3,000	1 $0.74 10 $0.74 100 $0.74 1000 $0.74 10000 $0.74	Buy Now
Mouser Electronics	S-19102N30H-M5T1U					1 - 10 - 100 - 1000 - 10000 $0.72	Get Quote
Nisshinbo Micro Devices RP102N301B-TR-FE LOW NOISE, 300MA LDO REGULATOR - Tape and Reel (Alt: RP102N301B-TR-FE)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	RP102N301B-TR-FE	Tape & Reel		12 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.40	Buy Now
Mouser Electronics	RP102N301B-TR-FE					1 - 10 - 100 - 1000 - 10000 $0.43	Get Quote
Newark	RP102N301B-TR-FE	Tape & Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.45	Buy Now
Nisshinbo Micro Devices RP102N301D-TR-FE LOW NOISE, 300MA LDO REGULATOR - Tape and Reel (Alt: RP102N301D-TR-FE)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	RP102N301D-TR-FE	Tape & Reel		12 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.40	Buy Now
Mouser Electronics	RP102N301D-TR-FE					1 - 10 - 100 - 1000 - 10000 $0.43	Get Quote
Newark	RP102N301D-TR-FE	Tape & Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.45	Buy Now
Central Semiconductor Corp 2N3019 PBFREE Bipolar Transistors - BJT NPN Gen Pur SS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	2N3019 PBFREE		20,417			1 $3.50 10 $1.83 100 $1.48 1000 $1.24 10000 $1.07	Buy Now
Central Semiconductor Corp 2N3053 PBFREE Bipolar Transistors - BJT NPN Gen Pur SS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	2N3053 PBFREE		2,248			1 $7.36 10 $4.92 100 $3.96 1000 $2.82 10000 $2.82	Buy Now

Find more 102N30 price and stock on Findchips.com

102N30 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
ISOPLUS247 Contextual Info: Advanced Technical Information PolarHTTM HiPerFET IXFR 102N30P Power MOSFET VDSS ID25 RDS on trr = = = ≤ 300 V 60 A Ω 36 mΩ 200 ns N-Channel Enhancement Mode Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	102n30p isoplus247	PDF
Contextual Info: Preliminary Technical Information PolarHTTM HiPerFET IXFK 102N30P Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions VDSS TJ = 25° C to 150° C 300 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ	Original	102n30p 405b2	PDF
102N30P Abstract: 102N30 IXTK102N30P Contextual Info: PolarHTTM Power MOSFET IXTK 102N30P VDSS = 300 V ID25 = 102 A Ω RDS on ≤ 33 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 300 300 V V VGSS VGSM	Original	102n30p 102n30 ixtk102n30p	PDF
Contextual Info: PolarHTTM Power MOSFET VDSS = 300 V ID25 = 102 A Ω RDS on ≤ 33 mΩ IXTK 102N30P N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 300 300 V V VGSS VGSM	Original	102n30p o-264	PDF
IXFN102N30P Contextual Info: PolarHVTM HiPerFET IXFN 102N30P Power MOSFET VDSS ID25 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr RDS on Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 300 300 V V VGS VGSM	Original	102n30p ixfn102n30p	PDF
102N30P Abstract: IXTK102N30P Contextual Info: Advanced Technical Information PolarHTTM Power MOSFET IXTK 102N30P VDSS ID25 RDS on = 300 V = 102 A Ω = 33 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGSM ID25	Original	102n30p o-264 ixtk102n30p	PDF
Contextual Info: PolarHVTM HiPerFET IXFN 102N30P Power MOSFET VDSS ID25 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr RDS on Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 300 300 V V VGS VGSM	Original	102n30p	PDF
102N30P Contextual Info: Advanced Technical Information PolarHTTM HiPerFET IXFK 102N30P IXFN 102N30P Power MOSFET VDSS ID25 RDS on trr = = = ≤ 300 V 102 A Ω 33 mΩ 200 ns N-Channel Enhancement Mode Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	102n30p	PDF
123B16 Abstract: 88 881 505 102N30P IXFN102N30P C8860 Contextual Info: Preliminary Technical Information PolarHVTM HiPerFET IXFN 102N30P Power MOSFET VDSS ID25 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr RDS on Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ	Original	102n30p 405b2 123b16 88 881 505 +2ixfn102n30p c8860	PDF
NS224 Contextual Info: Preliminary Technical Information PolarHTTM HiPerFET IXFK 102N30P Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions VDSS TJ = 25° C to 150° C 300 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ	Original	102n30p 405b2 ns224	PDF
ISOPLUS247 Contextual Info: PolarHTTM HiPerFET IXFR 102N30P Power MOSFET VDSS = 300 V ID25 = 60 A RDS on ≤ 36 m Ω ≤ 200 ns trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C	Original	102n30p isoplus247	PDF
Contextual Info: PolarHTTM HiPerFET IXFR 102N30P Power MOSFET VDSS = 300 V ID25 = 60 A RDS on ≤ 36 m Ω ≤ 200 ns trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C	Original	102n30p	PDF
IXTD08N100P-1A Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2 Contextual Info: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types	Original	ixtd08n100p-1a ixtq22n60p ixfh20n80p dws20-200a +6ixfh24n80p ixfk180n15p ixtq22n50p dwhp16-12 ixgh64n60a3 ixfb50n80q2	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	ms-013 10-pin 5m-1994 mo-229 +107n60b equivalent 18n50 equivalent ixgh 1499 mosfet smd 4407 ixdd 614 c 547 b w57 bjt transistor r1275ns20l r1271ns12c ixys cs 20-22 mof1 ixtp 220n04t2	PDF

102N30 Search Results

102N30 Price and Stock

ABLIC Inc. S-19102N30H-M5T1U

Nisshinbo Micro Devices RP102N301B-TR-FE

Nisshinbo Micro Devices RP102N301D-TR-FE

Central Semiconductor Corp 2N3019 PBFREE

Central Semiconductor Corp 2N3053 PBFREE

102N30 Datasheets Context Search

ISOPLUS247

102N30P

IXFN102N30P

102N30P

102N30P

123B16

NS224

ISOPLUS247

IXTD08N100P-1A

7N60B equivalent